ATE91569T1 - Rillenartiger kondensator und dram-speicherzelle. - Google Patents

Rillenartiger kondensator und dram-speicherzelle.

Info

Publication number
ATE91569T1
ATE91569T1 AT86402222T AT86402222T ATE91569T1 AT E91569 T1 ATE91569 T1 AT E91569T1 AT 86402222 T AT86402222 T AT 86402222T AT 86402222 T AT86402222 T AT 86402222T AT E91569 T1 ATE91569 T1 AT E91569T1
Authority
AT
Austria
Prior art keywords
type
pinhole
dram cell
capacitor
grooved capacitor
Prior art date
Application number
AT86402222T
Other languages
English (en)
Inventor
Tsiu C Chan
Yu-Pin Han
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Application granted granted Critical
Publication of ATE91569T1 publication Critical patent/ATE91569T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/036—Making the capacitor or connections thereto the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/416—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT86402222T 1985-10-07 1986-10-07 Rillenartiger kondensator und dram-speicherzelle. ATE91569T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/785,195 US4679300A (en) 1985-10-07 1985-10-07 Method of making a trench capacitor and dram memory cell
EP86402222A EP0220109B1 (de) 1985-10-07 1986-10-07 Rillenartiger Kondensator und DRAM-Speicherzelle

Publications (1)

Publication Number Publication Date
ATE91569T1 true ATE91569T1 (de) 1993-07-15

Family

ID=25134727

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86402222T ATE91569T1 (de) 1985-10-07 1986-10-07 Rillenartiger kondensator und dram-speicherzelle.

Country Status (6)

Country Link
US (1) US4679300A (de)
EP (1) EP0220109B1 (de)
JP (1) JPH0810754B2 (de)
KR (1) KR950008791B1 (de)
AT (1) ATE91569T1 (de)
DE (1) DE3688694T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
US5045916A (en) * 1985-01-22 1991-09-03 Fairchild Semiconductor Corporation Extended silicide and external contact technology
US5061986A (en) * 1985-01-22 1991-10-29 National Semiconductor Corporation Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics
US4737829A (en) * 1985-03-28 1988-04-12 Nec Corporation Dynamic random access memory device having a plurality of one-transistor type memory cells
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
US5082795A (en) * 1986-12-05 1992-01-21 General Electric Company Method of fabricating a field effect semiconductor device having a self-aligned structure
JP2523712B2 (ja) * 1987-11-25 1996-08-14 松下電器産業株式会社 プラズマド―ピング方法
US5021852A (en) * 1989-05-18 1991-06-04 Texas Instruments Incorporated Semiconductor integrated circuit device
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
WO1992005896A1 (en) * 1990-10-02 1992-04-16 University Of Houston System Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing
US5550082A (en) * 1993-11-18 1996-08-27 The University Of Houston System Method and apparatus for doping silicon wafers using a solid dopant source and rapid thermal processing
US6057195A (en) * 1998-05-22 2000-05-02 Texas Instruments - Acer Incorporated Method of fabricating high density flat cell mask ROM
US6489646B1 (en) * 2002-01-23 2002-12-03 Winbond Electronics Corporation DRAM cells with buried trench capacitors
US7608927B2 (en) * 2002-08-29 2009-10-27 Micron Technology, Inc. Localized biasing for silicon on insulator structures
US7633110B2 (en) * 2004-09-21 2009-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Memory cell
US10453754B1 (en) 2018-06-28 2019-10-22 Globalfoundries Inc. Diffused contact extension dopants in a transistor device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7710635A (nl) * 1977-09-29 1979-04-02 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
JPS5681974A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of mos type semiconductor device
US4353086A (en) * 1980-05-07 1982-10-05 Bell Telephone Laboratories, Incorporated Silicon integrated circuits
US4397075A (en) * 1980-07-03 1983-08-09 International Business Machines Corporation FET Memory cell structure and process
JPS583269A (ja) * 1981-06-30 1983-01-10 Fujitsu Ltd 縦型ｍｏｓダイナミツクメモリ−セル
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
JPS60126861A (ja) * 1983-12-13 1985-07-06 Fujitsu Ltd 半導体記憶装置
US4604150A (en) * 1985-01-25 1986-08-05 At&T Bell Laboratories Controlled boron doping of silicon

Also Published As

Publication number Publication date
EP0220109A2 (de) 1987-04-29
US4679300A (en) 1987-07-14
KR870004516A (ko) 1987-05-11
EP0220109B1 (de) 1993-07-14
DE3688694D1 (de) 1993-08-19
DE3688694T2 (de) 1994-01-20
JPH0810754B2 (ja) 1996-01-31
JPS62163365A (ja) 1987-07-20
KR950008791B1 (ko) 1995-08-08
EP0220109A3 (en) 1989-05-31

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties