IT1200785B - Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico - Google Patents

Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Info

Publication number
IT1200785B
IT1200785B IT22468/85A IT2246885A IT1200785B IT 1200785 B IT1200785 B IT 1200785B IT 22468/85 A IT22468/85 A IT 22468/85A IT 2246885 A IT2246885 A IT 2246885A IT 1200785 B IT1200785 B IT 1200785B
Authority
IT
Italy
Prior art keywords
rie
ohmic metal
make ohmic
improved plasma
semiconductor contacts
Prior art date
Application number
IT22468/85A
Other languages
English (en)
Other versions
IT8522468A0 (it
Inventor
Fabio Gualandris
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22468/85A priority Critical patent/IT1200785B/it
Publication of IT8522468A0 publication Critical patent/IT8522468A0/it
Priority to EP86830254A priority patent/EP0219465B1/en
Priority to DE8686830254T priority patent/DE3681112D1/de
Priority to US06/907,342 priority patent/US4806199A/en
Priority to JP61245142A priority patent/JPH0821575B2/ja
Application granted granted Critical
Publication of IT1200785B publication Critical patent/IT1200785B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
IT22468/85A 1985-10-14 1985-10-14 Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico IT1200785B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT22468/85A IT1200785B (it) 1985-10-14 1985-10-14 Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico
EP86830254A EP0219465B1 (en) 1985-10-14 1986-09-15 Improved (rie) plasma etch process for making metal-semiconductor ohmic type contacts
DE8686830254T DE3681112D1 (de) 1985-10-14 1986-09-15 Plasmaaetzverfahren zur herstellung von metall-halbleiter-kontakte des ohmischen typs.
US06/907,342 US4806199A (en) 1985-10-14 1986-09-15 (RIE) Plasma process for making metal-semiconductor ohmic type contacts
JP61245142A JPH0821575B2 (ja) 1985-10-14 1986-10-14 金属と半導体間にオ−ム型接触を形成するための改良されたｒｉｅプラズマエツチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22468/85A IT1200785B (it) 1985-10-14 1985-10-14 Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Publications (2)

Publication Number Publication Date
IT8522468A0 IT8522468A0 (it) 1985-10-14
IT1200785B true IT1200785B (it) 1989-01-27

Family

ID=11196692

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22468/85A IT1200785B (it) 1985-10-14 1985-10-14 Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

Country Status (5)

