DE3485048D1 - Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild. - Google Patents

Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild.

Info

Publication number
DE3485048D1
DE3485048D1 DE8484112439T DE3485048T DE3485048D1 DE 3485048 D1 DE3485048 D1 DE 3485048D1 DE 8484112439 T DE8484112439 T DE 8484112439T DE 3485048 T DE3485048 T DE 3485048T DE 3485048 D1 DE3485048 D1 DE 3485048D1
Authority
DE
Germany
Prior art keywords
sensitive
deep
resistant
light
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484112439T
Other languages
English (en)
Inventor
F R Hopf
C E Osuch
M J Mcfarland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant Finance BVI Ltd
Original Assignee
Hoechst Celanese Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corp filed Critical Hoechst Celanese Corp
Application granted granted Critical
Publication of DE3485048D1 publication Critical patent/DE3485048D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
DE8484112439T 1983-11-01 1984-10-16 Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild. Expired - Lifetime DE3485048D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54781583A 1983-11-01 1983-11-01

Publications (1)

Publication Number Publication Date
DE3485048D1 true DE3485048D1 (de) 1991-10-17

Family

ID=24186245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484112439T Expired - Lifetime DE3485048D1 (de) 1983-11-01 1984-10-16 Tief uv-empfindliche positive photolackzusammensetzung, lichtempfindliches element und dasselbe enthaltendes gegen hitze widerstandsfaehiges photochemisches bild.

Country Status (5)

Country Link
EP (1) EP0140273B1 (de)
JP (1) JPH0623842B2 (de)
KR (1) KR870000752B1 (de)
CA (1) CA1279218C (de)
DE (1) DE3485048D1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4524121A (en) * 1983-11-21 1985-06-18 Rohm And Haas Company Positive photoresists containing preformed polyglutarimide polymer
CA1254432A (en) * 1984-12-28 1989-05-23 Conrad G. Houle High-temperature resistant, selectively developable positive-working resist
CA1255142A (en) * 1985-03-11 1989-06-06 Edward C. Fredericks Method and composition of matter for improving conductor resolution in microelectronic circuits
US4837124A (en) * 1986-02-24 1989-06-06 Hoechst Celanese Corporation High resolution photoresist of imide containing polymers
JPS6336240A (ja) * 1986-07-28 1988-02-16 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン レジスト構造の作成方法
JPH01124849A (ja) * 1986-08-08 1989-05-17 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JPS63167351A (ja) * 1986-12-22 1988-07-11 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン フォトレジスト組成物
US4927956A (en) * 1987-09-16 1990-05-22 Hoechst Celanese Corporation 3,5-disubstituted-4-acetoxystyrene and process for its production
US5462840A (en) * 1987-09-16 1995-10-31 Hoechst Celanese Corporation Use of poly(35-disubstituted 4-hydroxystyrene/N-substituted maleimide for forming a negative image
EP0350498A1 (de) * 1987-12-23 1990-01-17 Hoechst Celanese Corporation Photoresist-gemisch, das ein mischpolymer von maleimid und einem vinyläther oder -ester enthält
JP2613789B2 (ja) * 1988-05-12 1997-05-28 富士写真フイルム株式会社 感光性平版印刷版
JP2598977B2 (ja) * 1988-09-14 1997-04-09 富士写真フイルム株式会社 感光性組成物
US5342727A (en) * 1988-10-21 1994-08-30 Hoechst Celanese Corp. Copolymers of 4-hydroxystyrene and alkyl substituted-4-hydroxystyrene in admixture with a photosensitizer to form a photosensitive composition
DE3837500A1 (de) * 1988-11-04 1990-05-23 Hoechst Ag Neue, strahlungsempfindliche verbindungen, hiermit hergestelltes strahlungsempfindliches gemisch und aufzeichnungsmaterial
CA2023423A1 (en) * 1989-09-05 1991-03-06 Christopher E. Osuch Transparent dissolution rate modifiers for photoresists
CA2033403A1 (en) * 1990-01-26 1991-07-27 Michael J. Mcfarland Photoresist containing aliphatic di- and tri-esters of aliphatic and aromatic di-and tri-acids and alcohols
JP3203995B2 (ja) * 1993-12-24 2001-09-04 ジェイエスアール株式会社 感放射線性樹脂組成物
WO1996024621A1 (de) * 1995-02-06 1996-08-15 Siemens Aktiengesellschaft Polymere für strahlungsempfindliche lacke
DE69839323T2 (de) 1997-12-09 2009-04-09 National Institute Of Advanced Industrial Science And Technology Via Keto-Enol-Tautomerie auf Stimuli reagierendes Polymer
JP4586298B2 (ja) * 2001-05-14 2010-11-24 Ｊｓｒ株式会社 脂環式炭化水素骨格含有化合物及び脂環式炭化水素骨格含有重合体並びに感放射線性樹脂組成物
JP5008838B2 (ja) * 2004-07-30 2012-08-22 東京応化工業株式会社 高分子化合物、レジスト組成物およびレジストパターン形成方法
JP5725301B2 (ja) 2009-08-24 2015-05-27 日産化学工業株式会社 マイクロレンズ用感光性樹脂組成物
WO2011030688A1 (ja) 2009-09-14 2011-03-17 日産化学工業株式会社 共重合体を含有する感光性樹脂組成物
CN103229101B (zh) 2010-11-30 2017-05-10 日产化学工业株式会社 微透镜用感光性树脂组合物
JP5867735B2 (ja) 2011-01-31 2016-02-24 日産化学工業株式会社 マイクロレンズ形成用感光性樹脂組成物
CN103304813B (zh) 2013-06-06 2015-09-23 北京京东方光电科技有限公司 一种固化树脂、间隔物剂、滤光片及它们的制备方法、显示器件
CN103319713B (zh) * 2013-06-06 2015-11-25 北京京东方光电科技有限公司 一种固化树脂、黑色光阻剂、滤光片及它们的制备方法、显示器件
CN103304811B (zh) * 2013-06-06 2015-12-02 北京京东方光电科技有限公司 一种固化树脂、蓝色光阻剂、彩色滤光片及它们的制备方法、彩色显示器件
US10042259B2 (en) * 2016-10-31 2018-08-07 Rohm And Haas Electronic Materials Llc Topcoat compositions and pattern-forming methods
TWI784272B (zh) * 2019-05-31 2022-11-21 美商羅門哈斯電子材料有限公司 抗蝕劑組成物、其製造方法及包含其的製品

