DE3851147T2 - Heteroübergang-bipolartransistor. - Google Patents
Heteroübergang-bipolartransistor.Info
- Publication number
- DE3851147T2 DE3851147T2 DE3851147T DE3851147T DE3851147T2 DE 3851147 T2 DE3851147 T2 DE 3851147T2 DE 3851147 T DE3851147 T DE 3851147T DE 3851147 T DE3851147 T DE 3851147T DE 3851147 T2 DE3851147 T2 DE 3851147T2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- pct
- bipolar transistor
- germanium
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000007704 transition Effects 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB878708926A GB8708926D0 (en) | 1987-04-14 | 1987-04-14 | Bipolar transistor |
PCT/GB1988/000289 WO1988008206A1 (en) | 1987-04-14 | 1988-04-14 | Heterojunction bipolar transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3851147D1 DE3851147D1 (de) | 1994-09-22 |
DE3851147T2 true DE3851147T2 (de) | 1995-02-23 |
Family
ID=10615807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3851147T Expired - Lifetime DE3851147T2 (de) | 1987-04-14 | 1988-04-14 | Heteroübergang-bipolartransistor. |
Country Status (8)
Country | Link |
---|---|
US (1) | US5006912A (de) |
EP (1) | EP0360804B1 (de) |
JP (1) | JP2644022B2 (de) |
AT (1) | ATE110190T1 (de) |
DE (1) | DE3851147T2 (de) |
GB (1) | GB8708926D0 (de) |
HK (1) | HK137296A (de) |
WO (1) | WO1988008206A1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5296391A (en) * | 1982-03-24 | 1994-03-22 | Nec Corporation | Method of manufacturing a bipolar transistor having thin base region |
US5198689A (en) * | 1988-11-30 | 1993-03-30 | Fujitsu Limited | Heterojunction bipolar transistor |
JPH02150033A (ja) * | 1988-11-30 | 1990-06-08 | Fujitsu Ltd | 半導体装置およびその製造方法 |
US5159424A (en) * | 1988-12-10 | 1992-10-27 | Canon Kabushiki Kaisha | Semiconductor device having a high current gain and a higher ge amount at the base region than at the emitter and collector region, and photoelectric conversion apparatus using the device |
US5241197A (en) * | 1989-01-25 | 1993-08-31 | Hitachi, Ltd. | Transistor provided with strained germanium layer |
EP0380077A3 (de) * | 1989-01-25 | 1990-09-12 | Hitachi, Ltd. | Transistor, versehen mit einer gedehnten Schicht aus Germanium |
DE3930536A1 (de) * | 1989-09-13 | 1991-03-21 | Licentia Gmbh | Verfahren zur herstellung eines silizium-bipolartransistors |
US5102810A (en) * | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
DE59010471D1 (de) * | 1990-06-07 | 1996-10-02 | Siemens Ag | Verfahren zur Herstellung von Bipolartransistoren mit extrem reduzierter Basis-Kollektor-Kapazität |
US5105250A (en) * | 1990-10-09 | 1992-04-14 | Motorola, Inc. | Heterojunction bipolar transistor with a thin silicon emitter |
EP0483487B1 (de) * | 1990-10-31 | 1995-03-01 | International Business Machines Corporation | Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren |
US5218213A (en) * | 1991-02-22 | 1993-06-08 | Harris Corporation | SOI wafer with sige |
US5240876A (en) * | 1991-02-22 | 1993-08-31 | Harris Corporation | Method of fabricating SOI wafer with SiGe as an etchback film in a BESOI process |
JP2855908B2 (ja) * | 1991-09-05 | 1999-02-10 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP3132101B2 (ja) * | 1991-11-20 | 2001-02-05 | 日本電気株式会社 | 半導体装置の製造方法 |
US5266813A (en) * | 1992-01-24 | 1993-11-30 | International Business Machines Corporation | Isolation technique for silicon germanium devices |
JP2971246B2 (ja) * | 1992-04-15 | 1999-11-02 | 株式会社東芝 | ヘテロバイポーラトランジスタの製造方法 |
JP2582519B2 (ja) * | 1992-07-13 | 1997-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | バイポーラ・トランジスタおよびその製造方法 |
US5304816A (en) * | 1992-11-25 | 1994-04-19 | At&T Bell Laboratories | Article comprising a "ballistic" heterojunction bipolar transistor |
US5523243A (en) * | 1992-12-21 | 1996-06-04 | International Business Machines Corporation | Method of fabricating a triple heterojunction bipolar transistor |
US5389803A (en) * | 1993-03-29 | 1995-02-14 | International Business Machines Corporation | High-gain Si/SiGe MIS heterojunction bipolar transistors |
US5685946A (en) * | 1993-08-11 | 1997-11-11 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices |
US5422502A (en) * | 1993-12-09 | 1995-06-06 | Northern Telecom Limited | Lateral bipolar transistor |
US5534713A (en) * | 1994-05-20 | 1996-07-09 | International Business Machines Corporation | Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers |
US5583059A (en) * | 1994-06-01 | 1996-12-10 | International Business Machines Corporation | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
