DE3485039D1 - Planare verkettete schaltung fuer integrierte schaltkreise. - Google Patents

Planare verkettete schaltung fuer integrierte schaltkreise.

Info

Publication number
DE3485039D1
DE3485039D1 DE8484401224T DE3485039T DE3485039D1 DE 3485039 D1 DE3485039 D1 DE 3485039D1 DE 8484401224 T DE8484401224 T DE 8484401224T DE 3485039 T DE3485039 T DE 3485039T DE 3485039 D1 DE3485039 D1 DE 3485039D1
Authority
DE
Germany
Prior art keywords
layer
metallization
metal
insulating layer
opened
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484401224T
Other languages
English (en)
Inventor
Andrew L Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Digital Equipment Corp
Original Assignee
Digital Equipment Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Digital Equipment Corp filed Critical Digital Equipment Corp
Application granted granted Critical
Publication of DE3485039D1 publication Critical patent/DE3485039D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8484401224T 1983-06-16 1984-06-14 Planare verkettete schaltung fuer integrierte schaltkreise. Expired - Fee Related DE3485039D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/505,046 US4617193A (en) 1983-06-16 1983-06-16 Planar interconnect for integrated circuits

Publications (1)

Publication Number Publication Date
DE3485039D1 true DE3485039D1 (de) 1991-10-17

Family

ID=24008776

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484401224T Expired - Fee Related DE3485039D1 (de) 1983-06-16 1984-06-14 Planare verkettete schaltung fuer integrierte schaltkreise.

Country Status (6)

Country Link
US (1) US4617193A (de)
EP (1) EP0129476B1 (de)
JP (1) JPS6074456A (de)
AT (1) ATE67346T1 (de)
CA (1) CA1220562A (de)
DE (1) DE3485039D1 (de)

