DE3104108C2 - Wäßriges saures Bad und Verfahren zur galvanischen Abscheidung von glänzenden Kupferüberzügen - Google Patents
Wäßriges saures Bad und Verfahren zur galvanischen Abscheidung von glänzenden KupferüberzügenInfo
- Publication number
- DE3104108C2 DE3104108C2 DE3104108A DE3104108A DE3104108C2 DE 3104108 C2 DE3104108 C2 DE 3104108C2 DE 3104108 A DE3104108 A DE 3104108A DE 3104108 A DE3104108 A DE 3104108A DE 3104108 C2 DE3104108 C2 DE 3104108C2
- Authority
- DE
- Germany
- Prior art keywords
- bath
- deep
- low
- bath according
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 29
- 239000010949 copper Substances 0.000 title claims abstract description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 238000000576 coating method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 8
- 238000009713 electroplating Methods 0.000 title claims abstract description 7
- 239000011260 aqueous acid Substances 0.000 title 1
- 229920000570 polyether Polymers 0.000 claims abstract description 11
- 230000002378 acidificating effect Effects 0.000 claims abstract description 8
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical group N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000005077 polysulfide Substances 0.000 claims abstract description 6
- 229920001021 polysulfide Polymers 0.000 claims abstract description 6
- 150000008117 polysulfides Polymers 0.000 claims abstract description 6
- -1 halogen ions Chemical class 0.000 claims description 23
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical class [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- 125000003118 aryl group Chemical group 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000003710 aryl alkyl group Chemical group 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- SBXFGBBTYRHJFF-UHFFFAOYSA-N diamino sulfate Chemical compound NOS(=O)(=O)ON SBXFGBBTYRHJFF-UHFFFAOYSA-N 0.000 claims 1
- 125000005843 halogen group Chemical group 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 125000004437 phosphorous atom Chemical group 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000000654 additive Substances 0.000 abstract description 12
- 150000003568 thioethers Chemical class 0.000 abstract description 7
- 125000001931 aliphatic group Chemical group 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 238000005282 brightening Methods 0.000 abstract 1
- 239000012086 standard solution Substances 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 6
- 238000013019 agitation Methods 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 4
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 125000002947 alkylene group Chemical group 0.000 description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 3
- 229910052794 bromium Inorganic materials 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 229920002873 Polyethylenimine Polymers 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229940042400 direct acting antivirals phosphonic acid derivative Drugs 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- 150000008116 organic polysulfides Chemical class 0.000 description 2
- 150000002989 phenols Chemical class 0.000 description 2
- 150000003007 phosphonic acid derivatives Chemical class 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 239000001117 sulphuric acid Substances 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- VEPOHXYIFQMVHW-XOZOLZJESA-N 2,3-dihydroxybutanedioic acid (2S,3S)-3,4-dimethyl-2-phenylmorpholine Chemical compound OC(C(O)C(O)=O)C(O)=O.C[C@H]1[C@@H](OCCN1C)c1ccccc1 VEPOHXYIFQMVHW-XOZOLZJESA-N 0.000 description 1
- RILZRCJGXSFXNE-UHFFFAOYSA-N 2-[4-(trifluoromethoxy)phenyl]ethanol Chemical compound OCCC1=CC=C(OC(F)(F)F)C=C1 RILZRCJGXSFXNE-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229940100198 alkylating agent Drugs 0.000 description 1
- 239000002168 alkylating agent Substances 0.000 description 1
- KCXMKQUNVWSEMD-UHFFFAOYSA-N benzyl chloride Chemical compound ClCC1=CC=CC=C1 KCXMKQUNVWSEMD-UHFFFAOYSA-N 0.000 description 1
- 229940073608 benzyl chloride Drugs 0.000 description 1
- 229950011260 betanaphthol Drugs 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- LEKPFOXEZRZPGW-UHFFFAOYSA-N copper;dicyanide Chemical compound [Cu+2].N#[C-].N#[C-] LEKPFOXEZRZPGW-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical group 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920000847 nonoxynol Polymers 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical class CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000005515 organic divalent group Chemical group 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 150000003558 thiocarbamic acid derivatives Chemical class 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/122,204 US4272335A (en) | 1980-02-19 | 1980-02-19 | Composition and method for electrodeposition of copper |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3104108A1 DE3104108A1 (de) | 1982-02-18 |
DE3104108C2 true DE3104108C2 (de) | 1987-02-05 |
Family
ID=22401309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3104108A Expired DE3104108C2 (de) | 1980-02-19 | 1981-02-06 | Wäßriges saures Bad und Verfahren zur galvanischen Abscheidung von glänzenden Kupferüberzügen |
Country Status (14)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4032864A1 (de) * | 1990-10-13 | 1992-04-16 | Schering Ag | Saures bad zur galvanischen abscheidung von kupferueberzuegen und verfahren unter verwendung dieser kombination |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4336114A (en) * | 1981-03-26 | 1982-06-22 | Hooker Chemicals & Plastics Corp. | Electrodeposition of bright copper |
AU559896B2 (en) * | 1983-06-10 | 1987-03-26 | Omi International Corp. | Electrolytic copper depositing processes |
AU554236B2 (en) * | 1983-06-10 | 1986-08-14 | Omi International Corp. | Electrolyte composition and process for electrodepositing copper |
US4555315A (en) * | 1984-05-29 | 1985-11-26 | Omi International Corporation | High speed copper electroplating process and bath therefor |
US4667049A (en) * | 1984-11-02 | 1987-05-19 | Etd Technology Inc. | Method of making dialkylamino-thioxomethyl-thioalkanesulfonic acid compounds |
US4786746A (en) * | 1987-09-18 | 1988-11-22 | Pennsylvania Research Corporation | Copper electroplating solutions and methods of making and using them |
US4948474A (en) * | 1987-09-18 | 1990-08-14 | Pennsylvania Research Corporation | Copper electroplating solutions and methods |
US5112464A (en) * | 1990-06-15 | 1992-05-12 | The Dow Chemical Company | Apparatus to control reverse current flow in membrane electrolytic cells |
US5730854A (en) * | 1996-05-30 | 1998-03-24 | Enthone-Omi, Inc. | Alkoxylated dimercaptans as copper additives and de-polarizing additives |
US6024857A (en) | 1997-10-08 | 2000-02-15 | Novellus Systems, Inc. | Electroplating additive for filling sub-micron features |
US7244677B2 (en) | 1998-02-04 | 2007-07-17 | Semitool. Inc. | Method for filling recessed micro-structures with metallization in the production of a microelectronic device |
TW593731B (en) | 1998-03-20 | 2004-06-21 | Semitool Inc | Apparatus for applying a metal structure to a workpiece |
US6197181B1 (en) * | 1998-03-20 | 2001-03-06 | Semitool, Inc. | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece |
US6565729B2 (en) | 1998-03-20 | 2003-05-20 | Semitool, Inc. | Method for electrochemically depositing metal on a semiconductor workpiece |
KR100694562B1 (ko) * | 1998-08-11 | 2007-03-13 | 가부시키가이샤 에바라 세이사꾸쇼 | 기판 도금방법 및 장치 |
US6946065B1 (en) * | 1998-10-26 | 2005-09-20 | Novellus Systems, Inc. | Process for electroplating metal into microscopic recessed features |
US6919010B1 (en) | 2001-06-28 | 2005-07-19 | Novellus Systems, Inc. | Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction |
US6793796B2 (en) * | 1998-10-26 | 2004-09-21 | Novellus Systems, Inc. | Electroplating process for avoiding defects in metal features of integrated circuit devices |
US6379522B1 (en) * | 1999-01-11 | 2002-04-30 | Applied Materials, Inc. | Electrodeposition chemistry for filling of apertures with reflective metal |
US6544399B1 (en) | 1999-01-11 | 2003-04-08 | Applied Materials, Inc. | Electrodeposition chemistry for filling apertures with reflective metal |
US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
US6406609B1 (en) * | 2000-02-25 | 2002-06-18 | Agere Systems Guardian Corp. | Method of fabricating an integrated circuit |
US8308931B2 (en) * | 2006-08-16 | 2012-11-13 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US8475636B2 (en) * | 2008-11-07 | 2013-07-02 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US6491806B1 (en) * | 2000-04-27 | 2002-12-10 | Intel Corporation | Electroplating bath composition |
US6527920B1 (en) | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
US7622024B1 (en) * | 2000-05-10 | 2009-11-24 | Novellus Systems, Inc. | High resistance ionic current source |
US6821407B1 (en) | 2000-05-10 | 2004-11-23 | Novellus Systems, Inc. | Anode and anode chamber for copper electroplating |
KR100366631B1 (ko) * | 2000-09-27 | 2003-01-09 | 삼성전자 주식회사 | 폴리비닐피롤리돈을 포함하는 구리도금 전해액 및 이를이용한 반도체 소자의 구리배선용 전기도금방법 |
US7682498B1 (en) | 2001-06-28 | 2010-03-23 | Novellus Systems, Inc. | Rotationally asymmetric variable electrode correction |
US7025866B2 (en) * | 2002-08-21 | 2006-04-11 | Micron Technology, Inc. | Microelectronic workpiece for electrochemical deposition processing and methods of manufacturing and using such microelectronic workpieces |
US20050092611A1 (en) * | 2003-11-03 | 2005-05-05 | Semitool, Inc. | Bath and method for high rate copper deposition |
US20050230262A1 (en) * | 2004-04-20 | 2005-10-20 | Semitool, Inc. | Electrochemical methods for the formation of protective features on metallized features |
US8623193B1 (en) | 2004-06-16 | 2014-01-07 | Novellus Systems, Inc. | Method of electroplating using a high resistance ionic current source |
JP4636563B2 (ja) * | 2004-11-24 | 2011-02-23 | 住友電気工業株式会社 | 溶融塩浴および金属析出物の製造方法 |
US20070158199A1 (en) * | 2005-12-30 | 2007-07-12 | Haight Scott M | Method to modulate the surface roughness of a plated deposit and create fine-grained flat bumps |
US7799684B1 (en) | 2007-03-05 | 2010-09-21 | Novellus Systems, Inc. | Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers |
US7887693B2 (en) * | 2007-06-22 | 2011-02-15 | Maria Nikolova | Acid copper electroplating bath composition |
US8513124B1 (en) | 2008-03-06 | 2013-08-20 | Novellus Systems, Inc. | Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers |
US7964506B1 (en) | 2008-03-06 | 2011-06-21 | Novellus Systems, Inc. | Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers |
US8703615B1 (en) | 2008-03-06 | 2014-04-22 | Novellus Systems, Inc. | Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers |
US10011917B2 (en) | 2008-11-07 | 2018-07-03 | Lam Research Corporation | Control of current density in an electroplating apparatus |
US11225727B2 (en) | 2008-11-07 | 2022-01-18 | Lam Research Corporation | Control of current density in an electroplating apparatus |
US8475637B2 (en) * | 2008-12-17 | 2013-07-02 | Novellus Systems, Inc. | Electroplating apparatus with vented electrolyte manifold |
US8262871B1 (en) | 2008-12-19 | 2012-09-11 | Novellus Systems, Inc. | Plating method and apparatus with multiple internally irrigated chambers |
US8500983B2 (en) | 2009-05-27 | 2013-08-06 | Novellus Systems, Inc. | Pulse sequence for plating on thin seed layers |
US9385035B2 (en) | 2010-05-24 | 2016-07-05 | Novellus Systems, Inc. | Current ramping and current pulsing entry of substrates for electroplating |
US8795480B2 (en) | 2010-07-02 | 2014-08-05 | Novellus Systems, Inc. | Control of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9624592B2 (en) | 2010-07-02 | 2017-04-18 | Novellus Systems, Inc. | Cross flow manifold for electroplating apparatus |
US10233556B2 (en) | 2010-07-02 | 2019-03-19 | Lam Research Corporation | Dynamic modulation of cross flow manifold during electroplating |
US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US10094034B2 (en) | 2015-08-28 | 2018-10-09 | Lam Research Corporation | Edge flow element for electroplating apparatus |
US9572953B2 (en) * | 2010-12-30 | 2017-02-21 | St. Jude Medical, Atrial Fibrillation Division, Inc. | Device having an electroformed pleated region and method of its manufacture |
US8575028B2 (en) | 2011-04-15 | 2013-11-05 | Novellus Systems, Inc. | Method and apparatus for filling interconnect structures |
US9028666B2 (en) | 2011-05-17 | 2015-05-12 | Novellus Systems, Inc. | Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath |
US9670588B2 (en) | 2013-05-01 | 2017-06-06 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
US9449808B2 (en) | 2013-05-29 | 2016-09-20 | Novellus Systems, Inc. | Apparatus for advanced packaging applications |
US9677190B2 (en) | 2013-11-01 | 2017-06-13 | Lam Research Corporation | Membrane design for reducing defects in electroplating systems |
US9816194B2 (en) | 2015-03-19 | 2017-11-14 | Lam Research Corporation | Control of electrolyte flow dynamics for uniform electroplating |
US10014170B2 (en) | 2015-05-14 | 2018-07-03 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL46961C (US20100268047A1-20101021-C00003.png) * | 1936-12-22 | |||
NL291575A (US20100268047A1-20101021-C00003.png) * | 1962-04-16 | |||
DE1569739A1 (de) * | 1965-11-12 | 1970-11-05 | Bayer Ag | Phthalocyanin-Reaktivfarbstoffe und Verfahren zu deren Herstellung |
US3328273A (en) * | 1966-08-15 | 1967-06-27 | Udylite Corp | Electro-deposition of copper from acidic baths |
DE2506832C3 (de) * | 1975-02-18 | 1978-10-05 | Basf Ag, 6700 Ludwigshafen | Verfahren zur Überführung von Rohkupferphthalocyaninen in eine Pigmentform |
-
1980
- 1980-02-19 US US06/122,204 patent/US4272335A/en not_active Expired - Lifetime
-
1981
- 1981-01-13 CA CA000368435A patent/CA1163953A/en not_active Expired
- 1981-01-30 FR FR8101821A patent/FR2476151B1/fr not_active Expired
- 1981-02-06 DE DE3104108A patent/DE3104108C2/de not_active Expired
- 1981-02-10 NL NL8100637A patent/NL8100637A/nl active Search and Examination
- 1981-02-13 JP JP56019989A patent/JPS5838516B2/ja not_active Expired
- 1981-02-17 IT IT47818/81A patent/IT1142757B/it active
- 1981-02-18 GB GB8105090A patent/GB2069536B/en not_active Expired
- 1981-02-18 BR BR8100970A patent/BR8100970A/pt not_active IP Right Cessation
- 1981-02-18 AU AU67416/81A patent/AU537582B2/en not_active Ceased
- 1981-02-18 ES ES499571A patent/ES8302126A1/es not_active Expired
- 1981-02-19 BE BE0/203853A patent/BE887595A/fr not_active IP Right Cessation
- 1981-02-19 MX MX186057A patent/MX155168A/es unknown
-
1986
- 1986-09-11 HK HK665/86A patent/HK66586A/xx unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4032864A1 (de) * | 1990-10-13 | 1992-04-16 | Schering Ag | Saures bad zur galvanischen abscheidung von kupferueberzuegen und verfahren unter verwendung dieser kombination |
Also Published As
Publication number | Publication date |
---|---|
IT1142757B (it) | 1986-10-15 |
MX155168A (es) | 1988-02-01 |
DE3104108A1 (de) | 1982-02-18 |
HK66586A (en) | 1986-09-18 |
ES499571A0 (es) | 1983-01-01 |
IT8147818A0 (it) | 1981-02-17 |
AU537582B2 (en) | 1984-07-05 |
BE887595A (fr) | 1981-08-19 |
JPS5838516B2 (ja) | 1983-08-23 |
FR2476151B1 (fr) | 1987-07-03 |
AU6741681A (en) | 1981-08-27 |
ES8302126A1 (es) | 1983-01-01 |
NL8100637A (nl) | 1981-09-16 |
US4272335A (en) | 1981-06-09 |
GB2069536A (en) | 1981-08-26 |
FR2476151A1 (fr) | 1981-08-21 |
JPS56130488A (en) | 1981-10-13 |
GB2069536B (en) | 1984-02-08 |
BR8100970A (pt) | 1981-08-25 |
CA1163953A (en) | 1984-03-20 |
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