GB2111704B - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
GB2111704B
GB2111704B GB08231137A GB8231137A GB2111704B GB 2111704 B GB2111704 B GB 2111704B GB 08231137 A GB08231137 A GB 08231137A GB 8231137 A GB8231137 A GB 8231137A GB 2111704 B GB2111704 B GB 2111704B
Authority
GB
United Kingdom
Prior art keywords
photoconductive member
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08231137A
Other versions
GB2111704A (en
Inventor
Junichiro Kanbe
Shigeru Shirai
Teruo Misumi
Keishi Saitoh
Yoichi Osato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56179434A external-priority patent/JPS5880645A/en
Priority claimed from JP56182656A external-priority patent/JPS5883856A/en
Priority claimed from JP56182655A external-priority patent/JPS5883855A/en
Application filed by Canon Inc filed Critical Canon Inc
Publication of GB2111704A publication Critical patent/GB2111704A/en
Application granted granted Critical
Publication of GB2111704B publication Critical patent/GB2111704B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
GB08231137A 1981-11-09 1982-11-01 Photoconductive member Expired GB2111704B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56179434A JPS5880645A (en) 1981-11-09 1981-11-09 Photoconductive material
JP56182656A JPS5883856A (en) 1981-11-13 1981-11-13 Photoconductive member
JP56182655A JPS5883855A (en) 1981-11-13 1981-11-13 Photoconductive member

Publications (2)

Publication Number Publication Date
GB2111704A GB2111704A (en) 1983-07-06
GB2111704B true GB2111704B (en) 1985-10-23

Family

ID=27324723

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08231137A Expired GB2111704B (en) 1981-11-09 1982-11-01 Photoconductive member

Country Status (3)

Country Link
US (1) US4536460A (en)
DE (1) DE3241351A1 (en)
GB (1) GB2111704B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
JPS59111152A (en) * 1982-12-16 1984-06-27 Sharp Corp Photosensitive body for electrophotography
JPS60119567A (en) * 1983-12-01 1985-06-27 Ricoh Co Ltd Electrophotographic sensitive body
JPS60146251A (en) * 1984-01-10 1985-08-01 Sharp Corp Manufacture of electrophotographic sensitive body
DE3511315A1 (en) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo ELECTROSTATOGRAPHIC, ESPECIALLY ELECTROPHOTOGRAPHIC RECORDING MATERIAL
JPS63135949A (en) * 1986-11-26 1988-06-08 Kyocera Corp Electrophotographic sensitive body
US4851367A (en) * 1988-08-17 1989-07-25 Eastman Kodak Company Method of making primary current detector using plasma enhanced chemical vapor deposition
US5159389A (en) * 1988-08-30 1992-10-27 Sanyo Electric Co., Ltd. Electrostatic latent image apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE598570A (en) * 1959-12-30
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
JPS5662254A (en) * 1979-10-24 1981-05-28 Canon Inc Electrophotographic imaging material
DE3040972A1 (en) * 1979-10-30 1981-05-14 Fuji Photo Film Co. Ltd., Minami-Ashigara, Kanagawa ELECTROPHOTOGRAPHIC LIGHT SENSITIVE MATERIAL AND METHOD FOR THE PRODUCTION THEREOF
JPS5664347A (en) * 1979-10-30 1981-06-01 Fuji Photo Film Co Ltd Electrophotographic receptor
DE3046509A1 (en) * 1979-12-13 1981-08-27 Canon K.K., Tokyo Heat-stable electrophotographic image-generating material - contg. photoconductive layer comprising amorphous material with silicon matrix and halogen component atoms
US4251289A (en) * 1979-12-28 1981-02-17 Exxon Research & Engineering Co. Gradient doping in amorphous silicon
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device

Also Published As

Publication number Publication date
GB2111704A (en) 1983-07-06
US4536460A (en) 1985-08-20
DE3241351C2 (en) 1991-05-29
DE3241351A1 (en) 1983-05-19

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20021031