DE69624981T2 - Solarzelle und Verfahren zu ihrer Herstellung - Google Patents

Solarzelle und Verfahren zu ihrer Herstellung

Info

Publication number
DE69624981T2
DE69624981T2 DE69624981T DE69624981T DE69624981T2 DE 69624981 T2 DE69624981 T2 DE 69624981T2 DE 69624981 T DE69624981 T DE 69624981T DE 69624981 T DE69624981 T DE 69624981T DE 69624981 T2 DE69624981 T2 DE 69624981T2
Authority
DE
Germany
Prior art keywords
production
solar cell
solar
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69624981T
Other languages
English (en)
Other versions
DE69624981D1 (de
Inventor
Kazuyo Nakamura
Tadashi Hisamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69624981D1 publication Critical patent/DE69624981D1/de
Publication of DE69624981T2 publication Critical patent/DE69624981T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE69624981T 1995-06-05 1996-06-05 Solarzelle und Verfahren zu ihrer Herstellung Expired - Lifetime DE69624981T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13821895 1995-06-05
JP06642196A JP3223102B2 (ja) 1995-06-05 1996-03-22 太陽電池セルおよびその製造方法

Publications (2)

Publication Number Publication Date
DE69624981D1 DE69624981D1 (de) 2003-01-09
DE69624981T2 true DE69624981T2 (de) 2003-07-24

Family

ID=26407622

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69624981T Expired - Lifetime DE69624981T2 (de) 1995-06-05 1996-06-05 Solarzelle und Verfahren zu ihrer Herstellung
DE69636605T Expired - Lifetime DE69636605T2 (de) 1995-06-05 1996-06-05 Solarzelle und ihr Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69636605T Expired - Lifetime DE69636605T2 (de) 1995-06-05 1996-06-05 Solarzelle und ihr Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5738732A (de)
EP (2) EP1231648B1 (de)
JP (1) JP3223102B2 (de)
DE (2) DE69624981T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3468670B2 (ja) * 1997-04-28 2003-11-17 シャープ株式会社 太陽電池セルおよびその製造方法
DE19743692A1 (de) * 1997-10-02 1999-04-08 Zae Bayern Multifunktionsschicht zur Verbesserung des Wirkungsgrades von kristallinen Dünnschicht Silizium Solarzellen
JP4244549B2 (ja) 2001-11-13 2009-03-25 トヨタ自動車株式会社 光電変換素子及びその製造方法
US6660928B1 (en) 2002-04-02 2003-12-09 Essential Research, Inc. Multi-junction photovoltaic cell
US7790574B2 (en) 2004-12-20 2010-09-07 Georgia Tech Research Corporation Boron diffusion in silicon devices
US7501331B2 (en) * 2006-03-31 2009-03-10 Sandisk 3D Llc Low-temperature metal-induced crystallization of silicon-germanium films
US7655542B2 (en) * 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
FR2910711B1 (fr) * 2006-12-20 2018-06-29 Centre Nat Rech Scient Heterojonction a interface intrinsequement amorphe
US20080223440A1 (en) * 2007-01-18 2008-09-18 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
WO2008141863A2 (en) * 2007-05-24 2008-11-27 International Business Machines Corporation Backside contacting on thin layer photovoltaic cells
US7875486B2 (en) * 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
WO2009059240A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Intrinsic amorphous silicon layer
WO2009059238A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
DE102008030693A1 (de) * 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
US20100059110A1 (en) * 2008-09-11 2010-03-11 Applied Materials, Inc. Microcrystalline silicon alloys for thin film and wafer based solar applications
US20110114177A1 (en) * 2009-07-23 2011-05-19 Applied Materials, Inc. Mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
TWI411116B (zh) * 2009-11-17 2013-10-01 Epistar Corp 一種高效率太陽能電池
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
CN102097499B (zh) * 2009-12-14 2015-02-18 晶元光电股份有限公司 太阳能电池
JP5484950B2 (ja) * 2010-02-23 2014-05-07 三洋電機株式会社 太陽電池
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
CN102054890B (zh) * 2010-10-29 2013-01-02 中国科学院半导体研究所 一种单晶薄膜异质结太阳电池及其制备方法
US10043934B2 (en) * 2011-06-08 2018-08-07 International Business Machines Corporation Silicon-containing heterojunction photovoltaic element and device
KR101788163B1 (ko) * 2016-02-12 2017-11-15 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR101772432B1 (ko) * 2016-02-15 2017-08-30 규 현 최 다중밴드 Si-Ge 박막 단결정을 이용한 태양전지 및 그의 효율 개선방법
JP2019159273A (ja) * 2018-03-16 2019-09-19 日本電気株式会社 電界吸収型光変調器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3615855A (en) * 1969-04-03 1971-10-26 Gen Motors Corp Radiant energy photovoltalic device
US3990101A (en) * 1975-10-20 1976-11-02 Rca Corporation Solar cell device having two heterojunctions
US4158577A (en) * 1978-07-05 1979-06-19 Milnes Arthur G High output solar cells
DE3237338A1 (de) * 1982-10-08 1984-04-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 8000 München Ausgangsmaterial fuer epitaxiale silizium-solarzellen
JPS6063968A (ja) * 1984-04-02 1985-04-12 Nippon Telegr & Teleph Corp <Ntt> 太陽電池
JPS61188927A (ja) * 1985-02-15 1986-08-22 Sharp Corp 化合物半導体装置
JPH04168769A (ja) * 1990-10-31 1992-06-16 Sanyo Electric Co Ltd 光起電力素子の製造方法
JPH04249374A (ja) * 1991-02-05 1992-09-04 Sharp Corp 光電変換素子
JPH0582812A (ja) * 1991-09-25 1993-04-02 Matsushita Electric Ind Co Ltd 太陽電池
JP3048732B2 (ja) * 1991-11-25 2000-06-05 三洋電機株式会社 光起電力装置
JPH05259075A (ja) * 1992-03-12 1993-10-08 Hitachi Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP1231648A2 (de) 2002-08-14
DE69636605D1 (de) 2006-11-16
US5738732A (en) 1998-04-14
EP1231648A3 (de) 2004-12-08
EP0747972B1 (de) 2002-11-27
DE69636605T2 (de) 2007-08-16
JP3223102B2 (ja) 2001-10-29
EP0747972A2 (de) 1996-12-11
DE69624981D1 (de) 2003-01-09
EP0747972A3 (de) 1997-11-19
EP1231648B1 (de) 2006-10-04
JPH0955521A (ja) 1997-02-25

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Legal Events

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