JPS57174450A - Production of photoconductive member - Google Patents

Production of photoconductive member

Info

Publication number
JPS57174450A
JPS57174450A JP56060155A JP6015581A JPS57174450A JP S57174450 A JPS57174450 A JP S57174450A JP 56060155 A JP56060155 A JP 56060155A JP 6015581 A JP6015581 A JP 6015581A JP S57174450 A JPS57174450 A JP S57174450A
Authority
JP
Japan
Prior art keywords
formula
compds
raw material
carbon atoms
compd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060155A
Other languages
Japanese (ja)
Other versions
JPS6325069B2 (en
Inventor
Isamu Shimizu
Kyosuke Ogawa
Junichiro Kanbe
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56060155A priority Critical patent/JPS57174450A/en
Priority to US06/354,898 priority patent/US4468443A/en
Priority to DE19823209055 priority patent/DE3209055A1/en
Publication of JPS57174450A publication Critical patent/JPS57174450A/en
Publication of JPS6325069B2 publication Critical patent/JPS6325069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To form a good photoconductive layer easily by mixing >=2 kinds of one of the respective silicon compds. consisting of two specific formulas at specific ratios and mixing these with materials contg. carbon atoms thereby forming a raw material for formation of photoconductive layers. CONSTITUTION:A raw material is constituted of a material contg. carbon atoms as constituting atoms and the compds. expressed by the A formula SinH2n+2, B formula SimHlXk (n, m, k are positive integers, l is 0 or a positive integer, l+k=2m+2, X is halogen atom). At least two kinds are contained for either one of the compds. expressed by the A formula or the B formula, so that with respect to the compd. of the min. order of (n) or (m), for example, Si2H6, the compd. of (n) or (m) of higher order than this, for example, Si3H8 is contained at >=1vol%. The raw material for introduction of carbon atoms is, for example, methane, etc., and is mixed at about <=5vol% based on the vol. of the A formula and the B formula compds. The raw material is introduced in a decreased pressure deposition chamber in a gaseous state, and electric discharge is caused therin, whereby a photoconductive layer is formed on a substrate.
JP56060155A 1981-03-12 1981-04-21 Production of photoconductive member Granted JPS57174450A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56060155A JPS57174450A (en) 1981-04-21 1981-04-21 Production of photoconductive member
US06/354,898 US4468443A (en) 1981-03-12 1982-03-04 Process for producing photoconductive member from gaseous silicon compounds
DE19823209055 DE3209055A1 (en) 1981-03-12 1982-03-12 METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060155A JPS57174450A (en) 1981-04-21 1981-04-21 Production of photoconductive member

Publications (2)

Publication Number Publication Date
JPS57174450A true JPS57174450A (en) 1982-10-27
JPS6325069B2 JPS6325069B2 (en) 1988-05-24

Family

ID=13133972

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060155A Granted JPS57174450A (en) 1981-03-12 1981-04-21 Production of photoconductive member

Country Status (1)

Country Link
JP (1) JPS57174450A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068050A (en) * 1983-08-19 1985-04-18 エナージー・コンバーション・デバイセス・インコーポレーテッド Deposition method using new composition by selective light excitation
US6367731B1 (en) 1999-07-09 2002-04-09 Seiko Epson Corporation Roll paper pulling load-buffering device for a printer
JP2007030959A (en) * 2005-07-29 2007-02-08 Sato Corp Label pasting apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152462A (en) * 1981-03-16 1982-09-20 Canon Inc Manufacture of photoconductive member
JPS57152464A (en) * 1981-03-16 1982-09-20 Canon Inc Manufacture of photoconductive member

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57152462A (en) * 1981-03-16 1982-09-20 Canon Inc Manufacture of photoconductive member
JPS57152464A (en) * 1981-03-16 1982-09-20 Canon Inc Manufacture of photoconductive member

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068050A (en) * 1983-08-19 1985-04-18 エナージー・コンバーション・デバイセス・インコーポレーテッド Deposition method using new composition by selective light excitation
US6367731B1 (en) 1999-07-09 2002-04-09 Seiko Epson Corporation Roll paper pulling load-buffering device for a printer
JP2007030959A (en) * 2005-07-29 2007-02-08 Sato Corp Label pasting apparatus

Also Published As

Publication number Publication date
JPS6325069B2 (en) 1988-05-24

Similar Documents

Publication Publication Date Title
US3664866A (en) Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
ES8705929A1 (en) Gas mixtures and processes for deposition of amorphous semiconductors.
JPS6451618A (en) Microcrystalline silicon carbide semiconductor film and manufacture thereof
JPS6436086A (en) Functional deposition film
JPS57174450A (en) Production of photoconductive member
JPS562353A (en) Novel disazo compound and its preparation
JPS57174449A (en) Production of photoconductive member
JPS57174452A (en) Production of photoconductive member
ES8102159A1 (en) Process for the preparation of cellular polyurethane elastomers.
JPS57174448A (en) Production of photoconductive member
KR890008354A (en) High purity doping alloy
JPS57174451A (en) Production of photoconductive member
JPS57174454A (en) Production of photoconductive member
JPS57152464A (en) Manufacture of photoconductive member
EP0806495A3 (en) Metal-organic chemical vapor-phase deposition process
JPS5680128A (en) Manufacture of thin film
JPS57152462A (en) Manufacture of photoconductive member
JPS57149464A (en) Production of photoconductive member
JPS57152463A (en) Manufacture of photoconductive member
JPS56137790A (en) Speaker constitution body
JPS57147638A (en) Production of photoconductive member
ES8400453A1 (en) Thermoplastic propylene block copolymer.
JPS5595318A (en) Production of amorphous film
JPS562352A (en) Novel disazo compound and its preparation
JPS6437008A (en) Manufacture of amorphous semiconductor film