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JPS60116167A (ja) * 1983-11-29 1985-06-22 Toshiba Corp 半導体記憶装置及びその製造方法
US4584761A (en) * 1984-05-15 1986-04-29 Digital Equipment Corporation Integrated circuit chip processing techniques and integrated chip produced thereby
US4996584A (en) * 1985-01-31 1991-02-26 Gould, Inc. Thin-film electrical connections for integrated circuits
FR2583220B1 (fr) * 1985-06-11 1987-08-07 Thomson Csf Procede de realisation d'au moins deux metallisations d'un composant semi-conducteur, recouvertes d'une couche de dielectrique et composant obtenu par ce dielectrique
JPS6290950A (ja) * 1985-10-16 1987-04-25 Mitsubishi Electric Corp 半導体装置
JPS62156868A (ja) * 1985-12-28 1987-07-11 Nec Corp 半導体装置の製造方法
US4816422A (en) * 1986-12-29 1989-03-28 General Electric Company Fabrication of large power semiconductor composite by wafer interconnection of individual devices
JP2584986B2 (ja) * 1987-03-10 1997-02-26 三菱電機株式会社 半導体装置の配線構造
JPS63283040A (ja) * 1987-05-15 1988-11-18 Toshiba Corp 半導体装置
JPS6450443A (en) * 1987-08-20 1989-02-27 Toshiba Corp Semiconductor device
US5055423A (en) * 1987-12-28 1991-10-08 Texas Instruments Incorporated Planarized selective tungsten metallization system
US4897676A (en) * 1988-01-05 1990-01-30 Max Levy Autograph, Inc. High-density circuit and method of its manufacture
US5488394A (en) * 1988-01-05 1996-01-30 Max Levy Autograph, Inc. Print head and method of making same
US5162191A (en) * 1988-01-05 1992-11-10 Max Levy Autograph, Inc. High-density circuit and method of its manufacture
US5266835A (en) * 1988-02-02 1993-11-30 National Semiconductor Corporation Semiconductor structure having a barrier layer disposed within openings of a dielectric layer
US5070392A (en) * 1988-03-18 1991-12-03 Digital Equipment Corporation Integrated circuit having laser-alterable metallization layer
EP0338817B1 (de) * 1988-04-22 1999-09-08 Fujitsu Limited Integrierte Halbleiterschaltungsanordnung vom "Masterslice"-Typ
US4822753A (en) * 1988-05-09 1989-04-18 Motorola, Inc. Method for making a w/tin contact
JPH0244753A (ja) * 1988-08-05 1990-02-14 Toshiba Corp 半導体装置の製造方法
US4983543A (en) * 1988-09-07 1991-01-08 Fujitsu Limited Method of manufacturing a semiconductor integrated circuit having an interconnection wire embedded in a protective layer covering the semiconductor integrated circuit
CA2004281A1 (en) * 1988-12-09 1990-06-09 Nun-Sian Tsai Etching of integrated-circuit device metallization and resulting device
US4933743A (en) * 1989-03-11 1990-06-12 Fairchild Semiconductor Corporation High performance interconnect system for an integrated circuit
US4980034A (en) * 1989-04-04 1990-12-25 Massachusetts Institute Of Technology High-density, multi-level interconnects, flex circuits, and tape for TAB
US5106461A (en) * 1989-04-04 1992-04-21 Massachusetts Institute Of Technology High-density, multi-level interconnects, flex circuits, and tape for tab
US5306942A (en) * 1989-10-11 1994-04-26 Nippondenso Co., Ltd. Semiconductor device having a shield which is maintained at a reference potential
JP3078821B2 (ja) * 1990-05-30 2000-08-21 豊田合成株式会社 半導体のドライエッチング方法
JPH04196552A (ja) * 1990-11-28 1992-07-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5130768A (en) * 1990-12-07 1992-07-14 Digital Equipment Corporation Compact, high-density packaging apparatus for high performance semiconductor devices
US5187119A (en) * 1991-02-11 1993-02-16 The Boeing Company Multichip module and integrated circuit substrates having planarized patterned surfaces
JPH05152293A (ja) * 1991-04-30 1993-06-18 Sgs Thomson Microelectron Inc 段差付き壁相互接続体及びゲートの製造方法
US5372969A (en) * 1991-12-31 1994-12-13 Texas Instruments Incorporated Low-RC multi-level interconnect technology for high-performance integrated circuits
US5298792A (en) * 1992-02-03 1994-03-29 Micron Technology, Inc. Integrated circuit device with bi-level contact landing pads
US5485019A (en) * 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
USRE40790E1 (en) 1992-06-23 2009-06-23 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5229326A (en) * 1992-06-23 1993-07-20 Micron Technology, Inc. Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
US5244837A (en) * 1993-03-19 1993-09-14 Micron Semiconductor, Inc. Semiconductor electrical interconnection methods
US5366911A (en) * 1994-05-11 1994-11-22 United Microelectronics Corporation VLSI process with global planarization
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
JP2616706B2 (ja) * 1994-08-04 1997-06-04 日本電気株式会社 半導体装置およびその製造方法
JP2785768B2 (ja) * 1995-09-14 1998-08-13 日本電気株式会社 半導体装置の製造方法
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
US5814887A (en) * 1996-01-26 1998-09-29 Nippon Steel Corporation Semiconductor device and production method thereof
JP3565983B2 (ja) * 1996-04-12 2004-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW305069B (en) * 1996-05-06 1997-05-11 United Microelectronics Corp The IC pad structure and its manufacturing method
JPH10150037A (ja) * 1996-11-18 1998-06-02 Toshiba Corp 半導体装置及びその製造方法
US5755891A (en) * 1997-01-24 1998-05-26 Taiwan Semiconductor Manufacturing Company Ltd. Method for post-etching of metal patterns
DE19716102C2 (de) * 1997-04-17 2003-09-25 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mehreren Bauelementen und Verfahren zu deren Herstellung
TW407342B (en) * 1998-06-17 2000-10-01 United Microelectronics Corp Planarization method of damascene structure
JP3147095B2 (ja) * 1998-07-24 2001-03-19 日本電気株式会社 半導体記憶装置
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US6156485A (en) * 1999-01-19 2000-12-05 Taiwan Semiconductor Manufacturing Company Ltd. Film scheme to solve high aspect ratio metal etch masking layer selectivity and improve photo I-line PR resolution capability in quarter-micron technology
JP3465617B2 (ja) 1999-02-15 2003-11-10 カシオ計算機株式会社 半導体装置
US6747307B1 (en) * 2000-04-04 2004-06-08 Koninklijke Philips Electronics N.V. Combined transistor-capacitor structure in deep sub-micron CMOS for power amplifiers
US6847066B2 (en) 2000-08-11 2005-01-25 Oki Electric Industry Co., Ltd. Semiconductor device
JP3939504B2 (ja) 2001-04-17 2007-07-04 カシオ計算機株式会社 半導体装置並びにその製造方法および実装構造
JP2006024698A (ja) * 2004-07-07 2006-01-26 Toshiba Corp 半導体装置及びその製造方法
US7576902B2 (en) * 2006-09-06 2009-08-18 Texas Instruments Incorporated Spatial light modulator mirror metal having enhanced reflectivity
US7800170B1 (en) 2009-07-31 2010-09-21 Alpha & Omega Semiconductor, Inc. Power MOSFET device with tungsten spacer in contact hole and method
US9202713B2 (en) * 2010-07-26 2015-12-01 Stats Chippac, Ltd. Semiconductor device and method of forming RDL over contact pad with high alignment tolerance or reduced interconnect pitch
CN104659015B (zh) * 2015-02-02 2017-02-22 矽力杰半导体技术(杭州)有限公司 一种具有重布线层的半导体结构及其制造方法
US10262938B2 (en) * 2017-08-31 2019-04-16 Vanguard International Semiconductor Corporation Semiconductor structure having conductive layer overlapping field oxide

