DE3125470C2 - - Google Patents
Info
- Publication number
- DE3125470C2 DE3125470C2 DE3125470A DE3125470A DE3125470C2 DE 3125470 C2 DE3125470 C2 DE 3125470C2 DE 3125470 A DE3125470 A DE 3125470A DE 3125470 A DE3125470 A DE 3125470A DE 3125470 C2 DE3125470 C2 DE 3125470C2
- Authority
- DE
- Germany
- Prior art keywords
- mis
- effect transistor
- field effect
- signal input
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9011780A JPS5714216A (en) | 1980-06-30 | 1980-06-30 | Input protecting circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3125470A1 DE3125470A1 (de) | 1982-03-25 |
| DE3125470C2 true DE3125470C2 (OSRAM) | 1992-01-23 |
Family
ID=13989565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813125470 Granted DE3125470A1 (de) | 1980-06-30 | 1981-06-29 | Eingangsschutzbeschaltung fuer eine halbleitereinrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4456939A (OSRAM) |
| JP (1) | JPS5714216A (OSRAM) |
| DE (1) | DE3125470A1 (OSRAM) |
| FR (1) | FR2485808A1 (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19512190A1 (de) * | 1995-03-31 | 1996-10-02 | Siemens Ag | Schutzschaltung für eine integrierte Schaltung mit gesteuerter situationsabhängiger Schutzfestigkeit gegen Überspannungen (insb. Schutzfestigkeit vor und nach dem Einbau der integrierten Schaltung) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2289051A1 (fr) * | 1974-10-22 | 1976-05-21 | Ibm | Dispositifs a semi-conducteur du genre transistors a effet de champ et a porte isolee et circuits de protection cotre les surtensions |
| JPS5992557A (ja) * | 1982-11-18 | 1984-05-28 | Nec Corp | 入力保護回路付半導体集積回路 |
| JPS6155962A (ja) * | 1984-08-27 | 1986-03-20 | Oki Electric Ind Co Ltd | 電荷結合素子 |
| JPS62241429A (ja) * | 1986-04-14 | 1987-10-22 | Hitachi Ltd | 半導体集積回路装置 |
| US5016982A (en) * | 1986-07-22 | 1991-05-21 | Raychem Corporation | Liquid crystal display having a capacitor for overvoltage protection |
| US4739437A (en) * | 1986-10-22 | 1988-04-19 | Siemens-Pacesetter, Inc. | Pacemaker output switch protection |
| FR2624655B1 (fr) * | 1987-12-14 | 1990-05-11 | Sgs Thomson Microelectronics | Structure de protection d'un acces a un circuit integre |
| US4948992A (en) * | 1988-10-31 | 1990-08-14 | International Business Machines Corporation | Static method to negate offset voltages in CMOS operational amplifiers |
| JPH0834297B2 (ja) * | 1988-12-28 | 1996-03-29 | 三菱電機株式会社 | 半導体装置 |
| US5214562A (en) * | 1991-06-14 | 1993-05-25 | The United States Of America As Represented By The Secretary Of The Air Force | Electrostatic discharge protective circuit of shunting transistors |
| US5729419A (en) * | 1995-11-20 | 1998-03-17 | Integrated Device Technology, Inc. | Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same |
| JPH11103021A (ja) * | 1997-09-26 | 1999-04-13 | Seiko Instruments Inc | 保護回路および保護回路を用いた電子回路 |
| US6392364B1 (en) * | 1999-06-21 | 2002-05-21 | Denso Corporation | High voltage discharge lamp apparatus for vehicles |
| JP2001060663A (ja) * | 1999-08-20 | 2001-03-06 | Nec Corp | 半導体集積回路装置 |
| US6624992B1 (en) * | 2000-10-06 | 2003-09-23 | Qualcomm, Incorporated | Electro-static discharge protection circuit |
| JP2003060046A (ja) * | 2001-08-09 | 2003-02-28 | Murata Mfg Co Ltd | 半導体集積回路およびそれを用いた電子装置 |
| JP2009087962A (ja) * | 2007-09-27 | 2009-04-23 | Panasonic Corp | 保護回路及び半導体集積回路 |
| DE102015100398A1 (de) | 2015-01-13 | 2016-07-14 | Infineon Technologies Ag | Vorrichtung mit Chip und integrierter Schaltung |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL301883A (OSRAM) * | 1962-12-17 | |||
| US3360736A (en) * | 1963-09-10 | 1967-12-26 | Hitachi Ltd | Two input field effect transistor amplifier |
| US3403270A (en) * | 1965-05-10 | 1968-09-24 | Gen Micro Electronics Inc | Overvoltage protective circuit for insulated gate field effect transistor |
| US3445924A (en) * | 1965-06-30 | 1969-05-27 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characteristics |
| US3470390A (en) * | 1968-02-02 | 1969-09-30 | Westinghouse Electric Corp | Integrated back-to-back diodes to prevent breakdown of mis gate dielectric |
| US3636385A (en) * | 1970-02-13 | 1972-01-18 | Ncr Co | Protection circuit |
| JPS5122794B1 (OSRAM) * | 1970-06-24 | 1976-07-12 | ||
| DE2144436C2 (de) * | 1971-09-04 | 1983-01-20 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Festkörperschaltung zum Einstellen der effektiven Schwellenspannung eines Isolierschicht-Feldeffekttransistors |
| US3777216A (en) * | 1972-10-02 | 1973-12-04 | Motorola Inc | Avalanche injection input protection circuit |
| JPS5299786A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Mos integrated circuit |
| JPS5435756A (en) * | 1977-08-25 | 1979-03-16 | Mitsubishi Electric Corp | Photo switch |
| US4204131A (en) * | 1977-10-11 | 1980-05-20 | Mostek Corporation | Depletion controlled switch |
| JPS54146975A (en) * | 1978-05-10 | 1979-11-16 | Nec Corp | Protection circuit of semiconductor device |
| JPS5570071A (en) * | 1978-11-21 | 1980-05-27 | Mitsubishi Electric Corp | Mosic protective circuit |
| JPS577969A (en) * | 1980-06-18 | 1982-01-16 | Toshiba Corp | Semiconductor integrated circuit |
-
1980
- 1980-06-30 JP JP9011780A patent/JPS5714216A/ja active Pending
-
1981
- 1981-05-07 US US06/261,298 patent/US4456939A/en not_active Expired - Lifetime
- 1981-05-22 FR FR8110281A patent/FR2485808A1/fr active Pending
- 1981-06-29 DE DE19813125470 patent/DE3125470A1/de active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19512190A1 (de) * | 1995-03-31 | 1996-10-02 | Siemens Ag | Schutzschaltung für eine integrierte Schaltung mit gesteuerter situationsabhängiger Schutzfestigkeit gegen Überspannungen (insb. Schutzfestigkeit vor und nach dem Einbau der integrierten Schaltung) |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5714216A (en) | 1982-01-25 |
| DE3125470A1 (de) | 1982-03-25 |
| FR2485808A1 (fr) | 1981-12-31 |
| US4456939A (en) | 1984-06-26 |
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| DE3125470C2 (OSRAM) | ||
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: H02H 7/20 |
|
| 8125 | Change of the main classification |
Ipc: H02H 7/20 |
|
| 8125 | Change of the main classification |
Ipc: H01L 23/56 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |