DE3780598D1 - Bauelemente und bauelemente-herstellung mit borsilikatglass. - Google Patents

Bauelemente und bauelemente-herstellung mit borsilikatglass.

Info

Publication number
DE3780598D1
DE3780598D1 DE8787310778T DE3780598T DE3780598D1 DE 3780598 D1 DE3780598 D1 DE 3780598D1 DE 8787310778 T DE8787310778 T DE 8787310778T DE 3780598 T DE3780598 T DE 3780598T DE 3780598 D1 DE3780598 D1 DE 3780598D1
Authority
DE
Germany
Prior art keywords
components
component manufacture
borsilicate
glass
borsilicate glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787310778T
Other languages
English (en)
Other versions
DE3780598T2 (de
Inventor
Gou-Chung Chi
Shobha Singh
Uitert Gerard Van
George John Zydzik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE3780598D1 publication Critical patent/DE3780598D1/de
Publication of DE3780598T2 publication Critical patent/DE3780598T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02145—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
DE8787310778T 1986-12-22 1987-12-08 Bauelemente und bauelemente-herstellung mit borsilikatglass. Expired - Fee Related DE3780598T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/945,016 US4819039A (en) 1986-12-22 1986-12-22 Devices and device fabrication with borosilicate glass

Publications (2)

Publication Number Publication Date
DE3780598D1 true DE3780598D1 (de) 1992-08-27
DE3780598T2 DE3780598T2 (de) 1992-12-10

Family

ID=25482478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787310778T Expired - Fee Related DE3780598T2 (de) 1986-12-22 1987-12-08 Bauelemente und bauelemente-herstellung mit borsilikatglass.

Country Status (5)

Country Link
US (1) US4819039A (de)
EP (1) EP0272833B1 (de)
JP (1) JPH0732265B2 (de)
CA (1) CA1321123C (de)
DE (1) DE3780598T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4955031A (en) * 1988-07-12 1990-09-04 University Of Connecticut Metal insulator semiconductor heterostructure lasers
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
US5221367A (en) * 1988-08-03 1993-06-22 International Business Machines, Corp. Strained defect-free epitaxial mismatched heterostructures and method of fabrication
US5047369A (en) * 1989-05-01 1991-09-10 At&T Bell Laboratories Fabrication of semiconductor devices using phosphosilicate glasses
JPH04111477A (ja) * 1990-08-31 1992-04-13 Sumitomo Electric Ind Ltd 受光素子
US5412229A (en) * 1990-08-31 1995-05-02 Sumitomo Electric Industries, Ltd. Semiconductor light detecting device making use of a photodiode chip
US6105006A (en) * 1997-12-22 2000-08-15 Motorola Inc Transaction authentication for 1-way wireless financial messaging units
US6044100A (en) * 1997-12-23 2000-03-28 Lucent Technologies Inc. Lateral injection VCSEL
US6169756B1 (en) 1997-12-23 2001-01-02 Lucent Technologies Inc. Vertical cavity surface-emitting laser with optical guide and current aperture
US6208680B1 (en) 1997-12-23 2001-03-27 Lucent Technologies Inc. Optical devices having ZNS/CA-MG-fluoride multi-layered mirrors
CA2307745A1 (en) * 1999-07-15 2001-01-15 Sumitomo Electric Industries, Ltd. Photodiode
CN1656612A (zh) * 2002-05-23 2005-08-17 肖特股份公司 用于高频的玻璃材料
US20050181177A1 (en) * 2004-02-18 2005-08-18 Jamie Knapp Isotropic glass-like conformal coatings and methods for applying same to non-planar substrate surfaces at microscopic levels
US8302428B2 (en) * 2007-02-28 2012-11-06 Corning Incorporated Extruded glass structures and methods for manufacturing the same
JP4948458B2 (ja) * 2008-03-19 2012-06-06 三洋電機株式会社 太陽電池の製造方法及び太陽電池
US9985158B2 (en) 2012-06-13 2018-05-29 Massachusetts Institute Of Technology Visibly transparent, luminescent solar concentrator
EP3233448B1 (de) 2014-12-17 2019-09-18 Novartis AG Verfahren zur verwendung von wiederverwendbaren linsenformen

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2106744A (en) * 1934-03-19 1938-02-01 Corning Glass Works Treated borosilicate glass
US2221709A (en) * 1938-01-29 1940-11-12 Corning Glass Works Borosilicate glass
NL242742A (de) * 1958-09-04
US4228446A (en) * 1979-05-10 1980-10-14 Rca Corporation Reduced blooming device having enhanced quantum efficiency
US4374391A (en) * 1980-09-24 1983-02-15 Bell Telephone Laboratories, Incorporated Device fabrication procedure
US4492717A (en) * 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
JPS59150492A (ja) * 1983-02-04 1984-08-28 株式会社東芝 厚膜多層基板の製造方法
FR2558152B1 (fr) * 1984-01-13 1992-03-27 Corning Glass Works Verres a usage ophtalmique de faible densite, absorbant les radiations ultraviolettes et ayant une haute transmission dans le visible et lentilles correctrices constituees de ces verres

Also Published As

Publication number Publication date
EP0272833A1 (de) 1988-06-29
JPS63175431A (ja) 1988-07-19
DE3780598T2 (de) 1992-12-10
JPH0732265B2 (ja) 1995-04-10
CA1321123C (en) 1993-08-10
US4819039A (en) 1989-04-04
EP0272833B1 (de) 1992-07-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee