DE3200376C2 - - Google Patents

Info

Publication number
DE3200376C2
DE3200376C2 DE3200376A DE3200376A DE3200376C2 DE 3200376 C2 DE3200376 C2 DE 3200376C2 DE 3200376 A DE3200376 A DE 3200376A DE 3200376 A DE3200376 A DE 3200376A DE 3200376 C2 DE3200376 C2 DE 3200376C2
Authority
DE
Germany
Prior art keywords
layer
atoms
recording material
amorphous
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3200376A
Other languages
German (de)
English (en)
Other versions
DE3200376A1 (de
Inventor
Shigeru Yamato Kanagawa Jp Shirai
Junichiro Kanbe
Tadaji Yokohama Kanagawa Jp Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56002275A external-priority patent/JPS57115558A/ja
Priority claimed from JP56002244A external-priority patent/JPS57115555A/ja
Priority claimed from JP56002245A external-priority patent/JPS57116346A/ja
Priority claimed from JP56003593A external-priority patent/JPS57118250A/ja
Priority claimed from JP56003594A external-priority patent/JPS57118251A/ja
Priority claimed from JP56003592A external-priority patent/JPS57116347A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3200376A1 publication Critical patent/DE3200376A1/de
Application granted granted Critical
Publication of DE3200376C2 publication Critical patent/DE3200376C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19823200376 1981-01-09 1982-01-08 Fotoleitfaehiges element Granted DE3200376A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP56002275A JPS57115558A (en) 1981-01-09 1981-01-09 Photoconductive material
JP56002244A JPS57115555A (en) 1981-01-10 1981-01-10 Photoconductive material
JP56002245A JPS57116346A (en) 1981-01-10 1981-01-10 Photoconductive material
JP56003593A JPS57118250A (en) 1981-01-13 1981-01-13 Photoconductive member
JP56003594A JPS57118251A (en) 1981-01-13 1981-01-13 Photoconductive member
JP56003592A JPS57116347A (en) 1981-01-13 1981-01-13 Photoconductive material

Publications (2)

Publication Number Publication Date
DE3200376A1 DE3200376A1 (de) 1982-11-04
DE3200376C2 true DE3200376C2 (enExample) 1988-03-03

Family

ID=27547683

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823200376 Granted DE3200376A1 (de) 1981-01-09 1982-01-08 Fotoleitfaehiges element

Country Status (2)

Country Link
US (1) US4525442A (enExample)
DE (1) DE3200376A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565731A (en) * 1978-05-04 1986-01-21 Canon Kabushiki Kaisha Image-forming member for electrophotography
JPS59111152A (ja) * 1982-12-16 1984-06-27 Sharp Corp 電子写真用感光体
US4634647A (en) * 1983-08-19 1987-01-06 Xerox Corporation Electrophotographic devices containing compensated amorphous silicon compositions
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
US4624862A (en) * 1984-11-05 1986-11-25 Energy Conversion Devices, Inc. Boron doped semiconductor materials and method for producing same
JPS61221752A (ja) * 1985-03-12 1986-10-02 Sharp Corp 電子写真感光体
US4666806A (en) * 1985-09-30 1987-05-19 Xerox Corporation Overcoated amorphous silicon imaging members
US4673589A (en) * 1986-02-18 1987-06-16 Amoco Corporation Photoconducting amorphous carbon
EP0246622A3 (en) * 1986-05-22 1990-03-21 Mitsubishi Kasei Corporation Magnetic toner
EP0261654A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0261652A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4758487A (en) * 1986-11-24 1988-07-19 Xerox Corporation Electrostatographic imaging members with amorphous boron
US4980596A (en) * 1988-12-13 1990-12-25 United Technologies Corporation Acoustic charge transport device having direct optical input
US4926083A (en) * 1988-12-13 1990-05-15 United Technologies Corporation Optically modulated acoustic charge transport device
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4200473A (en) * 1979-03-12 1980-04-29 Rca Corporation Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member

Also Published As

Publication number Publication date
DE3200376A1 (de) 1982-11-04
US4525442A (en) 1985-06-25

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: G03G 5/082

D2 Grant after examination
8364 No opposition during term of opposition