DE3433507C2 - - Google Patents

Info

Publication number
DE3433507C2
DE3433507C2 DE3433507A DE3433507A DE3433507C2 DE 3433507 C2 DE3433507 C2 DE 3433507C2 DE 3433507 A DE3433507 A DE 3433507A DE 3433507 A DE3433507 A DE 3433507A DE 3433507 C2 DE3433507 C2 DE 3433507C2
Authority
DE
Germany
Prior art keywords
layer
atoms
recording material
electrophotographic recording
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3433507A
Other languages
German (de)
English (en)
Other versions
DE3433507A1 (de
Inventor
Keishi Ibaraki Jp Saitoh
Yukihiko Kawasaki Kanagawa Jp Ohnuki
Shigeru Yokohama Kanagawa Jp Ohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58168546A external-priority patent/JPS6059366A/ja
Priority claimed from JP58170382A external-priority patent/JPS6060653A/ja
Priority claimed from JP58244737A external-priority patent/JPS60138557A/ja
Priority claimed from JP58244741A external-priority patent/JPS60138561A/ja
Priority claimed from JP58245304A external-priority patent/JPS60140247A/ja
Priority claimed from JP58245316A external-priority patent/JPS60140259A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3433507A1 publication Critical patent/DE3433507A1/de
Application granted granted Critical
Publication of DE3433507C2 publication Critical patent/DE3433507C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G03G5/08242—Silicon-based comprising three or four silicon-based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19843433507 1983-09-12 1984-09-12 Fotoleitfaehiges aufzeichnungselement Granted DE3433507A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP58168546A JPS6059366A (ja) 1983-09-12 1983-09-12 光導電部材
JP58170382A JPS6060653A (ja) 1983-09-13 1983-09-13 電子写真用光導電部材
JP58244737A JPS60138557A (ja) 1983-12-27 1983-12-27 電子写真用光導電部材
JP58244741A JPS60138561A (ja) 1983-12-27 1983-12-27 電子写真用光導電部材
JP58245304A JPS60140247A (ja) 1983-12-28 1983-12-28 光導電部材
JP58245316A JPS60140259A (ja) 1983-12-28 1983-12-28 光導電部材

Publications (2)

Publication Number Publication Date
DE3433507A1 DE3433507A1 (de) 1985-03-28
DE3433507C2 true DE3433507C2 (enExample) 1989-02-23

Family

ID=27553346

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843433507 Granted DE3433507A1 (de) 1983-09-12 1984-09-12 Fotoleitfaehiges aufzeichnungselement

Country Status (2)

Country Link
US (1) US4595644A (enExample)
DE (1) DE3433507A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720443A (en) * 1984-04-05 1988-01-19 Canon Kabushiki Kaisha Member having light receiving layer with nonparallel interfaces
JPS60212768A (ja) * 1984-04-06 1985-10-25 Canon Inc 光受容部材
US4705732A (en) * 1984-04-27 1987-11-10 Canon Kabushiki Kaisha Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon
JPS60257453A (ja) * 1984-06-04 1985-12-19 Canon Inc 光受容部材
US4705731A (en) * 1984-06-05 1987-11-10 Canon Kabushiki Kaisha Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer
DE3580939D1 (de) * 1984-06-05 1991-01-31 Canon Kk Lichtempfangselement.
US4705735A (en) * 1984-06-07 1987-11-10 Canon Kabushiki Kaisha Member having substrate with protruding surface portions and light receiving layer with amorphous silicon matrix
US4696883A (en) * 1984-07-09 1987-09-29 Canon Kabushiki Kaisha Member having light receiving layer with smoothly connected non-parallel interfaces and surface reflective layer
US4696881A (en) * 1984-07-10 1987-09-29 Canon Kabushiki Kaisha Member having light receiving layer with smoothly connected interfaces
US4696882A (en) * 1984-07-12 1987-09-29 Canon Kabushiki Kaisha Member having light receiving layer with smoothly interconnecting nonparallel interfaces
US20030111013A1 (en) * 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
KR101476120B1 (ko) * 2008-06-12 2014-12-26 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57172344A (en) * 1981-04-17 1982-10-23 Minolta Camera Co Ltd Electrophotographic photorecepter
US4491626A (en) * 1982-03-31 1985-01-01 Minolta Camera Kabushiki Kaisha Photosensitive member
US4490450A (en) * 1982-03-31 1984-12-25 Canon Kabushiki Kaisha Photoconductive member
JPS58189643A (ja) * 1982-03-31 1983-11-05 Minolta Camera Co Ltd 感光体

Also Published As

Publication number Publication date
DE3433507A1 (de) 1985-03-28
US4595644A (en) 1986-06-17

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8380 Miscellaneous part iii

Free format text: SEITE 2, ZEILE 61 DAS WORT "SCHICHT" DOPPELT EINMAL STREICHEN SEITE 2, ZEILE 64 "22," AENDERN IN "21," SEITE 3, ZEILE 63 DAS WORT "BESTEHT," STREICHEN

8364 No opposition during term of opposition