DE69230260T2 - Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung - Google Patents
Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellungInfo
- Publication number
- DE69230260T2 DE69230260T2 DE69230260T DE69230260T DE69230260T2 DE 69230260 T2 DE69230260 T2 DE 69230260T2 DE 69230260 T DE69230260 T DE 69230260T DE 69230260 T DE69230260 T DE 69230260T DE 69230260 T2 DE69230260 T2 DE 69230260T2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- substrate
- gas
- compound containing
- group iii
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 6
- 150000001875 compounds Chemical class 0.000 abstract 3
- 150000004767 nitrides Chemical class 0.000 abstract 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1992/001016 WO1994003931A1 (fr) | 1992-08-07 | 1992-08-07 | Dispositif semi-conducteur a base de nitrure et fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69230260D1 DE69230260D1 (de) | 1999-12-09 |
DE69230260T2 true DE69230260T2 (de) | 2000-07-13 |
Family
ID=14042486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69230260T Expired - Lifetime DE69230260T2 (de) | 1992-08-07 | 1992-08-07 | Halbleiteranordnung auf nitridbasis und verfahren zu ihrer herstellung |
Country Status (5)
Country | Link |
---|---|
US (1) | US5602418A (de) |
EP (1) | EP0607435B1 (de) |
CA (1) | CA2120610C (de) |
DE (1) | DE69230260T2 (de) |
WO (1) | WO1994003931A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10244200A1 (de) * | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
Families Citing this family (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69522026T2 (de) * | 1994-03-22 | 2002-05-29 | Toyoda Gosei Kk | Lichtemittierende Halbleitervorrichtung mit Verbindung aus Stickstoff und Elementen der Gruppe III |
US6005258A (en) | 1994-03-22 | 1999-12-21 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III Nitrogen compound having emission layer doped with donor and acceptor impurities |
JPH0832115A (ja) | 1994-07-19 | 1996-02-02 | Sharp Corp | 電極構造およびその製造方法 |
US6900465B2 (en) * | 1994-12-02 | 2005-05-31 | Nichia Corporation | Nitride semiconductor light-emitting device |
US5777350A (en) * | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
JP3771952B2 (ja) * | 1995-06-28 | 2006-05-10 | ソニー株式会社 | 単結晶iii−v族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法 |
JP2795226B2 (ja) * | 1995-07-27 | 1998-09-10 | 日本電気株式会社 | 半導体発光素子及びその製造方法 |
US5798537A (en) * | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
US5900650A (en) * | 1995-08-31 | 1999-05-04 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP3905935B2 (ja) * | 1995-09-01 | 2007-04-18 | 株式会社東芝 | 半導体素子及び半導体素子の製造方法 |
JPH0992882A (ja) * | 1995-09-25 | 1997-04-04 | Mitsubishi Electric Corp | 半導体発光素子,及びその製造方法 |
US5959307A (en) * | 1995-11-06 | 1999-09-28 | Nichia Chemical Industries Ltd. | Nitride semiconductor device |
JP3879173B2 (ja) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | 化合物半導体気相成長方法 |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
EP1439586B1 (de) * | 1996-06-26 | 2014-03-12 | OSRAM Opto Semiconductors GmbH | Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
TW383508B (en) * | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6613247B1 (en) | 1996-09-20 | 2003-09-02 | Osram Opto Semiconductors Gmbh | Wavelength-converting casting composition and white light-emitting semiconductor component |
JPH10163114A (ja) * | 1996-11-29 | 1998-06-19 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP3721674B2 (ja) * | 1996-12-05 | 2005-11-30 | ソニー株式会社 | 窒化物系iii−v族化合物半導体基板の製造方法 |
US7231332B2 (en) * | 1996-12-19 | 2007-06-12 | Fujitsu Limited | Apparatus and method for simulating phenomena of a particle formed of substrate particles and adsorbate particles |
US6358822B1 (en) * | 1997-03-28 | 2002-03-19 | Sharp Kabushiki Kaisha | Method of epitaxially growing III-V compound semiconductor containing nitrogen and at least another group V element utilizing MBE |
US6261931B1 (en) | 1997-06-20 | 2001-07-17 | The Regents Of The University Of California | High quality, semi-insulating gallium nitride and method and system for forming same |
US6849472B2 (en) * | 1997-09-30 | 2005-02-01 | Lumileds Lighting U.S., Llc | Nitride semiconductor device with reduced polarization fields |
US6255671B1 (en) * | 1998-01-05 | 2001-07-03 | International Business Machines Corporation | Metal embedded passivation layer structure for microelectronic interconnect formation, customization and repair |
US6265289B1 (en) * | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
TW418549B (en) * | 1998-06-26 | 2001-01-11 | Sharp Kk | Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same |
JP3289682B2 (ja) | 1998-08-17 | 2002-06-10 | 株式会社村田製作所 | 半導体発光素子 |
US6326654B1 (en) | 1999-02-05 | 2001-12-04 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid ultraviolet detector |
US6162924A (en) | 1999-04-09 | 2000-12-19 | Eastman Chemical Company | Process for halohydrin preparation |
CA2311061C (en) * | 1999-06-11 | 2009-10-06 | National Research Council Of Canada | Molecular beam epitaxy (mbe) growth of semi-insulating c-doped gan |
GB2350927A (en) | 1999-06-12 | 2000-12-13 | Sharp Kk | A method growing nitride semiconductor layer by molecular beam epitaxy |
JP3591710B2 (ja) * | 1999-12-08 | 2004-11-24 | ソニー株式会社 | 窒化物系iii−v族化合物層の成長方法およびそれを用いた基板の製造方法 |
JP2001144325A (ja) * | 1999-11-12 | 2001-05-25 | Sony Corp | 窒化物系iii−v族化合物半導体の製造方法および半導体素子の製造方法 |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US7892974B2 (en) | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7473316B1 (en) * | 2000-04-12 | 2009-01-06 | Aixtron Ag | Method of growing nitrogenous semiconductor crystal materials |
GB2362263A (en) * | 2000-05-12 | 2001-11-14 | Juses Chao | Amorphous and polycrystalline growth of gallium nitride-based semiconductors |
WO2001093336A1 (en) * | 2000-05-31 | 2001-12-06 | Motorola, Inc. | Semiconductor device and method for manufacturing the same |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
US6427066B1 (en) | 2000-06-30 | 2002-07-30 | Motorola, Inc. | Apparatus and method for effecting communications among a plurality of remote stations |
US6477285B1 (en) | 2000-06-30 | 2002-11-05 | Motorola, Inc. | Integrated circuits with optical signal propagation |
US6410941B1 (en) | 2000-06-30 | 2002-06-25 | Motorola, Inc. | Reconfigurable systems using hybrid integrated circuits with optical ports |
DE10034263B4 (de) * | 2000-07-14 | 2008-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Quasisubstrats |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
AU2001277001A1 (en) * | 2000-07-24 | 2002-02-05 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
JP2002075880A (ja) * | 2000-09-01 | 2002-03-15 | Sanyo Electric Co Ltd | 窒化物系半導体層の形成方法および窒化物系半導体素子の製造方法 |
US6493497B1 (en) | 2000-09-26 | 2002-12-10 | Motorola, Inc. | Electro-optic structure and process for fabricating same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US6583034B2 (en) * | 2000-11-22 | 2003-06-24 | Motorola, Inc. | Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure |
US6563118B2 (en) | 2000-12-08 | 2003-05-13 | Motorola, Inc. | Pyroelectric device on a monocrystalline semiconductor substrate and process for fabricating same |
US6559471B2 (en) | 2000-12-08 | 2003-05-06 | Motorola, Inc. | Quantum well infrared photodetector and method for fabricating same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
GB2372632A (en) * | 2001-02-23 | 2002-08-28 | Sharp Kk | A method of growing an InGaN semiconductor layer |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US7046719B2 (en) | 2001-03-08 | 2006-05-16 | Motorola, Inc. | Soft handoff between cellular systems employing different encoding rates |
US6479313B1 (en) * | 2001-05-25 | 2002-11-12 | Kopin Corporation | Method of manufacturing GaN-based p-type compound semiconductors and light emitting diodes |
US6630692B2 (en) * | 2001-05-29 | 2003-10-07 | Lumileds Lighting U.S., Llc | III-Nitride light emitting devices with low driving voltage |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20030010992A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Semiconductor structure and method for implementing cross-point switch functionality |