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* Cited by examiner, † Cited by third party
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US3988214A (en) * 1968-06-17 1976-10-26 Nippon Electric Company, Ltd. Method of fabricating a semiconductor device
US3961414A (en) * 1972-06-09 1976-06-08 International Business Machines Corporation Semiconductor structure having metallization inlaid in insulating layers and method for making same
US3985597A (en) * 1975-05-01 1976-10-12 International Business Machines Corporation Process for forming passivated metal interconnection system with a planar surface
JPS5811512B2 (ja) * 1979-07-25 1983-03-03 超エル・エス・アイ技術研究組合 パタ−ン形成方法
JPS5690525A (en) * 1979-11-28 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device
JPS56126944A (en) * 1980-03-12 1981-10-05 Fujitsu Ltd Production of semiconductor device
US4367119A (en) * 1980-08-18 1983-01-04 International Business Machines Corporation Planar multi-level metal process with built-in etch stop
JPS58155A (ja) * 1981-06-25 1983-01-05 Nec Corp 半導体装置の製造方法
US4457820A (en) * 1981-12-24 1984-07-03 International Business Machines Corporation Two step plasma etching
JPS5916978A (ja) * 1982-07-20 1984-01-28 Tokyo Denshi Kagaku Kabushiki 金属被膜の選択的エツチング方法
US4430153A (en) * 1983-06-30 1984-02-07 International Business Machines Corporation Method of forming an RIE etch barrier by in situ conversion of a silicon containing alkyl polyamide/polyimide
US4451326A (en) * 1983-09-07 1984-05-29 Advanced Micro Devices, Inc. Method for interconnecting metallic layers
US4460435A (en) * 1983-12-19 1984-07-17 Rca Corporation Patterning of submicrometer metal silicide structures
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer

Also Published As

Publication number Publication date
JPS6074456A (ja) 1985-04-26
ATE67346T1 (de) 1991-09-15
EP0129476B1 (de) 1991-09-11
CA1220562A (en) 1987-04-14
US4617193A (en) 1986-10-14
EP0129476A2 (de) 1984-12-27
EP0129476A3 (en) 1986-12-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee