DE69021749T2 - Überspannungsschutzsystem. - Google Patents
Überspannungsschutzsystem.Info
- Publication number
- DE69021749T2 DE69021749T2 DE69021749T DE69021749T DE69021749T2 DE 69021749 T2 DE69021749 T2 DE 69021749T2 DE 69021749 T DE69021749 T DE 69021749T DE 69021749 T DE69021749 T DE 69021749T DE 69021749 T2 DE69021749 T2 DE 69021749T2
- Authority
- DE
- Germany
- Prior art keywords
- protection system
- layer
- input
- oxide
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/311,270 US4930037A (en) | 1989-02-16 | 1989-02-16 | Input voltage protection system |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69021749D1 DE69021749D1 (de) | 1995-09-28 |
DE69021749T2 true DE69021749T2 (de) | 1996-02-29 |
Family
ID=23206169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69021749T Expired - Fee Related DE69021749T2 (de) | 1989-02-16 | 1990-01-31 | Überspannungsschutzsystem. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4930037A (de) |
EP (1) | EP0385581B1 (de) |
JP (1) | JPH02262374A (de) |
AT (1) | ATE126948T1 (de) |
DE (1) | DE69021749T2 (de) |
ES (1) | ES2077637T3 (de) |
GR (1) | GR3017631T3 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1314946C (en) * | 1989-02-01 | 1993-03-23 | Colin Harris | Protection of analog reference and bias voltage inputs |
US5159518A (en) * | 1990-01-17 | 1992-10-27 | Vlsi Technology, Inc. | Input protection circuit for CMOS devices |
US5396394A (en) * | 1990-02-06 | 1995-03-07 | International Business Machines Corp. | ISDN device line protection circuit |
US5561373A (en) * | 1990-10-09 | 1996-10-01 | Fujitsu Limited | Method and device for detecting electrostatic stress applied to a product semiconductor device during each production process |
KR920009015A (ko) * | 1990-10-29 | 1992-05-28 | 김광호 | 반도체 칩의 보호회로 |
EP0508975A1 (de) * | 1991-03-13 | 1992-10-14 | AUSTRIA MIKRO SYSTEME INTERNATIONAL GESELLSCHAFT m.b.H. (Austria Micro Systems International Gesellschaft m.b.H.) | Schutzschaltung für integrierte CMOS/BICMOS-Schaltungsanordnungen und Verfahren zur Herstellung einer derartigen Schutzschaltung |
JPH05121670A (ja) * | 1991-10-25 | 1993-05-18 | Nec Corp | 半導体入力保護装置 |
DE4135522C2 (de) * | 1991-10-28 | 1996-11-21 | Siemens Ag | Schaltungsanordnung zum Schutz integrierter Schaltkreise |
US5333093A (en) * | 1991-11-06 | 1994-07-26 | Siemens Aktiengesellschaft | Protection apparatus for series pass MOSFETS |
US5513064A (en) * | 1991-12-13 | 1996-04-30 | Texas Instruments Incorporated | Method and device for improving I/O ESD tolerance |
GB2273831B (en) * | 1992-12-24 | 1997-03-26 | Motorola Semiconducteurs | Voltage protection circuit |
JP2878587B2 (ja) * | 1993-10-20 | 1999-04-05 | 株式会社日立製作所 | 半導体装置 |
JPH07122650A (ja) * | 1993-10-22 | 1995-05-12 | Yamaha Corp | 半導体装置 |
US5473500A (en) * | 1994-01-13 | 1995-12-05 | Atmel Corporation | Electrostatic discharge circuit for high speed, high voltage circuitry |
DE69432662T2 (de) * | 1994-02-03 | 2004-03-25 | Infineon Technologies Ag | Schutzapparat für einen seriell-geschaltenen MOSFET |
WO1997035345A1 (en) * | 1996-03-20 | 1997-09-25 | National Semiconductor Corporation | Mosfet ic with on-chip protection against oxide damage caused by plasma-induced electrical charges |
US5748028A (en) * | 1996-10-31 | 1998-05-05 | International Business Machines Corporation | Method and apparatus for multi-level input voltage receiver circuit |
US5793592A (en) * | 1997-05-13 | 1998-08-11 | International Business Machines Corporation | Dynamic dielectric protection circuit for a receiver |
US5946175A (en) * | 1998-02-17 | 1999-08-31 | Winbond Electronics Corp. | Secondary ESD/EOS protection circuit |
KR100438669B1 (ko) * | 2001-12-31 | 2004-07-03 | 주식회사 하이닉스반도체 | 정전기 특성이 향상된 반도체 장치 |
US6900970B2 (en) * | 2003-01-22 | 2005-05-31 | Freescale Semiconductor, Inc. | Electrostatic discharge circuit and method therefor |
US6879476B2 (en) * | 2003-01-22 | 2005-04-12 | Freescale Semiconductor, Inc. | Electrostatic discharge circuit and method therefor |
JP2007081019A (ja) * | 2005-09-13 | 2007-03-29 | Oki Electric Ind Co Ltd | 半導体装置 |
US8488288B2 (en) * | 2008-06-27 | 2013-07-16 | National Instruments Corporation | Input protection method with variable tripping threshold and low parasitic elements |
US9151096B2 (en) * | 2009-09-20 | 2015-10-06 | Hanchett Entry Systems, Inc. | Access control device for a door |
US8228109B2 (en) | 2010-06-28 | 2012-07-24 | Freescale Semiconductor, Inc. | Transmission gate circuitry for high voltage terminal |
US9762052B2 (en) * | 2013-03-15 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and method of electrically decoupling nodes |
CN106160717B (zh) | 2015-04-03 | 2020-08-18 | 恩智浦美国有限公司 | 传输门电路 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3947727A (en) * | 1974-12-10 | 1976-03-30 | Rca Corporation | Protection circuit for insulated-gate field-effect transistors |
US4057844A (en) * | 1976-06-24 | 1977-11-08 | American Microsystems, Inc. | MOS input protection structure |
JPS5598867A (en) * | 1979-01-19 | 1980-07-28 | Mitsubishi Electric Corp | Protecting device |
US4760433A (en) * | 1986-01-31 | 1988-07-26 | Harris Corporation | ESD protection transistors |
SE455146B (sv) * | 1986-10-28 | 1988-06-20 | Ericsson Telefon Ab L M | Spenningsskyddskrets |
US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
JPH0748652B2 (ja) * | 1987-07-23 | 1995-05-24 | 三菱電機株式会社 | 半導体回路装置の入力保護装置 |
-
1989
- 1989-02-16 US US07/311,270 patent/US4930037A/en not_active Expired - Lifetime
-
1990
- 1990-01-31 AT AT90300998T patent/ATE126948T1/de not_active IP Right Cessation
- 1990-01-31 EP EP90300998A patent/EP0385581B1/de not_active Expired - Lifetime
- 1990-01-31 ES ES90300998T patent/ES2077637T3/es not_active Expired - Lifetime
- 1990-01-31 DE DE69021749T patent/DE69021749T2/de not_active Expired - Fee Related
- 1990-02-15 JP JP2035060A patent/JPH02262374A/ja active Pending
-
1995
- 1995-10-04 GR GR950402744T patent/GR3017631T3/el unknown
Also Published As
Publication number | Publication date |
---|---|
JPH02262374A (ja) | 1990-10-25 |
EP0385581A1 (de) | 1990-09-05 |
EP0385581B1 (de) | 1995-08-23 |
ATE126948T1 (de) | 1995-09-15 |
ES2077637T3 (es) | 1995-12-01 |
US4930037A (en) | 1990-05-29 |
DE69021749D1 (de) | 1995-09-28 |
GR3017631T3 (en) | 1996-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |