JPS61151098A - タンタル酸リチウム単結晶ウエ−ハ - Google Patents

タンタル酸リチウム単結晶ウエ−ハ

Info

Publication number
JPS61151098A
JPS61151098A JP59280820A JP28082084A JPS61151098A JP S61151098 A JPS61151098 A JP S61151098A JP 59280820 A JP59280820 A JP 59280820A JP 28082084 A JP28082084 A JP 28082084A JP S61151098 A JPS61151098 A JP S61151098A
Authority
JP
Japan
Prior art keywords
lithium tantalate
single crystal
wafer
crystal wafer
saw
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59280820A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425240B2 (enExample
Inventor
Masahiro Ogiwara
荻原　正宏
Shinji Makikawa
新二 牧川
Masaaki Iguchi
雅章 井口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP59280820A priority Critical patent/JPS61151098A/ja
Priority to DE3545355A priority patent/DE3545355C2/de
Priority to FR858519143A priority patent/FR2575191B1/fr
Publication of JPS61151098A publication Critical patent/JPS61151098A/ja
Priority to US07/022,591 priority patent/US4776917A/en
Priority to US07/221,325 priority patent/US4898641A/en
Publication of JPH0425240B2 publication Critical patent/JPH0425240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/0296—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties
    • H03H9/02968—Surface acoustic wave [SAW] devices having both acoustic and non-acoustic properties with optical devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/30—Niobates; Vanadates; Tantalates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP59280820A 1984-12-24 1984-12-24 タンタル酸リチウム単結晶ウエ−ハ Granted JPS61151098A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59280820A JPS61151098A (ja) 1984-12-24 1984-12-24 タンタル酸リチウム単結晶ウエ−ハ
DE3545355A DE3545355C2 (de) 1984-12-24 1985-12-20 Lithium-Tantalat-Einkristallwafer
FR858519143A FR2575191B1 (fr) 1984-12-24 1985-12-24 Pastille monocristalline de tantalate de lithium
US07/022,591 US4776917A (en) 1984-12-24 1987-03-04 Single crystal wafer of lithium tantalate
US07/221,325 US4898641A (en) 1984-12-24 1988-07-19 Single crystal wafer of lithium tantalate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59280820A JPS61151098A (ja) 1984-12-24 1984-12-24 タンタル酸リチウム単結晶ウエ−ハ

Publications (2)

Publication Number Publication Date
JPS61151098A true JPS61151098A (ja) 1986-07-09
JPH0425240B2 JPH0425240B2 (enExample) 1992-04-30

Family

ID=17630432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59280820A Granted JPS61151098A (ja) 1984-12-24 1984-12-24 タンタル酸リチウム単結晶ウエ−ハ

Country Status (4)

Country Link
US (2) US4776917A (enExample)
JP (1) JPS61151098A (enExample)
DE (1) DE3545355C2 (enExample)
FR (1) FR2575191B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61151098A (ja) * 1984-12-24 1986-07-09 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
US5746823A (en) * 1995-09-08 1998-05-05 University Of Puerto Rico Organic crystalline films for optical applications and related methods of fabrication
US5835205A (en) * 1996-02-12 1998-11-10 C3, Inc. Optical testing system for distinguishing a silicon carbide gemstone from a diamond
EP1329744B1 (en) * 2002-01-10 2007-08-15 Shin-Etsu Chemical Co., Ltd. Lithium Niobate and Lithium Tantalate Etalons and corresponding producing method
DE10237308B4 (de) * 2002-08-14 2007-01-04 Linos Photonics Gmbh & Co. Kg Elektrooptisches Element
EP1693488B1 (en) * 2003-11-21 2013-06-19 National Institute for Materials Science Lens and optical electronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829280A (ja) * 1981-08-14 1983-02-21 Sony Corp テレビジヨン信号のコ−デイング方法
JPS595560A (ja) * 1982-07-02 1984-01-12 Citizen Watch Co Ltd 小形薄形電池の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3788890A (en) * 1972-03-03 1974-01-29 Ibm Method of preparing dislocation-free crystals
US3976535A (en) * 1975-05-27 1976-08-24 Bell Telephone Laboratories, Incorporated Screening seeds for quartz growth
JPS604599B2 (ja) * 1976-03-17 1985-02-05 株式会社東芝 タンタル酸リチウム単結晶の製造方法
JPS52114246A (en) * 1976-03-22 1977-09-24 Toshiba Corp Elastic surface wave device
JPS5825078B2 (ja) * 1977-06-24 1983-05-25 株式会社東芝 単結晶の製造方法
JPS5497585A (en) * 1978-01-19 1979-08-01 Toshiba Corp Manufacture of syngle crystal
SU769415A1 (ru) * 1978-07-07 1980-10-07 Всесоюзный Ордена Трудового Красного Знамени Научно-Исследовательский Институт Синтеза Минерального Сырья Способ оценки качества кристаллов
US4257825A (en) * 1978-08-30 1981-03-24 U.S. Philips Corporation Method of manufacturing semiconductor devices having improvements in device reliability by thermally treating selectively implanted test figures in wafers
US4379620A (en) * 1980-03-20 1983-04-12 Keuffel & Esser Company Light modulator employing electrooptic crystals
JPS5945999A (ja) * 1982-09-06 1984-03-15 Toshiba Corp 単結晶引上げ方法
JPS6077192A (ja) * 1983-09-30 1985-05-01 Fujitsu Ltd 単結晶の欠陥検出装置
JPS61134111A (ja) * 1984-12-04 1986-06-21 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ
JPS61151098A (ja) * 1984-12-24 1986-07-09 Shin Etsu Chem Co Ltd タンタル酸リチウム単結晶ウエ−ハ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5829280A (ja) * 1981-08-14 1983-02-21 Sony Corp テレビジヨン信号のコ−デイング方法
JPS595560A (ja) * 1982-07-02 1984-01-12 Citizen Watch Co Ltd 小形薄形電池の製造方法

Also Published As

Publication number Publication date
DE3545355C2 (de) 1994-09-29
FR2575191B1 (fr) 1990-09-28
FR2575191A1 (fr) 1986-06-27
US4898641A (en) 1990-02-06
JPH0425240B2 (enExample) 1992-04-30
DE3545355A1 (de) 1986-07-31
US4776917A (en) 1988-10-11

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees