DE3688694T2 - Rillenartiger Kondensator und DRAM-Speicherzelle. - Google Patents
Rillenartiger Kondensator und DRAM-Speicherzelle.Info
- Publication number
- DE3688694T2 DE3688694T2 DE86402222T DE3688694T DE3688694T2 DE 3688694 T2 DE3688694 T2 DE 3688694T2 DE 86402222 T DE86402222 T DE 86402222T DE 3688694 T DE3688694 T DE 3688694T DE 3688694 T2 DE3688694 T2 DE 3688694T2
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- type
- dram memory
- pinhole
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/785,195 US4679300A (en) | 1985-10-07 | 1985-10-07 | Method of making a trench capacitor and dram memory cell |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3688694D1 DE3688694D1 (de) | 1993-08-19 |
DE3688694T2 true DE3688694T2 (de) | 1994-01-20 |
Family
ID=25134727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE86402222T Expired - Fee Related DE3688694T2 (de) | 1985-10-07 | 1986-10-07 | Rillenartiger Kondensator und DRAM-Speicherzelle. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4679300A (de) |
EP (1) | EP0220109B1 (de) |
JP (1) | JPH0810754B2 (de) |
KR (1) | KR950008791B1 (de) |
AT (1) | ATE91569T1 (de) |
DE (1) | DE3688694T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045916A (en) * | 1985-01-22 | 1991-09-03 | Fairchild Semiconductor Corporation | Extended silicide and external contact technology |
US5227316A (en) * | 1985-01-22 | 1993-07-13 | National Semiconductor Corporation | Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size |
US5061986A (en) * | 1985-01-22 | 1991-10-29 | National Semiconductor Corporation | Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics |
US4737829A (en) * | 1985-03-28 | 1988-04-12 | Nec Corporation | Dynamic random access memory device having a plurality of one-transistor type memory cells |
JPH0682800B2 (ja) * | 1985-04-16 | 1994-10-19 | 株式会社東芝 | 半導体記憶装置 |
US5082795A (en) * | 1986-12-05 | 1992-01-21 | General Electric Company | Method of fabricating a field effect semiconductor device having a self-aligned structure |
JP2523712B2 (ja) * | 1987-11-25 | 1996-08-14 | 松下電器産業株式会社 | プラズマド―ピング方法 |
US5021852A (en) * | 1989-05-18 | 1991-06-04 | Texas Instruments Incorporated | Semiconductor integrated circuit device |
KR910013554A (ko) * | 1989-12-08 | 1991-08-08 | 김광호 | 반도체 장치 및 그 제조방법 |
KR930702095A (ko) * | 1990-10-02 | 1993-09-08 | 죤, 씨. 울훼 | 고체 도핑제 소스와 신속한 열처리를 사용한 실리콘 웨이퍼 도핑장치 및 방법 |
US5550082A (en) * | 1993-11-18 | 1996-08-27 | The University Of Houston System | Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing |
US6057195A (en) * | 1998-05-22 | 2000-05-02 | Texas Instruments - Acer Incorporated | Method of fabricating high density flat cell mask ROM |
US6489646B1 (en) * | 2002-01-23 | 2002-12-03 | Winbond Electronics Corporation | DRAM cells with buried trench capacitors |
US7608927B2 (en) * | 2002-08-29 | 2009-10-27 | Micron Technology, Inc. | Localized biasing for silicon on insulator structures |
US7633110B2 (en) * | 2004-09-21 | 2009-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cell |
US10453754B1 (en) | 2018-06-28 | 2019-10-22 | Globalfoundries Inc. | Diffused contact extension dopants in a transistor device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7710635A (nl) * | 1977-09-29 | 1979-04-02 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS5681974A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Manufacture of mos type semiconductor device |
US4353086A (en) * | 1980-05-07 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Silicon integrated circuits |
US4397075A (en) * | 1980-07-03 | 1983-08-09 | International Business Machines Corporation | FET Memory cell structure and process |
JPS583269A (ja) * | 1981-06-30 | 1983-01-10 | Fujitsu Ltd | 縦型mosダイナミツクメモリ−セル |
JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
JPS60126861A (ja) * | 1983-12-13 | 1985-07-06 | Fujitsu Ltd | 半導体記憶装置 |
US4604150A (en) * | 1985-01-25 | 1986-08-05 | At&T Bell Laboratories | Controlled boron doping of silicon |
-
1985
- 1985-10-07 US US06/785,195 patent/US4679300A/en not_active Expired - Lifetime
-
1986
- 1986-10-07 AT AT86402222T patent/ATE91569T1/de not_active IP Right Cessation
- 1986-10-07 EP EP86402222A patent/EP0220109B1/de not_active Expired - Lifetime
- 1986-10-07 DE DE86402222T patent/DE3688694T2/de not_active Expired - Fee Related
- 1986-10-07 JP JP61238993A patent/JPH0810754B2/ja not_active Expired - Fee Related
- 1986-10-07 KR KR1019860008393A patent/KR950008791B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS62163365A (ja) | 1987-07-20 |
DE3688694D1 (de) | 1993-08-19 |
US4679300A (en) | 1987-07-14 |
KR950008791B1 (ko) | 1995-08-08 |
EP0220109B1 (de) | 1993-07-14 |
ATE91569T1 (de) | 1993-07-15 |
JPH0810754B2 (ja) | 1996-01-31 |
EP0220109A3 (en) | 1989-05-31 |
EP0220109A2 (de) | 1987-04-29 |
KR870004516A (ko) | 1987-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SGS-THOMSON MICROELECTRONICS INC. (N.D.GES.DES STA |
|
8339 | Ceased/non-payment of the annual fee |