Country Link
US (1) US4806199A (it)
EP (1) EP0219465B1 (it)
JP (1) JPH0821575B2 (it)
DE (1) DE3681112D1 (it)
IT (1) IT1200785B (it)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1201840B (it) * 1986-08-28 1989-02-02 Sgs Microelettronica Spa Procedimento per realizzare contatti ohmici metallo-semiconduttore
JPH0770523B2 (ja) * 1987-05-19 1995-07-31 日本電気株式会社 半導体装置の製造方法
KR910008983B1 (ko) * 1988-12-20 1991-10-26 현대전자산업 주식회사 비등방성 식각을 이용한 잔유물 제거방법
US5034091A (en) * 1990-04-27 1991-07-23 Hughes Aircraft Company Method of forming an electrical via structure
JP3185150B2 (ja) * 1991-03-15 2001-07-09 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
US5312717A (en) * 1992-09-24 1994-05-17 International Business Machines Corporation Residue free vertical pattern transfer with top surface imaging resists
DE4339465C2 (de) * 1993-11-19 1997-05-28 Gold Star Electronics Verfahren zur Behandlung der Oberfläche eines einer Trockenätzung ausgesetzten Siliciumsubstrats
US5750441A (en) * 1996-05-20 1998-05-12 Micron Technology, Inc. Mask having a tapered profile used during the formation of a semiconductor device
US5893757A (en) * 1997-01-13 1999-04-13 Applied Komatsu Technology, Inc. Tapered profile etching method
US6875371B1 (en) 1998-06-22 2005-04-05 Micron Technology, Inc. Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby
US7173339B1 (en) 1998-06-22 2007-02-06 Micron Technology, Inc. Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure
US6117791A (en) * 1998-06-22 2000-09-12 Micron Technology, Inc. Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby
US6281142B1 (en) * 1999-06-04 2001-08-28 Micron Technology, Inc. Dielectric cure for reducing oxygen vacancies
JP4896367B2 (ja) * 2003-10-23 2012-03-14 パナソニック株式会社 電子部品の処理方法及び装置
WO2013092759A2 (en) * 2011-12-21 2013-06-27 Solvay Sa Method for etching of sio2 layers on thin wafers
CN103779271B (zh) * 2012-10-26 2017-04-05 中微半导体设备(上海)有限公司 一种倒锥形轮廓刻蚀方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
US4349409A (en) * 1980-05-12 1982-09-14 Fujitsu Limited Method and apparatus for plasma etching
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
DE3103177A1 (de) * 1981-01-30 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von polysiliziumstrukturen bis in den 1 (my)m-bereich auf integrierte halbleiterschaltungen enthaltenden substraten durch plasmaaetzen
US4599243A (en) * 1982-12-23 1986-07-08 International Business Machines Corporation Use of plasma polymerized organosilicon films in fabrication of lift-off masks
US4534826A (en) * 1983-12-29 1985-08-13 Ibm Corporation Trench etch process for dielectric isolation
US4484979A (en) * 1984-04-16 1984-11-27 At&T Bell Laboratories Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
US4582581A (en) * 1985-05-09 1986-04-15 Allied Corporation Boron trifluoride system for plasma etching of silicon dioxide
US4631248A (en) * 1985-06-21 1986-12-23 Lsi Logic Corporation Method for forming an electrical contact in an integrated circuit
US4687543A (en) * 1986-02-21 1987-08-18 Tegal Corporation Selective plasma etching during formation of integrated circuitry

Also Published As

Publication number Publication date
US4806199A (en) 1989-02-21
JPS6289333A (ja) 1987-04-23
EP0219465A2 (en) 1987-04-22
JPH0821575B2 (ja) 1996-03-04
DE3681112D1 (de) 1991-10-02
EP0219465B1 (en) 1991-08-28
IT8522468A0 (it) 1985-10-14
EP0219465A3 (en) 1988-03-30

Similar Documents

Publication Publication Date Title
IT1200785B (it) Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico
IT8620389A1 (it) Interruttore bipolare con protezione di terra
IT1218191B (it) Dispositivo di rilevamento di corrente elettrica
DK265286A (da) Lysbueelektrode
DE3788791D1 (de) Elektrisch leitendes Einwegerdungsband.
NO863663D0 (no) Elektrisk ledende undervannskopling.
DK280886D0 (da) Dobbeltvirkende elektrisk kontaktor for store stroemstyrker
DK446887D0 (da) Elektrisk kontakteringsapparat med kontaktbeskyttelsesorgan
IT1188458B (it) Interruttore elettrico di sicurezza
DK32387D0 (da) Staerkstroemsterminal
IT1185964B (it) Procedimento e relativa apparecchiatura per realizzare contatti metallo-semiconduttore di tipo ohmico
GB2176947B (en) Improvements in or relating to electrically conductive members
IT8667753A0 (it) Connettore elettrico di sicurezza
IT1235253B (it) Dispositivo per spelare conduttori elettrici.
IT1201840B (it) Procedimento per realizzare contatti ohmici metallo-semiconduttore
IT1204939B (it) Interruttore limitatore di corrente
IT8521053V0 (it) Struttura di interruttore elettrico per impianti elettrici in genere.
GB8706562D0 (en) Conducting current to electrode
KR860013404U (ko) 전기 전철기
MX159509A (es) Mejoras en interruptor electrico
BR6501898U (pt) Disposicao construtiva em isolador aplicado em pinca bipolar
BR6500030U (pt) Chave seccionadora
IT8519812A0 (it) Struttura di interruttore elettrico per impianti elettrici in genere
BR8602535A (pt) Conector de conducao de corrente para o fornecimento eletrico as instalacoes protetoras de impacto"gassack"
IT8567679A0 (it) Quadro elettrico di tipo perfezionato

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971030