DE3778975D1 - Integrierter halbleiterschaltkreis mit analogen und digitalen komponenten. - Google Patents

Integrierter halbleiterschaltkreis mit analogen und digitalen komponenten.

Info

Publication number
DE3778975D1
DE3778975D1 DE8787107683T DE3778975T DE3778975D1 DE 3778975 D1 DE3778975 D1 DE 3778975D1 DE 8787107683 T DE8787107683 T DE 8787107683T DE 3778975 T DE3778975 T DE 3778975T DE 3778975 D1 DE3778975 D1 DE 3778975D1
Authority
DE
Germany
Prior art keywords
analog
semiconductor circuit
integrated semiconductor
digital components
digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787107683T
Other languages
German (de)
English (en)
Inventor
Minoru C O Patent Divi Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3778975D1 publication Critical patent/DE3778975D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
DE8787107683T 1986-05-27 1987-05-26 Integrierter halbleiterschaltkreis mit analogen und digitalen komponenten. Expired - Lifetime DE3778975D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61121617A JPS62277745A (ja) 1986-05-27 1986-05-27 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3778975D1 true DE3778975D1 (de) 1992-06-17

Family

ID=14815686

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787107683T Expired - Lifetime DE3778975D1 (de) 1986-05-27 1987-05-26 Integrierter halbleiterschaltkreis mit analogen und digitalen komponenten.

Country Status (4)

Country Link
US (1) US4935800A (https=)
EP (1) EP0250869B1 (https=)
JP (1) JPS62277745A (https=)
DE (1) DE3778975D1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
JPH02268463A (ja) * 1989-04-10 1990-11-02 Toshiba Corp 複合型半導体素子
JP2790311B2 (ja) * 1989-04-28 1998-08-27 富士通株式会社 半導体集積回路
JPH0358484A (ja) * 1989-07-27 1991-03-13 Toshiba Corp 半導体装置とその製造方法
US5212398A (en) * 1989-11-30 1993-05-18 Kabushiki Kaisha Toshiba BiMOS structure having a protective diode
JP2625602B2 (ja) * 1991-01-18 1997-07-02 インターナショナル・ビジネス・マシーンズ・コーポレイション 集積回路デバイスの製造プロセス
DE69232348T2 (de) * 1991-09-24 2002-08-14 Matsushita Electric Industrial Co., Ltd. Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
EP0676802B1 (en) * 1994-03-31 1998-12-23 STMicroelectronics S.r.l. a method of manufacturing a semiconductor device with a buried junction
US5485029A (en) * 1994-06-30 1996-01-16 International Business Machines Corporation On-chip ground plane for semiconductor devices to reduce parasitic signal propagation
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
JPH09120995A (ja) * 1995-08-22 1997-05-06 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP3372171B2 (ja) * 1995-08-29 2003-01-27 東芝マイクロエレクトロニクス株式会社 半導体装置
JP3638778B2 (ja) 1997-03-31 2005-04-13 株式会社ルネサステクノロジ 半導体集積回路装置およびその製造方法
JP3050166B2 (ja) * 1997-05-30 2000-06-12 日本電気株式会社 半導体装置の製造方法
JP2000294624A (ja) * 1999-04-05 2000-10-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6600199B2 (en) 2000-12-29 2003-07-29 International Business Machines Corporation Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunity
US7825488B2 (en) * 2006-05-31 2010-11-02 Advanced Analogic Technologies, Inc. Isolation structures for integrated circuits and modular methods of forming the same
US8791546B2 (en) * 2010-10-21 2014-07-29 Freescale Semiconductor, Inc. Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations
US8445316B2 (en) * 2011-06-17 2013-05-21 International Business Machines Corporation Non-lithographic method of patterning contacts for a photovoltaic device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
JPS6043024B2 (ja) * 1978-12-30 1985-09-26 富士通株式会社 半導体装置の製造方法
US4236294A (en) * 1979-03-16 1980-12-02 International Business Machines Corporation High performance bipolar device and method for making same
US4238278A (en) * 1979-06-14 1980-12-09 International Business Machines Corporation Polycrystalline silicon oxidation method for making shallow and deep isolation trenches
DE2946963A1 (de) * 1979-11-21 1981-06-04 Siemens AG, 1000 Berlin und 8000 München Schnelle bipolare transistoren
JPS5676564A (en) * 1979-11-29 1981-06-24 Toshiba Corp Semiconductor device and manufacture thereof
DE3265339D1 (en) * 1981-03-20 1985-09-19 Toshiba Kk Method for manufacturing semiconductor device
JPS5827356A (ja) * 1981-08-10 1983-02-18 Toshiba Corp 半導体集積回路
JPS59119848A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
JPS6057950A (ja) * 1983-09-09 1985-04-03 Hitachi Ltd 半導体集積回路装置
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
JPS60211969A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
US4935800A (en) 1990-06-19
JPS62277745A (ja) 1987-12-02
EP0250869B1 (en) 1992-05-13
EP0250869A1 (en) 1988-01-07
JPH0581058B2 (https=) 1993-11-11

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