US6531740B2 (en) | 2001-07-17 | 2003-03-11 | Motorola, Inc. | Integrated impedance matching and stability network |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6498358B1 (en) | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6472694B1 (en) | 2001-07-23 | 2002-10-29 | Motorola, Inc. | Microprocessor structure having a compound semiconductor layer |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6585424B2 (en) | 2001-07-25 | 2003-07-01 | Motorola, Inc. | Structure and method for fabricating an electro-rheological lens |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6594414B2 (en) | 2001-07-25 | 2003-07-15 | Motorola, Inc. | Structure and method of fabrication for an optical switch |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
US6888170B2 (en) * | 2002-03-15 | 2005-05-03 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
US6953740B2 (en) * | 2002-03-15 | 2005-10-11 | Cornell Research Foundation, Inc. | Highly doped III-nitride semiconductors |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
GB2392169A (en) * | 2002-08-23 | 2004-02-25 | Sharp Kk | MBE growth of an AlgaN layer or AlGaN multilayer structure |
GB2392170A (en) * | 2002-08-23 | 2004-02-25 | Sharp Kk | MBE growth of a semiconductor layer structure |
US20040070312A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Integrated circuit and process for fabricating the same |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
JP4063050B2 (ja) * | 2002-10-31 | 2008-03-19 | 豊田合成株式会社 | p型III族窒化物系化合物半導体の電極およびその製造方法 |
GB2395839A (en) * | 2002-11-30 | 2004-06-02 | Sharp Kk | MBE growth of p-type nitride semiconductor materials |
US7115896B2 (en) * | 2002-12-04 | 2006-10-03 | Emcore Corporation | Semiconductor structures for gallium nitride-based devices |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
US6949443B2 (en) * | 2003-10-10 | 2005-09-27 | Taiwan Semiconductor Manufacturing Company | High performance semiconductor devices fabricated with strain-induced processes and methods for making same |
JP2005191099A (ja) * | 2003-12-24 | 2005-07-14 | ▲さん▼圓光電股▲ふん▼有限公司 | 発光ダイオード装置 |
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US7417266B1 (en) | 2004-06-10 | 2008-08-26 | Qspeed Semiconductor Inc. | MOSFET having a JFET embedded as a body diode |
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JP2006339605A (ja) * | 2005-06-06 | 2006-12-14 | Sumitomo Electric Ind Ltd | 化合物半導体部材のダメージ評価方法、化合物半導体部材の製造方法、窒化ガリウム系化合物半導体部材及び窒化ガリウム系化合物半導体膜 |
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US8633094B2 (en) | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
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US9331244B2 (en) | 2013-02-25 | 2016-05-03 | Sensor Electronic Technology, Inc. | Semiconductor structure with inhomogeneous regions |
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Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4404265A (en) * | 1969-10-01 | 1983-09-13 | Rockwell International Corporation | Epitaxial composite and method of making |
JPS5710280A (en) * | 1980-06-23 | 1982-01-19 | Futaba Corp | Gan light emitting element |
JP2829319B2 (ja) * | 1988-09-16 | 1998-11-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5281830A (en) * | 1990-10-27 | 1994-01-25 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
JP3160914B2 (ja) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
JP3352712B2 (ja) * | 1991-12-18 | 2002-12-03 | 浩 天野 | 窒化ガリウム系半導体素子及びその製造方法 |
-
1992
- 1992-08-07 CA CA002120610A patent/CA2120610C/en not_active Expired - Lifetime
- 1992-08-07 WO PCT/JP1992/001016 patent/WO1994003931A1/ja active IP Right Grant
- 1992-08-07 EP EP92916808A patent/EP0607435B1/de not_active Expired - Lifetime
- 1992-08-07 US US08/211,322 patent/US5602418A/en not_active Expired - Lifetime
- 1992-08-07 DE DE69230260T patent/DE69230260T2/de not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10244200A1 (de) * | 2002-09-23 | 2004-04-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
US7115907B2 (en) | 2002-09-23 | 2006-10-03 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component |
Also Published As
Publication number | Publication date |
---|---|
WO1994003931A1 (fr) | 1994-02-17 |
DE69230260D1 (de) | 1999-12-09 |
CA2120610A1 (en) | 1994-02-08 |
CA2120610C (en) | 1999-03-02 |
US5602418A (en) | 1997-02-11 |
EP0607435A1 (de) | 1994-07-27 |
EP0607435A4 (de) | 1995-02-01 |
EP0607435B1 (de) | 1999-11-03 |
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