DE3107943C2 - - Google Patents
Info
- Publication number
- DE3107943C2 DE3107943C2 DE3107943A DE3107943A DE3107943C2 DE 3107943 C2 DE3107943 C2 DE 3107943C2 DE 3107943 A DE3107943 A DE 3107943A DE 3107943 A DE3107943 A DE 3107943A DE 3107943 C2 DE3107943 C2 DE 3107943C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- aluminum
- copper
- oxidation
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 claims description 76
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 239000012790 adhesive layer Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 238000005260 corrosion Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000005496 tempering Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 claims 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
- H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813107943 DE3107943A1 (de) | 1981-03-02 | 1981-03-02 | Verfahren zur herstellung von loetbaren und temperfaehigen edelmetallfreien duennschichtleiterbahnen |
| US06/346,100 US4372809A (en) | 1981-03-02 | 1982-02-05 | Method for manufacturing solderable, temperable, thin film tracks which do not contain precious metal |
| JP57032184A JPS57157594A (en) | 1981-03-02 | 1982-03-01 | Method of producing thin film conductor path including no noble metal |
| EP82101568A EP0060436A1 (de) | 1981-03-02 | 1982-03-01 | Verfahren zur Herstellung von lötbaren und temperfähigen edelmetallfreien Dünnschichtleiterbahnen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19813107943 DE3107943A1 (de) | 1981-03-02 | 1981-03-02 | Verfahren zur herstellung von loetbaren und temperfaehigen edelmetallfreien duennschichtleiterbahnen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3107943A1 DE3107943A1 (de) | 1982-09-16 |
| DE3107943C2 true DE3107943C2 (en:Method) | 1990-10-31 |
Family
ID=6126178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813107943 Granted DE3107943A1 (de) | 1981-03-02 | 1981-03-02 | Verfahren zur herstellung von loetbaren und temperfaehigen edelmetallfreien duennschichtleiterbahnen |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4372809A (en:Method) |
| EP (1) | EP0060436A1 (en:Method) |
| JP (1) | JPS57157594A (en:Method) |
| DE (1) | DE3107943A1 (en:Method) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19945914C1 (de) * | 1999-09-24 | 2001-08-30 | Siemens Ag | Verfahren zur Erzeugung von präzisen Lötflächen auf einem Schaltungsträger, insbesondere Dünnfilm-Substrat |
| DE10238816A1 (de) * | 2002-08-23 | 2004-03-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Anschlussbereichen einer integrierten Schaltung und integrierte Schaltung mit Anschlussbereichen |
| DE10241589A1 (de) * | 2002-09-05 | 2004-03-25 | Infineon Technologies Ag | Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern |
| DE10320561A1 (de) * | 2003-05-07 | 2004-12-09 | Infineon Technologies Ag | Verbindung zwischen einem Halbleiterchip und einer äußeren Leiterstruktur und Verfahren zu ihrer Herstellung |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4482913A (en) * | 1982-02-24 | 1984-11-13 | Westinghouse Electric Corp. | Semiconductor device soldered to a graphite substrate |
| US4620215A (en) * | 1982-04-16 | 1986-10-28 | Amdahl Corporation | Integrated circuit packaging systems with double surface heat dissipation |
| DE3312725A1 (de) * | 1983-04-08 | 1984-10-11 | Siemens AG, 1000 Berlin und 8000 München | Bond- und loetbare duennschichtleiterbahnen mit durchkontaktierungen |
| JPS60184092A (ja) | 1984-03-01 | 1985-09-19 | Kao Corp | リン酸エステルおよびその製法 |
| DE3438028A1 (de) * | 1984-10-17 | 1986-04-24 | Siemens AG, 1000 Berlin und 8000 München | Duennfilmschaltungen mit integrierten nickelchrom-widerstaenden |
| US4716049A (en) * | 1985-12-20 | 1987-12-29 | Hughes Aircraft Company | Compressive pedestal for microminiature connections |
| JPH0376190A (ja) * | 1989-08-18 | 1991-04-02 | Fujitsu Ltd | 薄膜回路基板 |
| US5138431A (en) * | 1990-01-31 | 1992-08-11 | Vlsi Technology, Inc. | Lead and socket structures with reduced self-inductance |
| JPH03233972A (ja) * | 1990-02-08 | 1991-10-17 | Matsushita Electron Corp | 半導体装置用電極およびその製造方法 |