US5461245A (en) * | 1994-08-24 | 1995-10-24 | At&T Corp. | Article comprising a bipolar transistor with floating base |
DE19824110A1 (de) * | 1998-05-29 | 1999-12-09 | Daimler Chrysler Ag | Resonanz Phasen Transistor mit Laufzeitverzögerung |
US6211562B1 (en) | 1999-02-24 | 2001-04-03 | Micron Technology, Inc. | Homojunction semiconductor devices with low barrier tunnel oxide contacts |
SE516338C2 (sv) * | 1999-05-31 | 2001-12-17 | Ericsson Telefon Ab L M | RF-effekttransistor med kollektor upp |
DE19940278A1 (de) * | 1999-08-26 | 2001-03-08 | Inst Halbleiterphysik Gmbh | Schichtstruktur für bipolare Transistoren und Verfahren zu deren Herstellung |
US6573539B2 (en) * | 2000-01-10 | 2003-06-03 | International Business Machines Corporation | Heterojunction bipolar transistor with silicon-germanium base |
US6437376B1 (en) * | 2000-03-01 | 2002-08-20 | Applied Micro Circuits Corporation | Heterojunction bipolar transistor (HBT) with three-dimensional base contact |
US6365479B1 (en) * | 2000-09-22 | 2002-04-02 | Conexant Systems, Inc. | Method for independent control of polycrystalline silicon-germanium in a silicon-germanium HBT and related structure |
US6552406B1 (en) * | 2000-10-03 | 2003-04-22 | International Business Machines Corporation | SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks |
US6767842B2 (en) * | 2002-07-09 | 2004-07-27 | Lsi Logic Corporation | Implementation of Si-Ge HBT with CMOS process |
US7439558B2 (en) * | 2005-11-04 | 2008-10-21 | Atmel Corporation | Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement |
US7651919B2 (en) * | 2005-11-04 | 2010-01-26 | Atmel Corporation | Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization |
US7300849B2 (en) * | 2005-11-04 | 2007-11-27 | Atmel Corporation | Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement |
US20070102729A1 (en) * | 2005-11-04 | 2007-05-10 | Enicks Darwin G | Method and system for providing a heterojunction bipolar transistor having SiGe extensions |
US7528065B2 (en) * | 2006-01-17 | 2009-05-05 | International Business Machines Corporation | Structure and method for MOSFET gate electrode landing pad |
JP2007250903A (ja) | 2006-03-16 | 2007-09-27 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
EP1837917A1 (de) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nichtflüchtige Halbleiterspeichervorrichtung |
US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
WO2008017457A1 (en) * | 2006-08-11 | 2008-02-14 | Paul Scherrer Institut | Light modulators comprising si-ge quantum well layers |
US20080179636A1 (en) * | 2007-01-27 | 2008-07-31 | International Business Machines Corporation | N-fets with tensilely strained semiconductor channels, and method for fabricating same using buried pseudomorphic layers |
US9653639B2 (en) * | 2012-02-07 | 2017-05-16 | Apic Corporation | Laser using locally strained germanium on silicon for opto-electronic applications |
CN108258032B (zh) * | 2018-01-19 | 2021-04-20 | 重庆邮电大学 | 一种采用组合发射区的异质结双极晶体管及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3275906A (en) * | 1962-08-20 | 1966-09-27 | Nippon Electric Co | Multiple hetero-layer composite semiconductor device |
DE2719464A1 (de) * | 1977-04-30 | 1978-12-21 | Erich Dr Kasper | Verfahren zur herstellung von bipolaren hochfrequenztransistoren |
US4529455A (en) * | 1983-10-28 | 1985-07-16 | At&T Bell Laboratories | Method for epitaxially growing Gex Si1-x layers on Si utilizing molecular beam epitaxy |
JPS63118485A (ja) * | 1986-11-05 | 1988-05-23 | ナショナル住宅産業株式会社 | 壁 |
-
1987
- 1987-04-14 GB GB878708926A patent/GB8708926D0/en active Pending
-
1988
- 1988-04-14 DE DE3851147T patent/DE3851147T2/de not_active Expired - Lifetime
- 1988-04-14 WO PCT/GB1988/000289 patent/WO1988008206A1/en active IP Right Grant
- 1988-04-14 US US07/368,362 patent/US5006912A/en not_active Expired - Lifetime
- 1988-04-14 AT AT88903305T patent/ATE110190T1/de not_active IP Right Cessation
- 1988-04-14 JP JP63503072A patent/JP2644022B2/ja not_active Expired - Lifetime
- 1988-04-14 EP EP88903305A patent/EP0360804B1/de not_active Expired - Lifetime
-
1996
- 1996-07-25 HK HK137296A patent/HK137296A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5006912A (en) | 1991-04-09 |
WO1988008206A1 (en) | 1988-10-20 |
JP2644022B2 (ja) | 1997-08-25 |
HK137296A (en) | 1996-08-02 |
EP0360804B1 (de) | 1994-08-17 |
GB8708926D0 (en) | 1987-05-20 |
JPH02504205A (ja) | 1990-11-29 |
EP0360804A1 (de) | 1990-04-04 |
ATE110190T1 (de) | 1994-09-15 |
DE3851147D1 (de) | 1994-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |