DE3104960A1 - "feinstdraht" - Google Patents

"feinstdraht"

Info

Publication number
DE3104960A1
DE3104960A1 DE19813104960 DE3104960A DE3104960A1 DE 3104960 A1 DE3104960 A1 DE 3104960A1 DE 19813104960 DE19813104960 DE 19813104960 DE 3104960 A DE3104960 A DE 3104960A DE 3104960 A1 DE3104960 A1 DE 3104960A1
Authority
DE
Germany
Prior art keywords
copper
weight
fine wire
aluminum
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813104960
Other languages
German (de)
English (en)
Other versions
DE3104960C2 (da
Inventor
Fritz Dipl.-Ing. Dr. 6458 Rodenbach Aldinger
Albrecht Dipl.-Phys. Dr. 6454 Bruchköbel Bischoff
Wolfgang 6052 Mühlheim Bonifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE3153395A priority Critical patent/DE3153395C2/de
Priority to DE19813104960 priority patent/DE3104960A1/de
Priority to GB8135741A priority patent/GB2093064B/en
Priority to CH79/82A priority patent/CH652532A5/de
Priority to FR8202254A priority patent/FR2499767A1/fr
Priority to JP57019859A priority patent/JPS57149744A/ja
Publication of DE3104960A1 publication Critical patent/DE3104960A1/de
Application granted granted Critical
Publication of DE3104960C2 publication Critical patent/DE3104960C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
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    • H01L2224/05617Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624Aluminium [Al] as principal constituent
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
DE19813104960 1981-02-12 1981-02-12 "feinstdraht" Granted DE3104960A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE3153395A DE3153395C2 (en) 1981-02-12 1981-02-12 Use of a very fine wire made of a copper/tin alloy
DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"
GB8135741A GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals
CH79/82A CH652532A5 (de) 1981-02-12 1982-01-07 Verwendung eines feinstdrahtes fuer die herstellung der aussenanschluesse von halbleiter-bauelementen.
FR8202254A FR2499767A1 (fr) 1981-02-12 1982-02-11 Application d'un fil metallique extra-fin a la realisation des connexions exterieures de composants a semi-conducteurs
JP57019859A JPS57149744A (en) 1981-02-12 1982-02-12 Extrafine wire

Applications Claiming Priority (1)

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DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"

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DE3104960A1 true DE3104960A1 (de) 1982-08-26
DE3104960C2 DE3104960C2 (da) 1987-09-24

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DE (1) DE3104960A1 (da)
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GB (1) GB2093064B (da)

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DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile

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US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (ja) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd 乾燥庫
JPH0716797U (ja) * 1993-08-27 1995-03-20 武盛 豊永 除湿機付高温衣類乾燥機
JP2501303B2 (ja) * 1994-04-11 1996-05-29 株式会社東芝 半導体装置
JP2501305B2 (ja) * 1994-06-06 1996-05-29 株式会社東芝 半導体装置
JP2501306B2 (ja) * 1994-07-08 1996-05-29 株式会社東芝 半導体装置
DE19606116A1 (de) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Elektrische Kontaktelemente
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
WO2006073206A1 (ja) 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤ

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DE3023528A1 (de) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
US6799711B2 (en) 2002-01-07 2004-10-05 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE112017008353B3 (de) 2016-06-20 2022-09-29 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
DE102018122574B4 (de) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Verwendung einer Kupferlegierung
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
US11715719B2 (en) 2019-05-17 2023-08-01 Infineon Technologies Ag Semiconductor package and method of forming a semiconductor package

Also Published As

Publication number Publication date
GB2093064B (en) 1984-10-31
GB2093064A (en) 1982-08-25
CH652532A5 (de) 1985-11-15
FR2499767A1 (fr) 1982-08-13
DE3104960C2 (da) 1987-09-24
JPS57149744A (en) 1982-09-16
FR2499767B3 (da) 1984-01-06
JPH0237095B2 (da) 1990-08-22

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