DE3217896A1 - Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung - Google Patents

Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung

Info

Publication number
DE3217896A1
DE3217896A1 DE19823217896 DE3217896A DE3217896A1 DE 3217896 A1 DE3217896 A1 DE 3217896A1 DE 19823217896 DE19823217896 DE 19823217896 DE 3217896 A DE3217896 A DE 3217896A DE 3217896 A1 DE3217896 A1 DE 3217896A1
Authority
DE
Germany
Prior art keywords
film
capacitor
layer
semiconductor
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19823217896
Other languages
German (de)
English (en)
Inventor
Masamichi Ishihara
Takeshi Kajimoto
Masanori Tazunoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3217896A1 publication Critical patent/DE3217896A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE19823217896 1981-05-13 1982-05-12 Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung Withdrawn DE3217896A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (1)

Publication Number Publication Date
DE3217896A1 true DE3217896A1 (de) 1983-05-26

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823217896 Withdrawn DE3217896A1 (de) 1981-05-13 1982-05-12 Halbleiterspeichervorrichtung und verfahren zu ihrer herstellung

Country Status (6)

Country Link
JP (1) JPS57186354A (cs)
KR (1) KR840000082A (cs)
DE (1) DE3217896A1 (cs)
FR (1) FR2506058A1 (cs)
GB (1) GB2098397A (cs)
IT (1) IT1152129B (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3314002A1 (de) * 1982-04-19 1983-11-03 Hitachi, Ltd., Tokyo Taktgeber und damit arbeitender dynamischer speicher

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体記憶装置
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2646245A1 (de) * 1975-10-28 1977-05-05 Motorola Inc Speicherschaltung
DE2633558C2 (de) * 1976-07-26 1978-08-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Speicherbaustein
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device
JPS5559759A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DE-Z: ntz, Bd. 32, No.6, 1979, S.375-381 *
US-Z: IEEE-ED 24, No.5, 1977, S.584-586 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3314002A1 (de) * 1982-04-19 1983-11-03 Hitachi, Ltd., Tokyo Taktgeber und damit arbeitender dynamischer speicher

Also Published As

Publication number Publication date
JPS57186354A (en) 1982-11-16
IT8221211A0 (it) 1982-05-12
IT1152129B (it) 1986-12-31
FR2506058A1 (fr) 1982-11-19
KR840000082A (ko) 1984-01-30
FR2506058B1 (cs) 1985-04-12
GB2098397A (en) 1982-11-17

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8139 Disposal/non-payment of the annual fee