DE3151146C2 - - Google Patents

Info

Publication number
DE3151146C2
DE3151146C2 DE3151146A DE3151146A DE3151146C2 DE 3151146 C2 DE3151146 C2 DE 3151146C2 DE 3151146 A DE3151146 A DE 3151146A DE 3151146 A DE3151146 A DE 3151146A DE 3151146 C2 DE3151146 C2 DE 3151146C2
Authority
DE
Germany
Prior art keywords
layer
carrier
barrier layer
photo charge
recording material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3151146A
Other languages
German (de)
English (en)
Other versions
DE3151146A1 (de
Inventor
Shigeru Yamato Kanagawa Jp Shirai
Junichiro Yokohama Kanagawa Jp Kanbe
Tadaji Kawasaki Kanagawa Jp Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55183130A external-priority patent/JPS57105745A/ja
Priority claimed from JP55183131A external-priority patent/JPS57105744A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3151146A1 publication Critical patent/DE3151146A1/de
Application granted granted Critical
Publication of DE3151146C2 publication Critical patent/DE3151146C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers
    • G03G5/142—Inert intermediate layers
    • G03G5/144—Inert intermediate layers comprising inorganic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
DE19813151146 1980-12-23 1981-12-23 Photoleitfaehiges element Granted DE3151146A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP55183130A JPS57105745A (en) 1980-12-23 1980-12-23 Photoconductive member
JP55183131A JPS57105744A (en) 1980-12-23 1980-12-23 Photoconductive member

Publications (2)

Publication Number Publication Date
DE3151146A1 DE3151146A1 (de) 1982-07-15
DE3151146C2 true DE3151146C2 (enExample) 1990-01-11

Family

ID=26501679

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813151146 Granted DE3151146A1 (de) 1980-12-23 1981-12-23 Photoleitfaehiges element

Country Status (2)

Country Link
US (1) US4557987A (enExample)
DE (1) DE3151146A1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8204056A (nl) * 1982-10-21 1984-05-16 Oce Nederland Bv Fotogeleidend element voor toepassing in elektrofotografische kopieerprocessen.
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
JPS6083957A (ja) * 1983-10-13 1985-05-13 Sharp Corp 電子写真感光体
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
US4624862A (en) * 1984-11-05 1986-11-25 Energy Conversion Devices, Inc. Boron doped semiconductor materials and method for producing same
US4666803A (en) * 1984-11-26 1987-05-19 Kabushiki Kaisha Toshiba Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
US4673629A (en) * 1984-12-31 1987-06-16 Konishiroku Photo Industry Co., Ltd. Photoreceptor having amorphous silicon layers
US5140397A (en) * 1985-03-14 1992-08-18 Ricoh Company, Ltd. Amorphous silicon photoelectric device
US4713309A (en) * 1985-08-26 1987-12-15 Energy Conversion Devices, Inc. Enhancement layer for positively charged electrophotographic devices and method for decreasing charge fatigue through the use of said layer
US4721663A (en) * 1985-08-26 1988-01-26 Energy Conversion Devices, Inc. Enhancement layer for negatively charged electrophotographic devices
US4741982A (en) * 1985-09-13 1988-05-03 Minolta Camera Kabushiki Kaisha Photosensitive member having undercoat layer of amorphous carbon
US4749636A (en) * 1985-09-13 1988-06-07 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4743522A (en) * 1985-09-13 1988-05-10 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
US4738912A (en) * 1985-09-13 1988-04-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon transport layer
US5166018A (en) * 1985-09-13 1992-11-24 Minolta Camera Kabushiki Kaisha Photosensitive member with hydrogen-containing carbon layer
JPH0715980B2 (ja) * 1985-09-24 1995-02-22 株式会社日立製作所 受光素子
JPS62220959A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
EP0238095A1 (en) * 1986-03-20 1987-09-23 Minolta Camera Kabushiki Kaisha Photosensitive member composed of charge transporting layer and charge generating layer
JPS62220961A (ja) * 1986-03-20 1987-09-29 Minolta Camera Co Ltd 感光体
EP0241032A3 (en) * 1986-04-09 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member composed of charge transporting layer and charge generating layer
JPS62289848A (ja) * 1986-06-10 1987-12-16 Minolta Camera Co Ltd 感光体
US4810606A (en) * 1986-07-07 1989-03-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
US4863821A (en) * 1986-07-07 1989-09-05 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer having amorphous carbon
DE3740319A1 (de) * 1986-11-29 1988-06-09 Toshiba Kk Elektrophotographisches aufzeichnungsmaterial
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US4859553A (en) * 1987-05-04 1989-08-22 Xerox Corporation Imaging members with plasma deposited silicon oxides
CA2005255C (en) * 1988-12-14 1994-01-18 Katsuhiko Hayashi Contact type photoelectric transducer
DE4011267C2 (de) * 1989-04-12 1995-03-23 Fuji Electric Co Ltd Elektrofotografisches Aufzeichnungsmaterial
JP3952076B1 (ja) * 2006-04-25 2007-08-01 株式会社村田製作所 紫外線センサ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
US4226643A (en) * 1979-07-16 1980-10-07 Rca Corporation Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

Also Published As

Publication number Publication date
DE3151146A1 (de) 1982-07-15
US4557987A (en) 1985-12-10

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 31/08

D2 Grant after examination
8364 No opposition during term of opposition