JPS58216439A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58216439A
JPS58216439A JP57100252A JP10025282A JPS58216439A JP S58216439 A JPS58216439 A JP S58216439A JP 57100252 A JP57100252 A JP 57100252A JP 10025282 A JP10025282 A JP 10025282A JP S58216439 A JPS58216439 A JP S58216439A
Authority
JP
Japan
Prior art keywords
region
film
oxide film
impurity
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57100252A
Other languages
English (en)
Japanese (ja)
Inventor
Masaharu Tokuda
徳田 正治
Hirokazu Miyoshi
三好 寛和
Akira Nishimoto
西本 章
Akira Ando
安東 亮
Moriyoshi Nakajima
盛義 中島
Hiroshige Takahashi
高橋 広成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP57100252A priority Critical patent/JPS58216439A/ja
Priority to DE19833320424 priority patent/DE3320424A1/de
Publication of JPS58216439A publication Critical patent/JPS58216439A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Dicing (AREA)
JP57100252A 1982-06-09 1982-06-09 半導体装置 Pending JPS58216439A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP57100252A JPS58216439A (ja) 1982-06-09 1982-06-09 半導体装置
DE19833320424 DE3320424A1 (de) 1982-06-09 1983-06-06 Halbleiterelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57100252A JPS58216439A (ja) 1982-06-09 1982-06-09 半導体装置

Publications (1)

Publication Number Publication Date
JPS58216439A true JPS58216439A (ja) 1983-12-16

Family

ID=14269027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57100252A Pending JPS58216439A (ja) 1982-06-09 1982-06-09 半導体装置

Country Status (2)

Country Link
JP (1) JPS58216439A (https=)
DE (1) DE3320424A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009088081A1 (ja) * 2008-01-09 2011-05-26 ローム株式会社 半導体装置及びその製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817918A1 (de) * 1987-05-27 1988-12-08 Mitsubishi Electric Corp Halbleiterspeichereinrichtung

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3967310A (en) * 1968-10-09 1976-06-29 Hitachi, Ltd. Semiconductor device having controlled surface charges by passivation films formed thereon
JPS5321989B2 (https=) * 1973-10-12 1978-07-06
NL176415C (nl) * 1976-07-05 1985-04-01 Hitachi Ltd Halfgeleidergeheugeninrichting omvattende een matrix van halfgeleidergeheugencellen, die bestaan uit een veldeffekttransistor en een opslagcapaciteit.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009088081A1 (ja) * 2008-01-09 2011-05-26 ローム株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
DE3320424C2 (https=) 1990-10-31
DE3320424A1 (de) 1983-12-15

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