DE3320424A1 - Halbleiterelement - Google Patents

Halbleiterelement

Info

Publication number
DE3320424A1
DE3320424A1 DE19833320424 DE3320424A DE3320424A1 DE 3320424 A1 DE3320424 A1 DE 3320424A1 DE 19833320424 DE19833320424 DE 19833320424 DE 3320424 A DE3320424 A DE 3320424A DE 3320424 A1 DE3320424 A1 DE 3320424A1
Authority
DE
Germany
Prior art keywords
impurity diffusion
insulating film
film
oxide film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833320424
Other languages
German (de)
English (en)
Other versions
DE3320424C2 (https=
Inventor
Ryo Ando
Hirokazu Miyoshi
Moriyoshi Nakajima
Akira Nishimoto
Hironari Itami Hyogo Takahashi
Masaharu Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3320424A1 publication Critical patent/DE3320424A1/de
Application granted granted Critical
Publication of DE3320424C2 publication Critical patent/DE3320424C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
DE19833320424 1982-06-09 1983-06-06 Halbleiterelement Granted DE3320424A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57100252A JPS58216439A (ja) 1982-06-09 1982-06-09 半導体装置

Publications (2)

Publication Number Publication Date
DE3320424A1 true DE3320424A1 (de) 1983-12-15
DE3320424C2 DE3320424C2 (https=) 1990-10-31

Family

ID=14269027

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833320424 Granted DE3320424A1 (de) 1982-06-09 1983-06-06 Halbleiterelement

Country Status (2)

Country Link
JP (1) JPS58216439A (https=)
DE (1) DE3320424A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817918A1 (de) * 1987-05-27 1988-12-08 Mitsubishi Electric Corp Halbleiterspeichereinrichtung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5543786B2 (ja) * 2008-01-09 2014-07-09 ローム株式会社 半導体装置及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
US3967364A (en) * 1973-10-12 1976-07-06 Hitachi, Ltd. Method of manufacturing semiconductor devices
US4151607A (en) * 1976-07-05 1979-04-24 Hitachi, Ltd. Semiconductor memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
US3967364A (en) * 1973-10-12 1976-07-06 Hitachi, Ltd. Method of manufacturing semiconductor devices
US4151607A (en) * 1976-07-05 1979-04-24 Hitachi, Ltd. Semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817918A1 (de) * 1987-05-27 1988-12-08 Mitsubishi Electric Corp Halbleiterspeichereinrichtung

Also Published As

Publication number Publication date
DE3320424C2 (https=) 1990-10-31
JPS58216439A (ja) 1983-12-16

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8363 Opposition against the patent
8325 Change of the main classification

Ipc: H01L 21/78

8365 Fully valid after opposition proceedings
8320 Willingness to grant licences declared (paragraph 23)