DE3823249C2 - - Google Patents

Info

Publication number
DE3823249C2
DE3823249C2 DE3823249A DE3823249A DE3823249C2 DE 3823249 C2 DE3823249 C2 DE 3823249C2 DE 3823249 A DE3823249 A DE 3823249A DE 3823249 A DE3823249 A DE 3823249A DE 3823249 C2 DE3823249 C2 DE 3823249C2
Authority
DE
Germany
Prior art keywords
silicon
semiconductor
germanium
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3823249A
Other languages
German (de)
English (en)
Other versions
DE3823249A1 (de
Inventor
Seijiro Kawasaki Kanagawa Jp Furukawa
Hiroyuki Etoh
Akitoshi Ishizaka
Toshikazu Kokubunji Tokio/Tokyo Jp Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3823249A1 publication Critical patent/DE3823249A1/de
Application granted granted Critical
Publication of DE3823249C2 publication Critical patent/DE3823249C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1215—The active layers comprising only Group IV materials comprising at least two Group IV elements, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1226—Active materials comprising only Group IV materials comprising multiple Group IV elements, e.g. SiC
    • H10P14/22—
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3408—
    • H10P14/3411—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)
DE3823249A 1987-07-10 1988-07-08 Halbleitereinrichtung Granted DE3823249A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170947A JP2569058B2 (ja) 1987-07-10 1987-07-10 半導体装置

Publications (2)

Publication Number Publication Date
DE3823249A1 DE3823249A1 (de) 1989-01-19
DE3823249C2 true DE3823249C2 (Direct) 1992-01-09

Family

ID=15914325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3823249A Granted DE3823249A1 (de) 1987-07-10 1988-07-08 Halbleitereinrichtung

Country Status (3)

Country Link
US (1) US4885614A (Direct)
JP (1) JP2569058B2 (Direct)
DE (1) DE3823249A1 (Direct)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19749962A1 (de) * 1997-11-04 1999-05-06 Inst Halbleiterphysik Gmbh Verfahren zur quantitativen Bestimmung der Misfitversetzungsdichte in Silizium-Germanium-Heterobipolartransistor- Schichtstapeln und Ätzlösung dafür
DE10005405A1 (de) * 2000-02-04 2001-08-09 Inst Halbleiterphysik Gmbh Schichtstapel für pnp-Heterobipolar-Transistor

