JPS5749236A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS5749236A
JPS5749236A JP56108064A JP10806481A JPS5749236A JP S5749236 A JPS5749236 A JP S5749236A JP 56108064 A JP56108064 A JP 56108064A JP 10806481 A JP10806481 A JP 10806481A JP S5749236 A JPS5749236 A JP S5749236A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing semiconductor
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56108064A
Other languages
English (en)
Other versions
JPH0237090B2 (ja
Inventor
Hiyuuberutasu M Furanshisukasu
Aruhonsu Marii Sandaasu Yozefu
Deiiruman Yan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS5749236A publication Critical patent/JPS5749236A/ja
Publication of JPH0237090B2 publication Critical patent/JPH0237090B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
JP56108064A 1980-07-11 1981-07-10 Method of producing semiconductor device Granted JPS5749236A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8004007A NL8004007A (nl) 1980-07-11 1980-07-11 Werkwijze voor het vervaardigen van een halfgeleider- inrichting.

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2090487A Division JPH02290020A (ja) 1980-07-11 1990-04-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5749236A true JPS5749236A (en) 1982-03-23
JPH0237090B2 JPH0237090B2 (ja) 1990-08-22

Family

ID=19835610

Family Applications (2)

Application Number Title Priority Date Filing Date
JP56108064A Granted JPS5749236A (en) 1980-07-11 1981-07-10 Method of producing semiconductor device
JP2090487A Granted JPH02290020A (ja) 1980-07-11 1990-04-06 半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2090487A Granted JPH02290020A (ja) 1980-07-11 1990-04-06 半導体装置の製造方法

Country Status (8)

Country Link
US (1) US4381967A (ja)
JP (2) JPS5749236A (ja)
CA (1) CA1165903A (ja)
DE (1) DE3125136A1 (ja)
FR (1) FR2486715B1 (ja)
GB (1) GB2081160B (ja)
IE (1) IE52047B1 (ja)
NL (1) NL8004007A (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8004008A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
GB2121198A (en) * 1982-05-26 1983-12-14 Philips Electronic Associated Plasma-etch resistant mask formation
JPS59163826A (ja) * 1983-03-08 1984-09-14 Toshiba Corp ドライエツチング方法
US4431477A (en) * 1983-07-05 1984-02-14 Matheson Gas Products, Inc. Plasma etching with nitrous oxide and fluoro compound gas mixture
US4615764A (en) * 1984-11-05 1986-10-07 Allied Corporation SF6/nitriding gas/oxidizer plasma etch system
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US4613400A (en) * 1985-05-20 1986-09-23 Applied Materials, Inc. In-situ photoresist capping process for plasma etching
US4708770A (en) * 1986-06-19 1987-11-24 Lsi Logic Corporation Planarized process for forming vias in silicon wafers
JPS63244848A (ja) * 1987-03-31 1988-10-12 Toshiba Corp ドライエツチング方法
US4836886A (en) * 1987-11-23 1989-06-06 International Business Machines Corporation Binary chlorofluorocarbon chemistry for plasma etching
DE19819428C1 (de) * 1998-04-30 1999-11-18 Daimler Chrysler Ag Anzündelement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE138850C (ja) *
JPS5122637A (en) * 1974-08-20 1976-02-23 Fujitsu Ltd Kinzokuhimakuno etsuchinguhoho
JPS5289540A (en) * 1976-01-21 1977-07-27 Mitsubishi Electric Corp Etching gaseous mixture
JPS6019139B2 (ja) * 1976-07-26 1985-05-14 三菱電機株式会社 エツチング方法およびプラズマエツチング用混合物ガス
JPS53121469A (en) * 1977-03-31 1978-10-23 Toshiba Corp Gas etching unit
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53112065A (en) * 1977-03-11 1978-09-30 Toshiba Corp Removing method of high molecular compound

Also Published As

Publication number Publication date
US4381967A (en) 1983-05-03
GB2081160A (en) 1982-02-17
GB2081160B (en) 1984-08-08
IE811532L (en) 1982-01-11
CA1165903A (en) 1984-04-17
JPH02290020A (ja) 1990-11-29
FR2486715B1 (fr) 1986-01-24
NL8004007A (nl) 1982-02-01
JPH0359574B2 (ja) 1991-09-11
FR2486715A1 (fr) 1982-01-15
JPH0237090B2 (ja) 1990-08-22
DE3125136C2 (ja) 1990-06-07
DE3125136A1 (de) 1982-03-04
IE52047B1 (en) 1987-05-27

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