DE3241351A1 - Fotoleitfaehiges element - Google Patents

Fotoleitfaehiges element

Info

Publication number
DE3241351A1
DE3241351A1 DE19823241351 DE3241351A DE3241351A1 DE 3241351 A1 DE3241351 A1 DE 3241351A1 DE 19823241351 DE19823241351 DE 19823241351 DE 3241351 A DE3241351 A DE 3241351A DE 3241351 A1 DE3241351 A1 DE 3241351A1
Authority
DE
Germany
Prior art keywords
atoms
layer
photoconductive element
element according
layer region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823241351
Other languages
German (de)
English (en)
Other versions
DE3241351C2 (enExample
Inventor
Junichiro Yokohama Kanagawa Kanbe
Teruo Kawasaki Kanagawa Misumi
Yoichi Yokohama Kanagawa Osato
Keishi Tokyo Saitoh
Shigeru Yamato Kanagawa Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56179434A external-priority patent/JPS5880645A/ja
Priority claimed from JP56182656A external-priority patent/JPS5883856A/ja
Priority claimed from JP56182655A external-priority patent/JPS5883855A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3241351A1 publication Critical patent/DE3241351A1/de
Application granted granted Critical
Publication of DE3241351C2 publication Critical patent/DE3241351C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19823241351 1981-11-09 1982-11-09 Fotoleitfaehiges element Granted DE3241351A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56179434A JPS5880645A (ja) 1981-11-09 1981-11-09 電子写真用光導電部材
JP56182656A JPS5883856A (ja) 1981-11-13 1981-11-13 電子写真用光導電部材
JP56182655A JPS5883855A (ja) 1981-11-13 1981-11-13 電子写真用光導電部材

Publications (2)

Publication Number Publication Date
DE3241351A1 true DE3241351A1 (de) 1983-05-19
DE3241351C2 DE3241351C2 (enExample) 1991-05-29

Family

ID=27324723

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823241351 Granted DE3241351A1 (de) 1981-11-09 1982-11-09 Fotoleitfaehiges element

Country Status (3)

Country Link
US (1) US4536460A (enExample)
DE (1) DE3241351A1 (enExample)
GB (1) GB2111704B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345108A1 (de) * 1982-12-16 1984-06-20 Sharp K.K., Osaka Photorezeptor fuer die elektrophotographie

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
JPS60119567A (ja) * 1983-12-01 1985-06-27 Ricoh Co Ltd 電子写真感光体
JPS60146251A (ja) * 1984-01-10 1985-08-01 Sharp Corp 電子写真用感光体の製造方法
DE3511315A1 (de) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial
JPS63135949A (ja) * 1986-11-26 1988-06-08 Kyocera Corp 電子写真感光体
US4851367A (en) * 1988-08-17 1989-07-25 Eastman Kodak Company Method of making primary current detector using plasma enhanced chemical vapor deposition
US5159389A (en) * 1988-08-30 1992-10-27 Sanyo Electric Co., Ltd. Electrostatic latent image apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040031A1 (de) * 1979-10-24 1981-05-07 Canon K.K., Tokyo Bilderzeugungselement fuer elektrophotographische zwecke
DE3046509A1 (de) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Elektrophotographisches bilderzeugungsmaterial

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE598570A (enExample) * 1959-12-30
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5664347A (en) * 1979-10-30 1981-06-01 Fuji Photo Film Co Ltd Electrophotographic receptor
US4361638A (en) * 1979-10-30 1982-11-30 Fuji Photo Film Co., Ltd. Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040031A1 (de) * 1979-10-24 1981-05-07 Canon K.K., Tokyo Bilderzeugungselement fuer elektrophotographische zwecke
DE3046509A1 (de) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Elektrophotographisches bilderzeugungsmaterial

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3345108A1 (de) * 1982-12-16 1984-06-20 Sharp K.K., Osaka Photorezeptor fuer die elektrophotographie

Also Published As

Publication number Publication date
GB2111704A (en) 1983-07-06
US4536460A (en) 1985-08-20
GB2111704B (en) 1985-10-23
DE3241351C2 (enExample) 1991-05-29

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition