DE3241351C2 - - Google Patents
Info
- Publication number
- DE3241351C2 DE3241351C2 DE3241351A DE3241351A DE3241351C2 DE 3241351 C2 DE3241351 C2 DE 3241351C2 DE 3241351 A DE3241351 A DE 3241351A DE 3241351 A DE3241351 A DE 3241351A DE 3241351 C2 DE3241351 C2 DE 3241351C2
- Authority
- DE
- Germany
- Prior art keywords
- atoms
- layer
- element according
- photoconductive element
- layer region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
- H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56179434A JPS5880645A (ja) | 1981-11-09 | 1981-11-09 | 電子写真用光導電部材 |
| JP56182656A JPS5883856A (ja) | 1981-11-13 | 1981-11-13 | 電子写真用光導電部材 |
| JP56182655A JPS5883855A (ja) | 1981-11-13 | 1981-11-13 | 電子写真用光導電部材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3241351A1 DE3241351A1 (de) | 1983-05-19 |
| DE3241351C2 true DE3241351C2 (enExample) | 1991-05-29 |
Family
ID=27324723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823241351 Granted DE3241351A1 (de) | 1981-11-09 | 1982-11-09 | Fotoleitfaehiges element |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4536460A (enExample) |
| DE (1) | DE3241351A1 (enExample) |
| GB (1) | GB2111704B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4795688A (en) * | 1982-03-16 | 1989-01-03 | Canon Kabushiki Kaisha | Layered photoconductive member comprising amorphous silicon |
| JPS59111152A (ja) * | 1982-12-16 | 1984-06-27 | Sharp Corp | 電子写真用感光体 |
| JPS60119567A (ja) * | 1983-12-01 | 1985-06-27 | Ricoh Co Ltd | 電子写真感光体 |
| JPS60146251A (ja) * | 1984-01-10 | 1985-08-01 | Sharp Corp | 電子写真用感光体の製造方法 |
| DE3511315A1 (de) * | 1984-03-28 | 1985-10-24 | Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo | Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial |
| JPS63135949A (ja) * | 1986-11-26 | 1988-06-08 | Kyocera Corp | 電子写真感光体 |
| US4851367A (en) * | 1988-08-17 | 1989-07-25 | Eastman Kodak Company | Method of making primary current detector using plasma enhanced chemical vapor deposition |
| US5159389A (en) * | 1988-08-30 | 1992-10-27 | Sanyo Electric Co., Ltd. | Electrostatic latent image apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE598570A (enExample) * | 1959-12-30 | |||
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
| JPS5662254A (en) * | 1979-10-24 | 1981-05-28 | Canon Inc | Electrophotographic imaging material |
| JPS5664347A (en) * | 1979-10-30 | 1981-06-01 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
| US4361638A (en) * | 1979-10-30 | 1982-11-30 | Fuji Photo Film Co., Ltd. | Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same |
| DE3046509A1 (de) * | 1979-12-13 | 1981-08-27 | Canon K.K., Tokyo | Elektrophotographisches bilderzeugungsmaterial |
| US4251289A (en) * | 1979-12-28 | 1981-02-17 | Exxon Research & Engineering Co. | Gradient doping in amorphous silicon |
| US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
-
1982
- 1982-10-28 US US06/437,282 patent/US4536460A/en not_active Expired - Lifetime
- 1982-11-01 GB GB08231137A patent/GB2111704B/en not_active Expired
- 1982-11-09 DE DE19823241351 patent/DE3241351A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2111704A (en) | 1983-07-06 |
| DE3241351A1 (de) | 1983-05-19 |
| US4536460A (en) | 1985-08-20 |
| GB2111704B (en) | 1985-10-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |