FR2506058A1 - Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif - Google Patents

Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif

Info

Publication number
FR2506058A1
FR2506058A1 FR8207966A FR8207966A FR2506058A1 FR 2506058 A1 FR2506058 A1 FR 2506058A1 FR 8207966 A FR8207966 A FR 8207966A FR 8207966 A FR8207966 A FR 8207966A FR 2506058 A1 FR2506058 A1 FR 2506058A1
Authority
FR
France
Prior art keywords
condenser
ary
memory device
manufacturing
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8207966A
Other languages
English (en)
French (fr)
Other versions
FR2506058B1 (cs
Inventor
Masamichi Ishihara
Masanori Tazunoki
Takeshi Kajimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2506058A1 publication Critical patent/FR2506058A1/fr
Application granted granted Critical
Publication of FR2506058B1 publication Critical patent/FR2506058B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR8207966A 1981-05-13 1982-05-07 Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif Granted FR2506058A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56070732A JPS57186354A (en) 1981-05-13 1981-05-13 Semiconductor memory storage and manufacture thereof

Publications (2)

Publication Number Publication Date
FR2506058A1 true FR2506058A1 (fr) 1982-11-19
FR2506058B1 FR2506058B1 (cs) 1985-04-12

Family

ID=13439994

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8207966A Granted FR2506058A1 (fr) 1981-05-13 1982-05-07 Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif

Country Status (6)

Country Link
JP (1) JPS57186354A (cs)
KR (1) KR840000082A (cs)
DE (1) DE3217896A1 (cs)
FR (1) FR2506058A1 (cs)
GB (1) GB2098397A (cs)
IT (1) IT1152129B (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58181319A (ja) * 1982-04-19 1983-10-24 Hitachi Ltd タイミング発生回路
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
JPS59172761A (ja) * 1983-03-23 1984-09-29 Hitachi Ltd 半導体装置
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device
JPS60206163A (ja) * 1984-03-30 1985-10-17 Toshiba Corp 半導体記憶装置
JPS6421788A (en) * 1987-07-16 1989-01-25 Nec Corp Semiconductor memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4130895A (en) * 1976-07-26 1978-12-19 Siemens Aktiengesellschaft Storage module
US4264965A (en) * 1978-10-27 1981-04-28 Hitachi, Ltd. Dummy cell structure for MIS dynamic memories

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2130908A1 (de) * 1970-06-22 1971-12-30 Cogar Corp Speicherzelle mit Metalloxidhalbleiter-Einrichtungen mit verschiedenen Steilheiten
DE2646245A1 (de) * 1975-10-28 1977-05-05 Motorola Inc Speicherschaltung
JPS53112686A (en) * 1977-03-14 1978-10-02 Oki Electric Ind Co Ltd Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4130895A (en) * 1976-07-26 1978-12-19 Siemens Aktiengesellschaft Storage module
US4264965A (en) * 1978-10-27 1981-04-28 Hitachi, Ltd. Dummy cell structure for MIS dynamic memories

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, volume 15, no. 4, septembre 1972 (NEW YORK, US) A.R. LEBLANC "Field effect transistor memory circuit", pages 1292-1293 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif

Also Published As

Publication number Publication date
JPS57186354A (en) 1982-11-16
IT8221211A0 (it) 1982-05-12
IT1152129B (it) 1986-12-31
KR840000082A (ko) 1984-01-30
FR2506058B1 (cs) 1985-04-12
GB2098397A (en) 1982-11-17
DE3217896A1 (de) 1983-05-26

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Legal Events

Date Code Title Description
ST Notification of lapse