DE3812621A1 - Verfahren zum herstellen eines grabenkondensators, beispielsweise fuer speicherzellen - Google Patents

Verfahren zum herstellen eines grabenkondensators, beispielsweise fuer speicherzellen

Info

Publication number
DE3812621A1
DE3812621A1 DE3812621A DE3812621A DE3812621A1 DE 3812621 A1 DE3812621 A1 DE 3812621A1 DE 3812621 A DE3812621 A DE 3812621A DE 3812621 A DE3812621 A DE 3812621A DE 3812621 A1 DE3812621 A1 DE 3812621A1
Authority
DE
Germany
Prior art keywords
trench
polysilicon
deposited
etching
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE3812621A
Other languages
German (de)
English (en)
Inventor
Ju-Ho Song
Dae-Hee Hahn
Geung-Won Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of DE3812621A1 publication Critical patent/DE3812621A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE3812621A 1987-04-30 1988-04-15 Verfahren zum herstellen eines grabenkondensators, beispielsweise fuer speicherzellen Ceased DE3812621A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870004242A KR900003262B1 (ko) 1987-04-30 1987-04-30 반도체 장치의 제조방법

Publications (1)

Publication Number Publication Date
DE3812621A1 true DE3812621A1 (de) 1988-11-17

Family

ID=19261098

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3812621A Ceased DE3812621A1 (de) 1987-04-30 1988-04-15 Verfahren zum herstellen eines grabenkondensators, beispielsweise fuer speicherzellen

Country Status (6)

Country Link
JP (1) JPS63299263A (ko)
KR (1) KR900003262B1 (ko)
DE (1) DE3812621A1 (ko)
FR (1) FR2614731B1 (ko)
GB (1) GB2205993A (ko)
NL (1) NL8801030A (ko)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327476A (en) * 1979-12-07 1982-05-04 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing semiconductor devices
US4360414A (en) * 1980-12-05 1982-11-23 Siemens Aktiengesellschaft Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching
DE3315719A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsiliziden bzw. silizid-polysilizium bestehenden doppelschichten fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
EP0265616A2 (en) * 1986-10-31 1988-05-04 International Business Machines Corporation A semiconductor trench capacitor structure

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450042A (en) * 1982-07-06 1984-05-22 Texas Instruments Incorporated Plasma etch chemistry for anisotropic etching of silicon
JPS6079737A (ja) * 1983-10-05 1985-05-07 Nec Corp 半導体装置の製造方法
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
JPS61288460A (ja) * 1985-06-17 1986-12-18 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
US4714520A (en) * 1985-07-25 1987-12-22 Advanced Micro Devices, Inc. Method for filling a trench in an integrated circuit structure without producing voids

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4327476A (en) * 1979-12-07 1982-05-04 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing semiconductor devices
US4360414A (en) * 1980-12-05 1982-11-23 Siemens Aktiengesellschaft Method of producing structures comprised of layers consisting of silicides or silicide-polysilicon by reactive sputter etching
DE3315719A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsiliziden bzw. silizid-polysilizium bestehenden doppelschichten fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
EP0265616A2 (en) * 1986-10-31 1988-05-04 International Business Machines Corporation A semiconductor trench capacitor structure

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
US-Z.: "IBM Technical Disclosure Bulletin", Vol. 26, Nr. 11, 1984, S. 5801-5802 *
-Z.: "IEEE Transactions on Electron Devices", Vol. ED-31, Nr. 6, 1984, S. 746-753 *
-Z.: "J. Electrochem. Soc.: Solid-State Science and Technology, Vol. 133, Nr. 9, 1986, S. 1887-1895 *
-Z.: "Solid State Technology", Oktober 1987, S. 109-115 *

Also Published As

Publication number Publication date
KR880013247A (ko) 1988-11-30
JPH0520908B2 (ko) 1993-03-22
NL8801030A (nl) 1988-11-16
FR2614731A1 (fr) 1988-11-04
GB2205993A (en) 1988-12-21
GB8808824D0 (en) 1988-05-18
KR900003262B1 (ko) 1990-05-12
JPS63299263A (ja) 1988-12-06
FR2614731B1 (fr) 1992-01-03

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8127 New person/name/address of the applicant

Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, KR

8131 Rejection