DE3042765C2 - Integrierter statischer Speicher - Google Patents

Integrierter statischer Speicher

Info

Publication number
DE3042765C2
DE3042765C2 DE3042765A DE3042765A DE3042765C2 DE 3042765 C2 DE3042765 C2 DE 3042765C2 DE 3042765 A DE3042765 A DE 3042765A DE 3042765 A DE3042765 A DE 3042765A DE 3042765 C2 DE3042765 C2 DE 3042765C2
Authority
DE
Germany
Prior art keywords
diode
memory
cell
current
control line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3042765A
Other languages
German (de)
English (en)
Other versions
DE3042765A1 (de
Inventor
Cornelis Maria Hart
Jan Eindhoven Lohstroh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3042765A1 publication Critical patent/DE3042765A1/de
Application granted granted Critical
Publication of DE3042765C2 publication Critical patent/DE3042765C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE3042765A 1979-11-15 1980-11-13 Integrierter statischer Speicher Expired DE3042765C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.

Publications (2)

Publication Number Publication Date
DE3042765A1 DE3042765A1 (de) 1981-08-27
DE3042765C2 true DE3042765C2 (de) 1986-03-27

Family

ID=19834177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3042765A Expired DE3042765C2 (de) 1979-11-15 1980-11-13 Integrierter statischer Speicher

Country Status (7)

Country Link
US (1) US4393471A (cg-RX-API-DMAC10.html)
JP (1) JPS5827918B2 (cg-RX-API-DMAC10.html)
DE (1) DE3042765C2 (cg-RX-API-DMAC10.html)
FR (1) FR2469774A1 (cg-RX-API-DMAC10.html)
GB (1) GB2063609B (cg-RX-API-DMAC10.html)
IT (1) IT1134235B (cg-RX-API-DMAC10.html)
NL (1) NL7908340A (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145595A (ja) * 1985-12-20 1987-06-29 Toshiba Corp 半導体記憶装置
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路
DE19535106C2 (de) * 1995-09-21 1998-03-19 Siemens Ag SRAM-Speicherzelle

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573499A (en) * 1969-05-02 1971-04-06 Bell Telephone Labor Inc Bipolar memory using stored charge
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell

Also Published As

Publication number Publication date
FR2469774B1 (cg-RX-API-DMAC10.html) 1984-05-18
IT8025923A0 (it) 1980-11-12
FR2469774A1 (fr) 1981-05-22
JPS5827918B2 (ja) 1983-06-13
JPS5683894A (en) 1981-07-08
IT1134235B (it) 1986-08-13
US4393471A (en) 1983-07-12
DE3042765A1 (de) 1981-08-27
GB2063609B (en) 1984-04-18
GB2063609A (en) 1981-06-03
NL7908340A (nl) 1981-06-16

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee