DE3209055C2 - - Google Patents

Info

Publication number
DE3209055C2
DE3209055C2 DE3209055A DE3209055A DE3209055C2 DE 3209055 C2 DE3209055 C2 DE 3209055C2 DE 3209055 A DE3209055 A DE 3209055A DE 3209055 A DE3209055 A DE 3209055A DE 3209055 C2 DE3209055 C2 DE 3209055C2
Authority
DE
Germany
Prior art keywords
compounds
formula
substances
photoconductive layer
recording material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3209055A
Other languages
German (de)
English (en)
Other versions
DE3209055A1 (de
Inventor
Isamu Yokohama Kanagawa Jp Shimizu
Kyosuke Ogawa
Eiichi Tokyo Jp Inoue
Junichiro Yokohama Kanagawa Jp Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56036267A external-priority patent/JPS57149466A/ja
Priority claimed from JP56037441A external-priority patent/JPS57152463A/ja
Priority claimed from JP56037442A external-priority patent/JPS57152464A/ja
Priority claimed from JP56060157A external-priority patent/JPS57174454A/ja
Priority claimed from JP56060154A external-priority patent/JPS57174449A/ja
Priority claimed from JP56060158A external-priority patent/JPS57174452A/ja
Priority claimed from JP56060156A external-priority patent/JPS6050871B2/ja
Priority claimed from JP56060153A external-priority patent/JPS57174448A/ja
Priority claimed from JP56060155A external-priority patent/JPS57174450A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3209055A1 publication Critical patent/DE3209055A1/de
Publication of DE3209055C2 publication Critical patent/DE3209055C2/de
Application granted granted Critical
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
DE19823209055 1981-03-12 1982-03-12 Verfahren zur herstellung eines fotoleitfaehigen elements Granted DE3209055A1 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP56036267A JPS57149466A (en) 1981-03-12 1981-03-12 Production of photoconductive member
JP56037442A JPS57152464A (en) 1981-03-16 1981-03-16 Manufacture of photoconductive member
JP56037441A JPS57152463A (en) 1981-03-16 1981-03-16 Manufacture of photoconductive member
JP56060154A JPS57174449A (en) 1981-04-21 1981-04-21 Production of photoconductive member
JP56060158A JPS57174452A (en) 1981-04-21 1981-04-21 Production of photoconductive member
JP56060157A JPS57174454A (en) 1981-04-21 1981-04-21 Production of photoconductive member
JP56060156A JPS6050871B2 (ja) 1981-04-21 1981-04-21 光導電部材の製造法
JP56060153A JPS57174448A (en) 1981-04-21 1981-04-21 Production of photoconductive member
JP56060155A JPS57174450A (en) 1981-04-21 1981-04-21 Production of photoconductive member

Publications (2)

Publication Number Publication Date
DE3209055A1 DE3209055A1 (de) 1982-10-21
DE3209055C2 true DE3209055C2 (enExample) 1988-02-11

Family

ID=27576896

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823209055 Granted DE3209055A1 (de) 1981-03-12 1982-03-12 Verfahren zur herstellung eines fotoleitfaehigen elements

Country Status (2)

Country Link
US (1) US4468443A (enExample)
DE (1) DE3209055A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111152A (ja) * 1982-12-16 1984-06-27 Sharp Corp 電子写真用感光体
JPS59200248A (ja) * 1983-04-28 1984-11-13 Canon Inc 像形成部材の製造法
DE3429899A1 (de) * 1983-08-16 1985-03-07 Canon K.K., Tokio/Tokyo Verfahren zur bildung eines abscheidungsfilms
JPS60243663A (ja) * 1984-05-18 1985-12-03 Kyocera Corp 電子写真感光体
US4759947A (en) * 1984-10-08 1988-07-26 Canon Kabushiki Kaisha Method for forming deposition film using Si compound and active species from carbon and halogen compound
US4849315A (en) * 1985-01-21 1989-07-18 Xerox Corporation Processes for restoring hydrogenated and halogenated amorphous silicon imaging members
US4726963A (en) * 1985-02-19 1988-02-23 Canon Kabushiki Kaisha Process for forming deposited film
US4778692A (en) * 1985-02-20 1988-10-18 Canon Kabushiki Kaisha Process for forming deposited film
US5244698A (en) * 1985-02-21 1993-09-14 Canon Kabushiki Kaisha Process for forming deposited film
US4818563A (en) * 1985-02-21 1989-04-04 Canon Kabushiki Kaisha Process for forming deposited film
US4853251A (en) * 1985-02-22 1989-08-01 Canon Kabushiki Kaisha Process for forming deposited film including carbon as a constituent element
US4801468A (en) * 1985-02-25 1989-01-31 Canon Kabushiki Kaisha Process for forming deposited film
JP2537175B2 (ja) * 1985-03-27 1996-09-25 キヤノン株式会社 機能性堆積膜の製造装置
US4777103A (en) * 1985-10-30 1988-10-11 Fujitsu Limited Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same
JPH0647727B2 (ja) * 1985-12-24 1994-06-22 キヤノン株式会社 堆積膜形成法
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
US5030536A (en) * 1989-12-26 1991-07-09 Xerox Corporation Processes for restoring amorphous silicon imaging members

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
US4328258A (en) * 1977-12-05 1982-05-04 Plasma Physics Corp. Method of forming semiconducting materials and barriers
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member

Also Published As

Publication number Publication date
DE3209055A1 (de) 1982-10-21
US4468443A (en) 1984-08-28

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition