GB1088793A - Electromechanical transducer - Google Patents

Electromechanical transducer

Info

Publication number
GB1088793A
GB1088793A GB5222564A GB5222564A GB1088793A GB 1088793 A GB1088793 A GB 1088793A GB 5222564 A GB5222564 A GB 5222564A GB 5222564 A GB5222564 A GB 5222564A GB 1088793 A GB1088793 A GB 1088793A
Authority
GB
United Kingdom
Prior art keywords
biased
electrode
diaphragm
junction
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5222564A
Inventor
William Donald Cragg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB1017267A priority Critical patent/GB1088794A/en
Priority to GB5222564A priority patent/GB1088793A/en
Priority to DE19651462161 priority patent/DE1462161B2/en
Priority to CH1758465A priority patent/CH460956A/en
Priority to BE674221D priority patent/BE674221A/xx
Priority to FR43495A priority patent/FR1461244A/en
Priority to NL6516784A priority patent/NL6516784A/xx
Publication of GB1088793A publication Critical patent/GB1088793A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00—Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006—Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)

Abstract

1,088,793. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. Dec. 17, 1965 [Dec. 23, 1964], No. 52225/64. Heading H1K. [Also in Division H4] A microphone or other transducer comprises a semi-conductor element biased for flow of electric current therein and a movable member spaced from the element, the member being biased with respect to the element to cause an electrostatic field to be set up in the element. Means responsive to an applied mechanical force is provided to vary the spacing of the member from the element. The strength of the field in the element varies in accordance with the spacing of the member from the element and so varies the value of the electric current flowing in the element. In one microphone (Fig. 3) a field effect transistor has a movable gate electrode comprising an aluminium layer 21 evaporated on a dielectric diaphragm 22 fastened at its edge to the microphone enclosure. Two P-type regions 16, of side-by-side strip configuration (Fig. 6, not shown), are diffused in an N-type block 14 and block 14 is covered by slicon oxide insulation 17, as is half of each region 16. A metal coating 18 connects one P-type region 16 to a positive potential 19 (source) to which is also connected block 14. The other P-type region is connected to a negative potential 20 (drain). In a modification, Figs. 4, 5 (not shown) the P-type regions are formed as a central region (16a) and a surrounding annular region (16b). The gate electrode is an annular layer (21). In each embodiment an aluminium strip 23 extends from the layer 21 to the edge of the diaphragm 22 for connection to a bias potential 24. In another embodiment, Fig. 1 (not shown) the reverse biased P-N junction of a planar epitaxial transistor has a biased electrode (4) near the base-collector junction. The biased electrode (4) is coupled to a diaphragm. An electrical output signal is taken from a resistor (6) in series between base (1) and collector (2). A similar effect is obtained by using the junction between emitter (7) and base (1). Alternatively a P-N junction diode (8), Fig. 2 (not shown, is reverse biased by a battery (9). A movable electrode (10) fastened to a diaphragm (11) is biased by a battery (12) and an ou put signal responsive to the modulation of the spacing of the electrode (10) is taken from a resistance (13) in series between the positive and negative electrodes of the diode.
GB5222564A 1964-12-23 1964-12-23 Electromechanical transducer Expired GB1088793A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GB1017267A GB1088794A (en) 1964-12-23 1964-12-23 Improvements in or relating to semiconductor devices
GB5222564A GB1088793A (en) 1964-12-23 1964-12-23 Electromechanical transducer
DE19651462161 DE1462161B2 (en) 1964-12-23 1965-12-07 Pressure sensitive semiconductor device
CH1758465A CH460956A (en) 1964-12-23 1965-12-21 Field effect semiconductor device and its use as an electromechanical converter
BE674221D BE674221A (en) 1964-12-23 1965-12-23
FR43495A FR1461244A (en) 1964-12-23 1965-12-23 Improvements to electromechanical transducers
NL6516784A NL6516784A (en) 1964-12-23 1965-12-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5222564A GB1088793A (en) 1964-12-23 1964-12-23 Electromechanical transducer

Publications (1)

Publication Number Publication Date
GB1088793A true GB1088793A (en) 1967-10-25

Family

ID=10463108

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1017267A Expired GB1088794A (en) 1964-12-23 1964-12-23 Improvements in or relating to semiconductor devices
GB5222564A Expired GB1088793A (en) 1964-12-23 1964-12-23 Electromechanical transducer

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB1017267A Expired GB1088794A (en) 1964-12-23 1964-12-23 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (1) BE674221A (en)
CH (1) CH460956A (en)
DE (1) DE1462161B2 (en)
FR (1) FR1461244A (en)
GB (2) GB1088794A (en)
NL (1) NL6516784A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480488A (en) * 1982-02-19 1984-11-06 The General Electric Company, P.L.C. Force sensor with a piezoelectric FET
GB2175744A (en) * 1985-04-27 1986-12-03 Messerschmitt Boelkow Blohm An electrical transmitter for measuring mechanical variables

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8503574A (en) * 1985-12-24 1987-07-16 Sentron V O F PRESSURE SENSOR.
US4767973A (en) * 1987-07-06 1988-08-30 Sarcos Incorporated Systems and methods for sensing position and movement
US5198740A (en) * 1989-10-04 1993-03-30 University Of Utah Research Foundation Sliding contact mechanical/electrical displacement transducer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480488A (en) * 1982-02-19 1984-11-06 The General Electric Company, P.L.C. Force sensor with a piezoelectric FET
GB2175744A (en) * 1985-04-27 1986-12-03 Messerschmitt Boelkow Blohm An electrical transmitter for measuring mechanical variables
US4772928A (en) * 1985-04-27 1988-09-20 Messerschmitt-Bolkow-Blohm Gmbh Electric transducer for measuring mechanical quantities

Also Published As

Publication number Publication date
BE674221A (en) 1966-06-23
NL6516784A (en) 1966-06-24
DE1462161B2 (en) 1970-05-21
DE1462161A1 (en) 1969-04-17
FR1461244A (en) 1966-12-10
CH460956A (en) 1968-08-15
GB1088794A (en) 1967-10-25

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