JPS57174449A - Production of photoconductive member - Google Patents

Production of photoconductive member

Info

Publication number
JPS57174449A
JPS57174449A JP56060154A JP6015481A JPS57174449A JP S57174449 A JPS57174449 A JP S57174449A JP 56060154 A JP56060154 A JP 56060154A JP 6015481 A JP6015481 A JP 6015481A JP S57174449 A JPS57174449 A JP S57174449A
Authority
JP
Japan
Prior art keywords
compds
formula
carbon atoms
raw material
kinds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56060154A
Other languages
Japanese (ja)
Other versions
JPS6331553B2 (en
Inventor
Isamu Shimizu
Kyosuke Ogawa
Junichiro Kanbe
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56060154A priority Critical patent/JPS57174449A/en
Priority to US06/354,898 priority patent/US4468443A/en
Priority to DE19823209055 priority patent/DE3209055A1/en
Publication of JPS57174449A publication Critical patent/JPS57174449A/en
Publication of JPS6331553B2 publication Critical patent/JPS6331553B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To form an extremely good photoconductive layer easily on a substrate by mixing >=2 kinds of silicon compds. of the specific formula at specific ratios and mixing these with materials contg. carbon atoms, thereby constituting a raw material for formation of photoconductive layers. CONSTITUTION:A raw material for formation of photoconductive layers is constituted of a material consisting of carbon atoms as constituting atoms, and at least 2 kinds of the compds. expressed by the formula SimHlXk (m, k are positive integers, l is 0 or a positive integer, l+k-2m+2, X is halogen atom). The compds. of the formula are such that with respect to the compds. of the lowest order of (m), for example, SiF4, SiCl4, the compds. of (m) of higher order than this, for example, Si2F6, Si2Cl6 are mixed at >=1vol%, more preferably >=5vol%. There are, for example, methane, ethylene, acetylene, etc. as the material contg. carbon atoms, and these are mixed at about <=15vol% based on the vol. of the compds. of the formula. Such raw material is introduced in a gaseous state into a deposition chamber, the pressure wherein is kept decreased, whereby electric discharge is caused, and a photoconductive layer is formed over a wide area on a substrate.
JP56060154A 1981-03-12 1981-04-21 Production of photoconductive member Granted JPS57174449A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56060154A JPS57174449A (en) 1981-04-21 1981-04-21 Production of photoconductive member
US06/354,898 US4468443A (en) 1981-03-12 1982-03-04 Process for producing photoconductive member from gaseous silicon compounds
DE19823209055 DE3209055A1 (en) 1981-03-12 1982-03-12 METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56060154A JPS57174449A (en) 1981-04-21 1981-04-21 Production of photoconductive member

Publications (2)

Publication Number Publication Date
JPS57174449A true JPS57174449A (en) 1982-10-27
JPS6331553B2 JPS6331553B2 (en) 1988-06-24

Family

ID=13133944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56060154A Granted JPS57174449A (en) 1981-03-12 1981-04-21 Production of photoconductive member

Country Status (1)

Country Link
JP (1) JPS57174449A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068050A (en) * 1983-08-19 1985-04-18 エナージー・コンバーション・デバイセス・インコーポレーテッド Deposition method using new composition by selective light excitation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7204625B2 (en) 2019-07-25 2023-01-16 信越化学工業株式会社 Group III compound substrate manufacturing method and substrate manufactured by the manufacturing method
JP7398966B2 (en) 2020-01-10 2023-12-15 信越化学工業株式会社 Group III nitride substrate manufacturing method and Group III nitride substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068050A (en) * 1983-08-19 1985-04-18 エナージー・コンバーション・デバイセス・インコーポレーテッド Deposition method using new composition by selective light excitation
JPH06339627A (en) * 1983-08-19 1994-12-13 Energy Conversion Devices Inc Method for depositing semiconductor material on substrate and for producing thin film

Also Published As

Publication number Publication date
JPS6331553B2 (en) 1988-06-24

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