| US5126283A (en) * | 1990-05-21 | 1992-06-30 | Motorola, Inc. | Process for the selective encapsulation of an electrically conductive structure in a semiconductor device |
| US5164332A (en) * | 1991-03-15 | 1992-11-17 | Microelectronics And Computer Technology Corporation | Diffusion barrier for copper features |
| JP3106786B2 (ja) * | 1993-08-26 | 2000-11-06 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| JP2000114302A (ja) * | 1998-10-08 | 2000-04-21 | Fuji Electric Co Ltd | 半導体装置 |
| US6347175B1 (en) | 1999-07-14 | 2002-02-12 | Corning Incorporated | Solderable thin film |
| US9113583B2 (en) * | 2012-07-31 | 2015-08-18 | General Electric Company | Electronic circuit board, assembly and a related method thereof |
| JP6246925B2 (ja) * | 2013-07-29 | 2017-12-13 | フエロ コーポレーション | 導電トレースを形成する方法 |
| TWI719241B (zh) * | 2017-08-18 | 2021-02-21 | 景碩科技股份有限公司 | 可做電性測試的多層電路板及其製法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1790013B1 (de) * | 1968-08-27 | 1971-11-25 | Siemens Ag | Elektrische duennschichtschaltung |
| DE7106898U (de) * | 1970-03-06 | 1971-05-27 | Motorola Inc | Integrierter Hybrid Schaltkreis |
| DD102035A1 (en:Method) * | 1973-02-02 | 1973-11-20 | ||
| US3881884A (en) * | 1973-10-12 | 1975-05-06 | Ibm | Method for the formation of corrosion resistant electronic interconnections |
| DE2554691C2 (de) * | 1974-12-10 | 1982-11-18 | Western Electric Co., Inc., 10038 New York, N.Y. | Verfahren zum Herstellen elektrischer Leiter auf einem isolierenden Substrat und danach hergestellte Dünnschichtschaltung |
| DE2522944C3 (de) * | 1975-05-23 | 1980-11-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer elektrischen Dünnfilmschaltung |
| JPS525470A (en) * | 1975-07-01 | 1977-01-17 | Sumitomo Bakelite Co | Method of manufacturing printed circuit substrate |
| DE2550512A1 (de) * | 1975-11-11 | 1977-05-12 | Bosch Gmbh Robert | Verfahren zur herstellung einer metallisierung auf einem substrat |
| DE2606086C3 (de) * | 1976-02-16 | 1980-08-14 | Bernd Dr.-Ing. 7250 Leonberg Kaiser | Herstellung von integrierten Dünnschichtschaltungen aus mit dünnen Schichten mehrlagig beschichteter Unterlage |
| JPS5533196A (en) * | 1979-08-20 | 1980-03-08 | Showa Electric Wire & Cable Co Ltd | Splicing method of optical fiber cable |
-
1981
- 1981-03-02 DE DE19813107943 patent/DE3107943A1/de active Granted
-
1982
- 1982-02-05 US US06/346,100 patent/US4372809A/en not_active Expired - Fee Related
- 1982-03-01 JP JP57032184A patent/JPS57157594A/ja active Granted
- 1982-03-01 EP EP82101568A patent/EP0060436A1/de not_active Withdrawn
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19945914C1 (de) * | 1999-09-24 | 2001-08-30 | Siemens Ag | Verfahren zur Erzeugung von präzisen Lötflächen auf einem Schaltungsträger, insbesondere Dünnfilm-Substrat |
| DE10238816A1 (de) * | 2002-08-23 | 2004-03-11 | Infineon Technologies Ag | Verfahren zur Herstellung von Anschlussbereichen einer integrierten Schaltung und integrierte Schaltung mit Anschlussbereichen |
| DE10238816B4 (de) * | 2002-08-23 | 2008-01-10 | Qimonda Ag | Verfahren zur Herstellung von Anschlussbereichen einer integrierten Schaltung und integrierte Schaltung mit Anschlussbereichen |
| DE10241589A1 (de) * | 2002-09-05 | 2004-03-25 | Infineon Technologies Ag | Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern |
| DE10241589B4 (de) * | 2002-09-05 | 2007-11-22 | Qimonda Ag | Verfahren zur Lötstopp-Strukturierung von Erhebungen auf Wafern |
| DE10320561A1 (de) * | 2003-05-07 | 2004-12-09 | Infineon Technologies Ag | Verbindung zwischen einem Halbleiterchip und einer äußeren Leiterstruktur und Verfahren zu ihrer Herstellung |
| US7169647B2 (en) | 2003-05-07 | 2007-01-30 | Infineon Technologies Ag | Connection between a semiconductor chip and an external conductor structure and method for producing it |
| DE10320561B4 (de) * | 2003-05-07 | 2007-12-06 | Qimonda Ag | Verfahren zur Herstellung einer leitfähigen Verbindung zwischen einem Halbleiterchip und einer äußeren Leiterstruktur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0235475B2 (en:Method) | 1990-08-10 |
| JPS57157594A (en) | 1982-09-29 |
| EP0060436A1 (de) | 1982-09-22 |
| DE3107943A1 (de) | 1982-09-16 |
| US4372809A (en) | 1983-02-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |