DE3125136A1 - Verfahren zur herstellung einer halbleiteranordnung - Google Patents

Verfahren zur herstellung einer halbleiteranordnung

Info

Publication number
DE3125136A1
DE3125136A1 DE19813125136 DE3125136A DE3125136A1 DE 3125136 A1 DE3125136 A1 DE 3125136A1 DE 19813125136 DE19813125136 DE 19813125136 DE 3125136 A DE3125136 A DE 3125136A DE 3125136 A1 DE3125136 A1 DE 3125136A1
Authority
DE
Germany
Prior art keywords
gas mixture
layer
plasma
vol
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813125136
Other languages
German (de)
English (en)
Other versions
DE3125136C2 (enExample
Inventor
Jan Dieleman
Franciscus Hubertus Marie Sanders
Jozef Alphons Marie 5621 Eindhoven Sanders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3125136A1 publication Critical patent/DE3125136A1/de
Application granted granted Critical
Publication of DE3125136C2 publication Critical patent/DE3125136C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Drying Of Semiconductors (AREA)
DE19813125136 1980-07-11 1981-06-26 Verfahren zur herstellung einer halbleiteranordnung Granted DE3125136A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004007A NL8004007A (nl) 1980-07-11 1980-07-11 Werkwijze voor het vervaardigen van een halfgeleider- inrichting.

Publications (2)

Publication Number Publication Date
DE3125136A1 true DE3125136A1 (de) 1982-03-04
DE3125136C2 DE3125136C2 (enExample) 1990-06-07

Family

ID=19835610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813125136 Granted DE3125136A1 (de) 1980-07-11 1981-06-26 Verfahren zur herstellung einer halbleiteranordnung

Country Status (8)

Country Link
US (1) US4381967A (enExample)
JP (2) JPS5749236A (enExample)
CA (1) CA1165903A (enExample)
DE (1) DE3125136A1 (enExample)
FR (1) FR2486715B1 (enExample)
GB (1) GB2081160B (enExample)
IE (1) IE52047B1 (enExample)
NL (1) NL8004007A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004008A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4708770A (en) * 1986-06-19 1987-11-24 Lsi Logic Corporation Planarized process for forming vias in silicon wafers
JPS63244848A (ja) * 1987-03-31 1988-10-12 Toshiba Corp ドライエツチング方法
US4836886A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Binary chlorofluorocarbon chemistry for plasma etching
RU2141701C1 (ru) * 1997-05-22 1999-11-20 Институт проблем технологии микроэлектроники и особочистых материалов РАН Способ плазмохимического травления кремнийсодержащих материалов
DE19819428C1 (de) * 1998-04-30 1999-11-18 Daimler Chrysler Ag Anzündelement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160690A (en) * 1977-03-31 1979-07-10 Tokyo Shibaura Electric Co., Ltd. Gas etching method and apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138850C (enExample) *
JPS5122637A (en) * 1974-08-20 1976-02-23 Fujitsu Ltd Kinzokuhimakuno etsuchinguhoho
JPS5289540A (en) * 1976-01-21 1977-07-27 Mitsubishi Electric Corp Etching gaseous mixture
JPS6019139B2 (ja) * 1976-07-26 1985-05-14 三菱電機株式会社 エツチング方法およびプラズマエツチング用混合物ガス
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160690A (en) * 1977-03-31 1979-07-10 Tokyo Shibaura Electric Co., Ltd. Gas etching method and apparatus

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Abstract zur JP-PS 53-14571 *
Coburn, J.W. und Kay, E.: "Abstract: Some chemical aspects of the fluorcarbon plasme etching of silicon and its compounds". In: J. Vac. Sci. Technol., 16(2), März/April 1979, S. 407 *
Flamm, D.L.: Measurements and Mechanisms of Etchant Production During the Plasma Oxidation of CF ¶4¶ and C¶2¶F¶6¶. In: Solid-State Technology, April 1979, S. 109-116 *
Perry, P.D. und Rodde, A.F.: Anisotropic Plasma Etching of Semiconductor Materials. In: Solid State Technology, April 1979, S. 125-132 *

Also Published As

Publication number Publication date
DE3125136C2 (enExample) 1990-06-07
GB2081160B (en) 1984-08-08
FR2486715B1 (fr) 1986-01-24
US4381967A (en) 1983-05-03
GB2081160A (en) 1982-02-17
JPS5749236A (en) 1982-03-23
FR2486715A1 (fr) 1982-01-15
CA1165903A (en) 1984-04-17
JPH02290020A (ja) 1990-11-29
JPH0237090B2 (enExample) 1990-08-22
JPH0359574B2 (enExample) 1991-09-11
IE811532L (en) 1982-01-11
IE52047B1 (en) 1987-05-27
NL8004007A (nl) 1982-02-01

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee