DE3580690D1 - Integrierte halbleiterschaltungsanordnung mit einer datenspeicherschaltung eines schmelzsicherungstyps. - Google Patents

Integrierte halbleiterschaltungsanordnung mit einer datenspeicherschaltung eines schmelzsicherungstyps.

Info

Publication number
DE3580690D1
DE3580690D1 DE8585400552T DE3580690T DE3580690D1 DE 3580690 D1 DE3580690 D1 DE 3580690D1 DE 8585400552 T DE8585400552 T DE 8585400552T DE 3580690 T DE3580690 T DE 3580690T DE 3580690 D1 DE3580690 D1 DE 3580690D1
Authority
DE
Germany
Prior art keywords
voltage
fuse
circuit
feed lines
meltfuse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8585400552T
Other languages
German (de)
English (en)
Inventor
Yoshihiro Takemae
Tomio Nakano
Takeo Esuperansa Dai Tatematsu
Norihisa Tsuge
Junji Ogawa
Takashi Horii
Yasuhiro Fujii
Masao Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3580690D1 publication Critical patent/DE3580690D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/493—Fuses, i.e. interconnections changeable from conductive to non-conductive

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE8585400552T 1984-03-23 1985-03-22 Integrierte halbleiterschaltungsanordnung mit einer datenspeicherschaltung eines schmelzsicherungstyps. Expired - Lifetime DE3580690D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59055501A JPS60201598A (ja) 1984-03-23 1984-03-23 半導体集積回路

Publications (1)

Publication Number Publication Date
DE3580690D1 true DE3580690D1 (de) 1991-01-10

Family

ID=13000398

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585400552T Expired - Lifetime DE3580690D1 (de) 1984-03-23 1985-03-22 Integrierte halbleiterschaltungsanordnung mit einer datenspeicherschaltung eines schmelzsicherungstyps.

Country Status (5)

Country Link
US (1) US4707806A (https=)
EP (1) EP0159928B1 (https=)
JP (1) JPS60201598A (https=)
KR (1) KR900000171B1 (https=)
DE (1) DE3580690D1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2608826B1 (fr) * 1986-12-19 1989-03-17 Eurotechnique Sa Circuit integre comportant des elements d'aiguillage vers des elements de redondance dans une memoire
FR2623653B1 (fr) * 1987-11-24 1992-10-23 Sgs Thomson Microelectronics Procede de test de cellules de memoire electriquement programmable et circuit integre correspondant
JP2509730B2 (ja) * 1989-08-11 1996-06-26 株式会社東芝 半導体メモリ装置及びその製造方法
US5334880A (en) * 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
US5351101A (en) * 1993-08-31 1994-09-27 Eastman Kodak Company Photographic camera and film cartridge with double exposure prevention
US5384746A (en) * 1994-01-28 1995-01-24 Texas Instruments Incorporated Circuit and method for storing and retrieving data
JPH10335463A (ja) * 1997-05-29 1998-12-18 Nec Corp 半導体集積回路
US5973977A (en) * 1998-07-06 1999-10-26 Pmc-Sierra Ltd. Poly fuses in CMOS integrated circuits
FR2806907B1 (fr) 2000-03-31 2003-01-24 Oreal Composition cosmetique a base de nanoparticules et de composes organiques du silicium solubles dans l'eau
US6829737B1 (en) 2000-08-30 2004-12-07 Micron Technology, Inc. Method and system for storing device test information on a semiconductor device using on-device logic for determination of test results
JP2002203901A (ja) * 2000-12-27 2002-07-19 Toshiba Microelectronics Corp フューズ回路
US6943575B2 (en) * 2002-07-29 2005-09-13 Micron Technology, Inc. Method, circuit and system for determining burn-in reliability from wafer level burn-in
JP4480649B2 (ja) * 2005-09-05 2010-06-16 富士通マイクロエレクトロニクス株式会社 ヒューズ素子及びその切断方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2505285C3 (de) * 1975-02-07 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Schaltungsanordnung zum Einstellen der Information bei einem programmierbaren ECL-Festwertspeicher
US4250570B1 (en) * 1976-07-15 1996-01-02 Intel Corp Redundant memory circuit
JPS5764392A (en) * 1980-10-03 1982-04-19 Mitsubishi Electric Corp Semiconductor integrated circuit
US4432070A (en) * 1981-09-30 1984-02-14 Monolithic Memories, Incorporated High speed PROM device
US4417154A (en) * 1982-02-08 1983-11-22 Motorola, Inc. Circuit for applying a high voltage signal to a fusible link
JPS58164099A (ja) * 1982-03-25 1983-09-28 Toshiba Corp 半導体メモリ−
JPS60103594A (ja) * 1983-11-10 1985-06-07 Fujitsu Ltd 情報記憶回路

Also Published As

Publication number Publication date
EP0159928A3 (en) 1987-10-07
EP0159928A2 (en) 1985-10-30
JPS60201598A (ja) 1985-10-12
KR900000171B1 (ko) 1990-01-23
EP0159928B1 (en) 1990-11-28
KR850006785A (ko) 1985-10-16
US4707806A (en) 1987-11-17
JPH0222479B2 (https=) 1990-05-18

Similar Documents

Publication Publication Date Title
DE3580690D1 (de) Integrierte halbleiterschaltungsanordnung mit einer datenspeicherschaltung eines schmelzsicherungstyps.
EP0252325A3 (en) Semiconductor device having a fuse circuit and a detecting circuit for detecting the states of the fuses in the fuse circuit
JPS5538016A (en) Semiconductor memory device
KR940010509A (ko) 반도체 메모리 소자의 어드레스 전이 검출 회로
KR860002148A (ko) 반도체 집적회로 장치
IT1271540B (it) Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore
EP0608967A3 (en) Memory devices
KR930008868A (ko) 시험회로를 내장한 기억용 반도체 집적회로
EP0089891A3 (en) Identification of repaired integrated circuits
KR930020447A (ko) 반도체 메모리 장치의 비트라인 프리차아지방식
EP0331113A3 (en) Semiconductor memory device
KR960025791A (ko) 센스 앰프회로
EP0547888A3 (https=)
DE69028169D1 (de) Null-Ruheleistung aufweisende, strahlungsfeste Speicherredundanzschaltung
DE69128223D1 (de) Halbleiterspeicher mit einer Flagge zum Prüfmodusanzeigen
JPS648580A (en) Memory device for electronic equipment
KR880000859A (ko) 마이크로 프로세서
KR890015285A (ko) 반도체집적회로의 오동작방지회로
KR870011617A (ko) 반도체 집적회로 장치
KR950026114A (ko) 반도체 소자의 데이타 출력버퍼
KR900003901A (ko) 프로그램 가능한 반도체 메모리 회로
JPS57203294A (en) Semiconductor integrated circuit
EP0395071A3 (en) Semiconductor integrated circuit with improved i/o structure
JPS56156992A (en) Driving circuit for semiconductor storage device
KR960035660A (ko) 반도체 메모리장치의 체크방법

Legal Events

Date Code Title Description
8364 No opposition during term of opposition