JPS57149466A - Production of photoconductive member - Google Patents

Production of photoconductive member

Info

Publication number
JPS57149466A
JPS57149466A JP56036267A JP3626781A JPS57149466A JP S57149466 A JPS57149466 A JP S57149466A JP 56036267 A JP56036267 A JP 56036267A JP 3626781 A JP3626781 A JP 3626781A JP S57149466 A JPS57149466 A JP S57149466A
Authority
JP
Japan
Prior art keywords
compounds represented
introducing
oxygen atom
general formula
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56036267A
Other languages
Japanese (ja)
Other versions
JPS6110036B2 (en
Inventor
Isamu Shimizu
Kyosuke Ogawa
Hidekazu Inoue
Junichiro Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56036267A priority Critical patent/JPS57149466A/en
Priority to US06/354,898 priority patent/US4468443A/en
Priority to DE19823209055 priority patent/DE3209055A1/en
Publication of JPS57149466A publication Critical patent/JPS57149466A/en
Publication of JPS6110036B2 publication Critical patent/JPS6110036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a member having uniform physical property and quality, by introducing a raw material comprising two or more compounds represented by a specified formula and an oxygen atom-introducing raw substance into an accumulation chamber, and forming a photoconductive member on a support by discharge. CONSTITUTION:Gaseous raw material is introduced into a decompressed accumulation chamber, and discharge is generated in the gaseous atmosphere to form a phnotoconductive layer on a support. Thus, a photoconductive member is produced. The raw material comprises compounds represented by the general formula of SinH2n+2 and an oxygen atom-introducing substance. As the compounds represented by the general formula, 1vol% or more, preferably 10vol%, of a higher-n compound, e.g. Si3H8 or Si4H10, is mixed with the lowest-n compound, e.g. Hi2H6. The rate of the oxygen atom-introducing raw substance, e.g. disiloxane, is about 8vol% or less by the compounds represented by the general formula. Atmospheric gas to be used is He, Ne or the like, for instance, the temperature of the support is controlled at about 150 deg.C or higher, and discharge power is controlled at about 100W or more.
JP56036267A 1981-03-12 1981-03-12 Production of photoconductive member Granted JPS57149466A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP56036267A JPS57149466A (en) 1981-03-12 1981-03-12 Production of photoconductive member
US06/354,898 US4468443A (en) 1981-03-12 1982-03-04 Process for producing photoconductive member from gaseous silicon compounds
DE19823209055 DE3209055A1 (en) 1981-03-12 1982-03-12 METHOD FOR PRODUCING A PHOTO-CONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56036267A JPS57149466A (en) 1981-03-12 1981-03-12 Production of photoconductive member

Publications (2)

Publication Number Publication Date
JPS57149466A true JPS57149466A (en) 1982-09-16
JPS6110036B2 JPS6110036B2 (en) 1986-03-27

Family

ID=12464987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56036267A Granted JPS57149466A (en) 1981-03-12 1981-03-12 Production of photoconductive member

Country Status (1)

Country Link
JP (1) JPS57149466A (en)

Also Published As

Publication number Publication date
JPS6110036B2 (en) 1986-03-27

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