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2349948A1 (de) * 1972-10-06 1974-05-02 Agency Ind Science Techn Neue photopolymere
DE2462101A1 (de) * 1974-08-02 1976-04-29 Siemens Ag Verfahren zur herstellung strahlungsempfindlicher, loeslicher polymerer verbindungen
EP0021019B1 (de) * 1979-05-18 1984-10-17 Ciba-Geigy Ag Lichtvernetzbare Copolymere, sie enthaltendes lichtempfindliches Aufzeichnungsmaterial, seine Verwendung zur Herstellung photographischer Abbildungen und Verfahren zur Herstellung von photographischen Abbildungen
US4544621A (en) * 1982-05-19 1985-10-01 Ciba Geigy Corporation Photocrosslinkable water-soluble polymers, containing maleimidyl and quaternary ammonium groups process for their preparation and use thereof

Also Published As

Publication number Publication date
EP0140273A3 (en) 1987-06-24
JPH0623842B2 (ja) 1994-03-30
KR850003990A (ko) 1985-06-29
KR870000752B1 (ko) 1987-04-13
EP0140273B1 (de) 1991-09-11
EP0140273A2 (de) 1985-05-08
JPS60115932A (ja) 1985-06-22
CA1279218C (en) 1991-01-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: CLARIANT FINANCE (BVI) LTD., ROAD TOWN, TORTOLA, V

8328 Change in the person/name/address of the agent

Free format text: SPOTT WEINMILLER & PARTNER, 80336 MUENCHEN