DE3545355C2 - Lithium-Tantalat-Einkristallwafer - Google Patents
Lithium-Tantalat-EinkristallwaferInfo
- Publication number
- DE3545355C2 DE3545355C2 DE3545355A DE3545355A DE3545355C2 DE 3545355 C2 DE3545355 C2 DE 3545355C2 DE 3545355 A DE3545355 A DE 3545355A DE 3545355 A DE3545355 A DE 3545355A DE 3545355 C2 DE3545355 C2 DE 3545355C2
- Authority
- DE
- Germany
- Prior art keywords
- wafer
- single crystal
- lithium tantalate
- crystal wafer
- saw
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 title claims description 22
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 title claims description 13
- 235000012431 wafers Nutrition 0.000 description 34
- 238000010897 surface acoustic wave method Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- AWJDQCINSGRBDJ-UHFFFAOYSA-N [Li].[Ta] Chemical compound [Li].[Ta] AWJDQCINSGRBDJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
- H03H9/02968—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with optical devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59280820A JPS61151098A (ja) | 1984-12-24 | 1984-12-24 | タンタル酸リチウム単結晶ウエ−ハ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3545355A1 DE3545355A1 (de) | 1986-07-31 |
| DE3545355C2 true DE3545355C2 (de) | 1994-09-29 |
Family
ID=17630432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3545355A Expired - Fee Related DE3545355C2 (de) | 1984-12-24 | 1985-12-20 | Lithium-Tantalat-Einkristallwafer |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US4776917A (enExample) |
| JP (1) | JPS61151098A (enExample) |
| DE (1) | DE3545355C2 (enExample) |
| FR (1) | FR2575191B1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10237308A1 (de) * | 2002-08-14 | 2004-03-04 | Linos Photonics Gmbh & Co. Kg | Elektrooptisches Element |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61151098A (ja) * | 1984-12-24 | 1986-07-09 | Shin Etsu Chem Co Ltd | タンタル酸リチウム単結晶ウエ−ハ |
| US5746823A (en) * | 1995-09-08 | 1998-05-05 | University Of Puerto Rico | Organic crystalline films for optical applications and related methods of fabrication |
| US5835205A (en) * | 1996-02-12 | 1998-11-10 | C3, Inc. | Optical testing system for distinguishing a silicon carbide gemstone from a diamond |
| EP1329744B1 (en) * | 2002-01-10 | 2007-08-15 | Shin-Etsu Chemical Co., Ltd. | Lithium Niobate and Lithium Tantalate Etalons and corresponding producing method |
| EP1693488B1 (en) * | 2003-11-21 | 2013-06-19 | National Institute for Materials Science | Lens and optical electronic device |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3788890A (en) * | 1972-03-03 | 1974-01-29 | Ibm | Method of preparing dislocation-free crystals |
| US3976535A (en) * | 1975-05-27 | 1976-08-24 | Bell Telephone Laboratories, Incorporated | Screening seeds for quartz growth |
| JPS604599B2 (ja) * | 1976-03-17 | 1985-02-05 | 株式会社東芝 | タンタル酸リチウム単結晶の製造方法 |
| JPS52114246A (en) * | 1976-03-22 | 1977-09-24 | Toshiba Corp | Elastic surface wave device |
| JPS5825078B2 (ja) * | 1977-06-24 | 1983-05-25 | 株式会社東芝 | 単結晶の製造方法 |
| JPS5497585A (en) * | 1978-01-19 | 1979-08-01 | Toshiba Corp | Manufacture of syngle crystal |
| SU769415A1 (ru) * | 1978-07-07 | 1980-10-07 | Всесоюзный Ордена Трудового Красного Знамени Научно-Исследовательский Институт Синтеза Минерального Сырья | Способ оценки качества кристаллов |
| US4257825A (en) * | 1978-08-30 | 1981-03-24 | U.S. Philips Corporation | Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers |
| US4379620A (en) * | 1980-03-20 | 1983-04-12 | Keuffel & Esser Company | Light modulator employing electrooptic crystals |
| GB2105953B (en) * | 1981-08-14 | 1985-05-22 | Sony Corp | Methods of and apparatus for coding television signals |
| JPS595560A (ja) * | 1982-07-02 | 1984-01-12 | Citizen Watch Co Ltd | 小形薄形電池の製造方法 |
| JPS5945999A (ja) * | 1982-09-06 | 1984-03-15 | Toshiba Corp | 単結晶引上げ方法 |
| JPS6077192A (ja) * | 1983-09-30 | 1985-05-01 | Fujitsu Ltd | 単結晶の欠陥検出装置 |
| JPS61134111A (ja) * | 1984-12-04 | 1986-06-21 | Shin Etsu Chem Co Ltd | タンタル酸リチウム単結晶ウエ−ハ |
| JPS61151098A (ja) * | 1984-12-24 | 1986-07-09 | Shin Etsu Chem Co Ltd | タンタル酸リチウム単結晶ウエ−ハ |
-
1984
- 1984-12-24 JP JP59280820A patent/JPS61151098A/ja active Granted
-
1985
- 1985-12-20 DE DE3545355A patent/DE3545355C2/de not_active Expired - Fee Related
- 1985-12-24 FR FR858519143A patent/FR2575191B1/fr not_active Expired - Fee Related
-
1987
- 1987-03-04 US US07/022,591 patent/US4776917A/en not_active Expired - Lifetime
-
1988
- 1988-07-19 US US07/221,325 patent/US4898641A/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10237308A1 (de) * | 2002-08-14 | 2004-03-04 | Linos Photonics Gmbh & Co. Kg | Elektrooptisches Element |
| DE10237308B4 (de) * | 2002-08-14 | 2007-01-04 | Linos Photonics Gmbh & Co. Kg | Elektrooptisches Element |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2575191B1 (fr) | 1990-09-28 |
| FR2575191A1 (fr) | 1986-06-27 |
| JPS61151098A (ja) | 1986-07-09 |
| US4898641A (en) | 1990-02-06 |
| JPH0425240B2 (enExample) | 1992-04-30 |
| DE3545355A1 (de) | 1986-07-31 |
| US4776917A (en) | 1988-10-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |