JPS57152463A - Manufacture of photoconductive member - Google Patents
Manufacture of photoconductive memberInfo
- Publication number
- JPS57152463A JPS57152463A JP56037441A JP3744181A JPS57152463A JP S57152463 A JPS57152463 A JP S57152463A JP 56037441 A JP56037441 A JP 56037441A JP 3744181 A JP3744181 A JP 3744181A JP S57152463 A JPS57152463 A JP S57152463A
- Authority
- JP
- Japan
- Prior art keywords
- photoconductive
- photoconductive layer
- compounds
- si2f6
- sicl4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
Abstract
PURPOSE:To obtain economically and easily a photoconductive member with superior photoconductive and electric characteristics by introducing >=2 kinds of specified Si compounds contg. halogen as gaseous starting material when a photoconductive layer is formed on a support. CONSTITUTION:Starting material for forming a photoconductive layer is composed of >=2 kinds of compounds represented by SimHlXk (where l+k=2m+2, l is 0 or an integer, and X is halogen), e.g., SiCl4, Si2F6 and Si2Cl6. The compounds are mixed so as to adjust the percentage of the compound of higher order of (m) such as Si2F6 to the compound of the lowest order of (m) such as SiCl4 to >=1vol%, and the mixture is introduced into a deposition chamber in the gaseous state. Glow discharge, arc discharge or other discharge is then caused in the mixed gaseous atmosphere to form a photoconductive layer on a support.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56037441A JPS57152463A (en) | 1981-03-16 | 1981-03-16 | Manufacture of photoconductive member |
US06/354,898 US4468443A (en) | 1981-03-12 | 1982-03-04 | Process for producing photoconductive member from gaseous silicon compounds |
DE19823209055 DE3209055A1 (en) | 1981-03-12 | 1982-03-12 | METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56037441A JPS57152463A (en) | 1981-03-16 | 1981-03-16 | Manufacture of photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57152463A true JPS57152463A (en) | 1982-09-20 |
JPS6331551B2 JPS6331551B2 (en) | 1988-06-24 |
Family
ID=12497592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56037441A Granted JPS57152463A (en) | 1981-03-12 | 1981-03-16 | Manufacture of photoconductive member |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57152463A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
-
1981
- 1981-03-16 JP JP56037441A patent/JPS57152463A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6068050A (en) * | 1983-08-19 | 1985-04-18 | エナージー・コンバーション・デバイセス・インコーポレーテッド | Deposition method using new composition by selective light excitation |
Also Published As
Publication number | Publication date |
---|---|
JPS6331551B2 (en) | 1988-06-24 |
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