DE3413885A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3413885A1
DE3413885A1 DE19843413885 DE3413885A DE3413885A1 DE 3413885 A1 DE3413885 A1 DE 3413885A1 DE 19843413885 DE19843413885 DE 19843413885 DE 3413885 A DE3413885 A DE 3413885A DE 3413885 A1 DE3413885 A1 DE 3413885A1
Authority
DE
Germany
Prior art keywords
semiconductor device
layer
alloy layer
metal layer
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843413885
Other languages
German (de)
English (en)
Other versions
DE3413885C2 (enExample
Inventor
Hiroyuki Himeji Hyogo Baba
Toshio Hyogo Tetsuya
Osamu Tatsuno Hyogo Usuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3413885A1 publication Critical patent/DE3413885A1/de
Application granted granted Critical
Publication of DE3413885C2 publication Critical patent/DE3413885C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/417—Bonding materials between chips and die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Die Bonding (AREA)
DE19843413885 1983-04-16 1984-04-12 Halbleitervorrichtung Granted DE3413885A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58066340A JPS59193036A (ja) 1983-04-16 1983-04-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3413885A1 true DE3413885A1 (de) 1984-10-25
DE3413885C2 DE3413885C2 (enExample) 1990-02-22

Family

ID=13313027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843413885 Granted DE3413885A1 (de) 1983-04-16 1984-04-12 Halbleitervorrichtung

Country Status (3)

Country Link
JP (1) JPS59193036A (enExample)
DE (1) DE3413885A1 (enExample)
GB (1) GB2138633B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
JPS61156823A (ja) * 1984-12-28 1986-07-16 Toshiba Corp 半導体装置
JPH0783034B2 (ja) * 1986-03-29 1995-09-06 株式会社東芝 半導体装置
JPS63110765A (ja) * 1986-10-29 1988-05-16 Sumitomo Metal Mining Co Ltd Ｉｃ用リ−ドフレ−ム
US7776452B2 (en) 2004-08-10 2010-08-17 Neomax Materials Co. Ltd. Heat sink member and method of manufacturing the same
CA2609252C (en) 2005-05-23 2012-01-10 Neomax Materials Co., Ltd. Cu-mo substrate and method for producing same
US20100247955A1 (en) 2006-09-29 2010-09-30 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same
JP2008221290A (ja) * 2007-03-14 2008-09-25 Toshiba Corp 接合体および接合方法
JP5253794B2 (ja) * 2006-12-25 2013-07-31 山陽特殊製鋼株式会社 鉛フリー接合用材料およびその製造方法
JP5758242B2 (ja) * 2011-09-06 2015-08-05 山陽特殊製鋼株式会社 鉛フリー接合材料
JP5744080B2 (ja) * 2013-02-04 2015-07-01 株式会社東芝 接合体および半導体装置
JP2015056646A (ja) * 2013-09-13 2015-03-23 株式会社東芝 半導体装置及び半導体モジュール

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298387B (de) * 1964-02-06 1969-06-26 Semikron Gleichrichterbau Halbleiter-Anordnung
DE2229070A1 (de) * 1971-06-17 1973-01-11 Philips Nv Verfahren zum befestigen eines halbleiterkoerpers an einem substrat
DE2314731A1 (de) * 1972-03-27 1973-10-11 Signetics Corp Halbleiterbauteil mit vorspruengen und verfahren zur herstellung desselben
DE2930789A1 (de) * 1978-07-28 1980-02-07 Tokyo Shibaura Electric Co Halbleitervorrichtung
JPS5519805A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519806A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB907734A (en) * 1959-06-06 1962-10-10 Teizo Takikawa Method of soldering silicon or silicon alloy
DE2514922C2 (de) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gegen thermische Wechselbelastung beständiges Halbleiterbauelement
JPS5521106A (en) * 1978-07-31 1980-02-15 Nec Home Electronics Ltd Method of forming ohmic electrode
JPS55107238A (en) * 1979-02-09 1980-08-16 Hitachi Ltd Semiconductor device and method of manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1298387B (de) * 1964-02-06 1969-06-26 Semikron Gleichrichterbau Halbleiter-Anordnung
DE2229070A1 (de) * 1971-06-17 1973-01-11 Philips Nv Verfahren zum befestigen eines halbleiterkoerpers an einem substrat
DE2314731A1 (de) * 1972-03-27 1973-10-11 Signetics Corp Halbleiterbauteil mit vorspruengen und verfahren zur herstellung desselben
DE2930789A1 (de) * 1978-07-28 1980-02-07 Tokyo Shibaura Electric Co Halbleitervorrichtung
JPS5519805A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device
JPS5519806A (en) * 1978-07-28 1980-02-12 Toshiba Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446780A1 (de) * 1984-12-21 1986-07-03 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und verbindungswerkstoff zum metallischen verbinden von bauteilen

Also Published As

Publication number Publication date
GB2138633B (en) 1986-10-01
JPH0226376B2 (enExample) 1990-06-08
JPS59193036A (ja) 1984-11-01
DE3413885C2 (enExample) 1990-02-22
GB2138633A (en) 1984-10-24

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee