DE3118839A1 - Trockenaetzverfahren - Google Patents

Trockenaetzverfahren

Info

Publication number
DE3118839A1
DE3118839A1 DE19813118839 DE3118839A DE3118839A1 DE 3118839 A1 DE3118839 A1 DE 3118839A1 DE 19813118839 DE19813118839 DE 19813118839 DE 3118839 A DE3118839 A DE 3118839A DE 3118839 A1 DE3118839 A1 DE 3118839A1
Authority
DE
Germany
Prior art keywords
gas
reaction chamber
etching
workpiece
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813118839
Other languages
German (de)
English (en)
Other versions
DE3118839C2 (cg-RX-API-DMAC10.html
Inventor
Shinya Tama Tokyo Iida
Hideo Tokyo Komatsu
Tatsumi Kodaira Tokyo Mizutani
Kazuyoshi Ohme Tokyo Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE3118839A1 publication Critical patent/DE3118839A1/de
Application granted granted Critical
Publication of DE3118839C2 publication Critical patent/DE3118839C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P50/267—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H10P50/242—
    • H10P50/268—
    • H10P50/283—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE19813118839 1980-05-14 1981-05-12 Trockenaetzverfahren Granted DE3118839A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6281580A JPS56158873A (en) 1980-05-14 1980-05-14 Dry etching method

Publications (2)

Publication Number Publication Date
DE3118839A1 true DE3118839A1 (de) 1982-02-18
DE3118839C2 DE3118839C2 (cg-RX-API-DMAC10.html) 1988-04-21

Family

ID=13211202

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813118839 Granted DE3118839A1 (de) 1980-05-14 1981-05-12 Trockenaetzverfahren

Country Status (3)

Country Link
US (1) US4412119A (cg-RX-API-DMAC10.html)
JP (1) JPS56158873A (cg-RX-API-DMAC10.html)
DE (1) DE3118839A1 (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149415A3 (en) * 1983-12-30 1985-08-14 International Business Machines Corporation Reactive plasma process for etching chromium films with high chromium oxide and glass impurity content
EP0212585A3 (en) * 1985-08-27 1988-04-27 International Business Machines Corporation Selective and anisotropic dry etching
FR2619578A1 (fr) * 1987-08-18 1989-02-24 Air Liquide Procede de gravure ionique reactive a basse tension d'autopolarisation par addition de gaz inertes

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58143528A (ja) * 1982-02-22 1983-08-26 Hitachi Ltd ドライエツチング法
JPS5945946A (ja) * 1982-09-06 1984-03-15 Toyota Central Res & Dev Lab Inc 中空糸状多孔質ガラスの製造法
JPS5974631A (ja) * 1982-10-22 1984-04-27 Hitachi Ltd ドライエツチング法及びそのための装置
US4654112A (en) * 1984-09-26 1987-03-31 Texas Instruments Incorporated Oxide etch
IT1213230B (it) * 1984-10-23 1989-12-14 Ates Componenti Elettron Processo planox a becco ridotto per la formazione di componenti elettronici integrati.
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
US4734157A (en) * 1985-08-27 1988-03-29 International Business Machines Corporation Selective and anisotropic dry etching
JPH0727889B2 (ja) * 1985-08-27 1995-03-29 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション プラズマ・エツチング方法
JPS6278726A (ja) * 1985-10-02 1987-04-11 Matsushita Electric Ind Co Ltd 平板状情報記録担体の記録・再生方法および平板状情報記録担体
IT1200785B (it) * 1985-10-14 1989-01-27 Sgs Microelettronica Spa Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico
JPS62216224A (ja) * 1986-03-17 1987-09-22 Fujitsu Ltd タングステンの選択成長方法
US5182234A (en) * 1986-03-21 1993-01-26 Advanced Power Technology, Inc. Profile tailored trench etch using a SF6 -O2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen
JPS62224687A (ja) * 1986-03-25 1987-10-02 Anelva Corp エツチング方法
US4767724A (en) * 1986-03-27 1988-08-30 General Electric Company Unframed via interconnection with dielectric etch stop
JP2669460B2 (ja) * 1986-10-29 1997-10-27 株式会社日立製作所 エツチング方法
WO1989007335A1 (en) * 1988-01-29 1989-08-10 The Government Of The United States As Represented Improved etching method for photoresists or polymers
US5007983A (en) * 1988-01-29 1991-04-16 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Etching method for photoresists or polymers
JP2939269B2 (ja) * 1989-05-24 1999-08-25 富士通株式会社 半導体装置の製造方法
US5413670A (en) * 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
JP3254064B2 (ja) * 1993-09-27 2002-02-04 株式会社半導体エネルギー研究所 プラズマ処理方法
US5759360A (en) * 1995-03-13 1998-06-02 Applied Materials, Inc. Wafer clean sputtering process
US5983828A (en) * 1995-10-13 1999-11-16 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
JPH10223607A (ja) * 1997-02-03 1998-08-21 Mitsubishi Electric Corp プラズマ処理装置
DE10045793C2 (de) * 2000-09-15 2002-07-18 Zeiss Carl Verfahren zum Strukturieren eines Substrats
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060105114A1 (en) * 2004-11-16 2006-05-18 White John M Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs
US7678710B2 (en) 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
TWI435376B (zh) 2006-09-26 2014-04-21 應用材料股份有限公司 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理
JP5028617B2 (ja) * 2007-01-18 2012-09-19 国立大学法人大阪大学 プラズマ処理装置及びプラズマ処理方法、並びに、フッ素含有高分子廃棄物処理方法
JP2015056441A (ja) * 2013-09-10 2015-03-23 株式会社東芝 半導体装置の製造方法
JP2016157793A (ja) 2015-02-24 2016-09-01 東京エレクトロン株式会社 エッチング方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2716592A1 (de) * 1976-04-15 1977-10-20 Hitachi Ltd Plasma-aetzvorrichtung
DE2930200A1 (de) * 1978-08-02 1980-02-21 Texas Instruments Inc Verfahren zum aetzen von metallfilmen mit einem gasplasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5437580A (en) * 1977-08-30 1979-03-20 Nec Corp Dry etching method and target film used for it
JPS5547381A (en) * 1978-09-29 1980-04-03 Fujitsu Ltd Plasma etching method
US4243476A (en) * 1979-06-29 1981-01-06 International Business Machines Corporation Modification of etch rates by solid masking materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2716592A1 (de) * 1976-04-15 1977-10-20 Hitachi Ltd Plasma-aetzvorrichtung
DE2930200A1 (de) * 1978-08-02 1980-02-21 Texas Instruments Inc Verfahren zum aetzen von metallfilmen mit einem gasplasma

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Z.: Solid State Technology, April 1979, H. 4, S. 117-124 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149415A3 (en) * 1983-12-30 1985-08-14 International Business Machines Corporation Reactive plasma process for etching chromium films with high chromium oxide and glass impurity content
EP0212585A3 (en) * 1985-08-27 1988-04-27 International Business Machines Corporation Selective and anisotropic dry etching
FR2619578A1 (fr) * 1987-08-18 1989-02-24 Air Liquide Procede de gravure ionique reactive a basse tension d'autopolarisation par addition de gaz inertes
EP0305268A1 (fr) * 1987-08-18 1989-03-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procédé de gravure ionique réactive à basse tension d'autopolarisation par addition de gaz inertes

Also Published As

Publication number Publication date
DE3118839C2 (cg-RX-API-DMAC10.html) 1988-04-21
JPS6352118B2 (cg-RX-API-DMAC10.html) 1988-10-18
JPS56158873A (en) 1981-12-07
US4412119A (en) 1983-10-25

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee