GB2111704B - Photoconductive member - Google Patents
Photoconductive memberInfo
- Publication number
- GB2111704B GB2111704B GB08231137A GB8231137A GB2111704B GB 2111704 B GB2111704 B GB 2111704B GB 08231137 A GB08231137 A GB 08231137A GB 8231137 A GB8231137 A GB 8231137A GB 2111704 B GB2111704 B GB 2111704B
- Authority
- GB
- United Kingdom
- Prior art keywords
- photoconductive member
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56179434A JPS5880645A (en) | 1981-11-09 | 1981-11-09 | Photoconductive material |
JP56182656A JPS5883856A (en) | 1981-11-13 | 1981-11-13 | Photoconductive member |
JP56182655A JPS5883855A (en) | 1981-11-13 | 1981-11-13 | Photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2111704A GB2111704A (en) | 1983-07-06 |
GB2111704B true GB2111704B (en) | 1985-10-23 |
Family
ID=27324723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08231137A Expired GB2111704B (en) | 1981-11-09 | 1982-11-01 | Photoconductive member |
Country Status (3)
Country | Link |
---|---|
US (1) | US4536460A (en) |
DE (1) | DE3241351A1 (en) |
GB (1) | GB2111704B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4795688A (en) * | 1982-03-16 | 1989-01-03 | Canon Kabushiki Kaisha | Layered photoconductive member comprising amorphous silicon |
JPS59111152A (en) * | 1982-12-16 | 1984-06-27 | Sharp Corp | Photosensitive body for electrophotography |
JPS60119567A (en) * | 1983-12-01 | 1985-06-27 | Ricoh Co Ltd | Electrophotographic sensitive body |
JPS60146251A (en) * | 1984-01-10 | 1985-08-01 | Sharp Corp | Manufacture of electrophotographic sensitive body |
DE3511315A1 (en) * | 1984-03-28 | 1985-10-24 | Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo | ELECTROSTATOGRAPHIC, ESPECIALLY ELECTROPHOTOGRAPHIC RECORDING MATERIAL |
JPS63135949A (en) * | 1986-11-26 | 1988-06-08 | Kyocera Corp | Electrophotographic sensitive body |
US4851367A (en) * | 1988-08-17 | 1989-07-25 | Eastman Kodak Company | Method of making primary current detector using plasma enhanced chemical vapor deposition |
US5159389A (en) * | 1988-08-30 | 1992-10-27 | Sanyo Electric Co., Ltd. | Electrostatic latent image apparatus |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL259610A (en) * | 1959-12-30 | |||
AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
US4217374A (en) * | 1978-03-08 | 1980-08-12 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
JPS554040A (en) * | 1978-06-26 | 1980-01-12 | Hitachi Ltd | Photoconductive material |
JPS5662254A (en) * | 1979-10-24 | 1981-05-28 | Canon Inc | Electrophotographic imaging material |
US4361638A (en) * | 1979-10-30 | 1982-11-30 | Fuji Photo Film Co., Ltd. | Electrophotographic element with alpha -Si and C material doped with H and F and process for producing the same |
JPS5664347A (en) * | 1979-10-30 | 1981-06-01 | Fuji Photo Film Co Ltd | Electrophotographic receptor |
DE3046509A1 (en) * | 1979-12-13 | 1981-08-27 | Canon K.K., Tokyo | Heat-stable electrophotographic image-generating material - contg. photoconductive layer comprising amorphous material with silicon matrix and halogen component atoms |
US4251289A (en) * | 1979-12-28 | 1981-02-17 | Exxon Research & Engineering Co. | Gradient doping in amorphous silicon |
US4253882A (en) * | 1980-02-15 | 1981-03-03 | University Of Delaware | Multiple gap photovoltaic device |
-
1982
- 1982-10-28 US US06/437,282 patent/US4536460A/en not_active Expired - Lifetime
- 1982-11-01 GB GB08231137A patent/GB2111704B/en not_active Expired
- 1982-11-09 DE DE19823241351 patent/DE3241351A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
GB2111704A (en) | 1983-07-06 |
US4536460A (en) | 1985-08-20 |
DE3241351C2 (en) | 1991-05-29 |
DE3241351A1 (en) | 1983-05-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Effective date: 20021031 |