IT8025923A0 - Complesso di celle di memorizzazione per una memoria statica. - Google Patents

Complesso di celle di memorizzazione per una memoria statica.

Info

Publication number
IT8025923A0
IT8025923A0 IT8025923A IT2592380A IT8025923A0 IT 8025923 A0 IT8025923 A0 IT 8025923A0 IT 8025923 A IT8025923 A IT 8025923A IT 2592380 A IT2592380 A IT 2592380A IT 8025923 A0 IT8025923 A0 IT 8025923A0
Authority
IT
Italy
Prior art keywords
storage cell
static memory
cell complex
complex
static
Prior art date
Application number
IT8025923A
Other languages
English (en)
Other versions
IT1134235B (it
Inventor
Cornelis Maria Hart
Jan Lohstroh
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8025923A0 publication Critical patent/IT8025923A0/it
Application granted granted Critical
Publication of IT1134235B publication Critical patent/IT1134235B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components
IT25923/80A 1979-11-15 1980-11-12 Complesso di celle di memorizzazione per una memoria statica IT1134235B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.

Publications (2)

Publication Number Publication Date
IT8025923A0 true IT8025923A0 (it) 1980-11-12
IT1134235B IT1134235B (it) 1986-08-13

Family

ID=19834177

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25923/80A IT1134235B (it) 1979-11-15 1980-11-12 Complesso di celle di memorizzazione per una memoria statica

Country Status (7)

Country Link
US (1) US4393471A (it)
JP (1) JPS5827918B2 (it)
DE (1) DE3042765C2 (it)
FR (1) FR2469774A1 (it)
GB (1) GB2063609B (it)
IT (1) IT1134235B (it)
NL (1) NL7908340A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145595A (ja) * 1985-12-20 1987-06-29 Toshiba Corp 半導体記憶装置
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573499A (en) * 1969-05-02 1971-04-06 Bell Telephone Labor Inc Bipolar memory using stored charge
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell

Also Published As

Publication number Publication date
JPS5683894A (en) 1981-07-08
IT1134235B (it) 1986-08-13
GB2063609A (en) 1981-06-03
GB2063609B (en) 1984-04-18
DE3042765A1 (de) 1981-08-27
JPS5827918B2 (ja) 1983-06-13
US4393471A (en) 1983-07-12
FR2469774B1 (it) 1984-05-18
NL7908340A (nl) 1981-06-16
DE3042765C2 (de) 1986-03-27
FR2469774A1 (fr) 1981-05-22

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