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US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor
US5264710A (en) * 1989-03-21 1993-11-23 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals
JP2860138B2 (ja) * 1989-03-29 1999-02-24 キヤノン株式会社 半導体装置およびこれを用いた光電変換装置
JP2607301B2 (ja) * 1990-05-29 1997-05-07 三菱電機株式会社 半導体集積回路
JPH05144834A (ja) * 1991-03-20 1993-06-11 Hitachi Ltd バイポーラトランジスタ及びその製造方法
US5241214A (en) * 1991-04-29 1993-08-31 Massachusetts Institute Of Technology Oxides and nitrides of metastabale group iv alloys and nitrides of group iv elements and semiconductor devices formed thereof
US5298441A (en) * 1991-06-03 1994-03-29 Motorola, Inc. Method of making high transconductance heterostructure field effect transistor
JPH0529332A (ja) * 1991-07-22 1993-02-05 Rohm Co Ltd ヘテロ接合バイポーラトランジスタとその製造方法
DE69331522T2 (de) * 1992-06-29 2002-08-29 United Solar Systems Corp., Troy Mikrowellengespeistes abscheideverfahren mit regelung der substrattemperatur.
US5360986A (en) * 1993-10-05 1994-11-01 Motorola, Inc. Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method
US5583059A (en) * 1994-06-01 1996-12-10 International Business Machines Corporation Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
US5985703A (en) * 1994-10-24 1999-11-16 Banerjee; Sanjay Method of making thin film transistors
EP0799495A4 (en) * 1994-11-10 1999-11-03 Lawrence Semiconductor Researc Silicon-germanium-carbon compositions and processes thereof
US6403975B1 (en) 1996-04-09 2002-06-11 Max-Planck Gesellschaft Zur Forderung Der Wissenschafteneev Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
EP0812023A1 (en) * 1996-04-09 1997-12-10 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates
US6399970B2 (en) * 1996-09-17 2002-06-04 Matsushita Electric Industrial Co., Ltd. FET having a Si/SiGeC heterojunction channel
KR100495543B1 (ko) * 1996-09-17 2005-09-08 마츠시타 덴끼 산교 가부시키가이샤 반도체장치및그제조방법
US6750484B2 (en) 1996-12-09 2004-06-15 Nokia Corporation Silicon germanium hetero bipolar transistor
DE19652423A1 (de) * 1996-12-09 1998-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor und Verfahren zur Herstellung der epitaktischen Einzelschichten eines derartigen Transistors
DE19755979A1 (de) 1996-12-09 1999-06-10 Inst Halbleiterphysik Gmbh Silizium-Germanium-Heterobipolartransistor
JP3443343B2 (ja) * 1997-12-03 2003-09-02 松下電器産業株式会社 半導体装置
DE60042045D1 (de) 1999-06-22 2009-06-04 Panasonic Corp Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren
US7041170B2 (en) * 1999-09-20 2006-05-09 Amberwave Systems Corporation Method of producing high quality relaxed silicon germanium layers
CN1180483C (zh) 2000-03-27 2004-12-15 松下电器产业株式会社 SiGeC半导体晶体及其制造方法
US6461925B1 (en) * 2000-03-30 2002-10-08 Motorola, Inc. Method of manufacturing a heterojunction BiCMOS integrated circuit
US6509586B2 (en) * 2000-03-31 2003-01-21 Fujitsu Limited Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit
JP4882141B2 (ja) * 2000-08-16 2012-02-22 富士通株式会社 ヘテロバイポーラトランジスタ
US6387768B1 (en) * 2000-08-29 2002-05-14 Semiconductor Components Industries Llc Method of manufacturing a semiconductor component and semiconductor component thereof
US20020163013A1 (en) * 2000-09-11 2002-11-07 Kenji Toyoda Heterojunction bipolar transistor
US6784467B1 (en) * 2002-08-13 2004-08-31 Newport Fab, Llc Method for fabricating a self-aligned bipolar transistor and related structure
US6426265B1 (en) * 2001-01-30 2002-07-30 International Business Machines Corporation Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology
JP2002270817A (ja) * 2001-03-13 2002-09-20 Nec Corp バイポーラトランジスタ
US6780735B2 (en) * 2001-04-30 2004-08-24 International Business Machines Corporation Method to increase carbon and boron doping concentrations in Si and SiGe films
JP3461819B2 (ja) * 2001-06-14 2003-10-27 松下電器産業株式会社 半導体結晶膜の製造方法
US20020189535A1 (en) * 2001-06-14 2002-12-19 Matsushita Electric Industrial Co., Ltd. Method for manufacturing semiconductor crystal film
US6615615B2 (en) 2001-06-29 2003-09-09 Lightwave Microsystems Corporation GePSG core for a planar lightwave circuit
US6670654B2 (en) * 2002-01-09 2003-12-30 International Business Machines Corporation Silicon germanium heterojunction bipolar transistor with carbon incorporation
US6492216B1 (en) * 2002-02-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Method of forming a transistor with a strained channel
US6589850B1 (en) * 2002-06-04 2003-07-08 Newport Fab, Llc Method and system for fabricating a bipolar transistor and related structure
US20040115916A1 (en) * 2002-07-29 2004-06-17 Amberwave Systems Corporation Selective placement of dislocation arrays
JP3643100B2 (ja) * 2002-10-04 2005-04-27 松下電器産業株式会社 半導体装置
FR2868207B1 (fr) * 2004-03-25 2006-09-08 Commissariat Energie Atomique Transistor a effet de champ a materiaux de source, de drain et de canal adaptes et circuit integre comportant un tel transistor
US7396743B2 (en) * 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
KR100617067B1 (ko) * 2005-06-27 2006-08-30 동부일렉트로닉스 주식회사 반도체 소자 및 그의 제조방법
US8017489B2 (en) * 2008-03-13 2011-09-13 International Business Machines Corporation Field effect structure including carbon alloyed channel region and source/drain region not carbon alloyed
EP2202795A1 (en) * 2008-12-24 2010-06-30 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate and semiconductor substrate
JP2012054424A (ja) * 2010-09-01 2012-03-15 Koji Tomita 太陽電池及びその製造方法
US8536012B2 (en) 2011-07-06 2013-09-17 International Business Machines Corporation Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
US9093491B2 (en) 2012-12-05 2015-07-28 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US8956945B2 (en) 2013-02-04 2015-02-17 International Business Machines Corporation Trench isolation for bipolar junction transistors in BiCMOS technology
US8796149B1 (en) 2013-02-18 2014-08-05 International Business Machines Corporation Collector-up bipolar junction transistors in BiCMOS technology
CN103928562B (zh) * 2014-05-04 2016-01-06 厦门大学 横向p-i-n结构Ge光电探测器的制备方法
JP6062971B2 (ja) 2015-01-21 2017-01-18 ファナック株式会社 スカイビング加工指令に基づいて工作機械を制御する数値制御装置
JP2017022175A (ja) * 2015-07-07 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20170037531A1 (en) 2015-08-07 2017-02-09 North Carolina State University Direct conversion of carbon into diamond and structures for a variety of applications
WO2018005619A1 (en) 2016-06-28 2018-01-04 North Carolina State University Synthesis and processing of pure and nv nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
JP6833742B2 (ja) * 2018-02-07 2021-02-24 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法
JP6782263B2 (ja) * 2018-02-07 2020-11-11 株式会社東芝 半導体装置、基板、半導体装置の製造方法、及び、基板の製造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19749962A1 (de) * 1997-11-04 1999-05-06 Inst Halbleiterphysik Gmbh Verfahren zur quantitativen Bestimmung der Misfitversetzungsdichte in Silizium-Germanium-Heterobipolartransistor- Schichtstapeln und Ätzlösung dafür
DE19749962C2 (de) * 1997-11-04 2002-05-16 Inst Halbleiterphysik Gmbh Verfahren zur quantitativen Bestimmung der Misfitversetzungsdichte in Silizium-Germanium-Heterobipolartransistor- Schichtstapeln und Ätzlösung dafür
DE10005405A1 (de) * 2000-02-04 2001-08-09 Inst Halbleiterphysik Gmbh Schichtstapel für pnp-Heterobipolar-Transistor

Also Published As

Publication number Publication date
DE3823249A1 (de) 1989-01-19
JPS6415912A (en) 1989-01-19
US4885614A (en) 1989-12-05
JP2569058B2 (ja) 1997-01-08

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee