NL7908340A - Geheugencelinrichting voor statisch geheugen. - Google Patents

Geheugencelinrichting voor statisch geheugen. Download PDF

Info

Publication number
NL7908340A
NL7908340A NL7908340A NL7908340A NL7908340A NL 7908340 A NL7908340 A NL 7908340A NL 7908340 A NL7908340 A NL 7908340A NL 7908340 A NL7908340 A NL 7908340A NL 7908340 A NL7908340 A NL 7908340A
Authority
NL
Netherlands
Prior art keywords
cell
diode
transistor
collector
line
Prior art date
Application number
NL7908340A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7908340A priority Critical patent/NL7908340A/nl
Priority to US06/205,816 priority patent/US4393471A/en
Priority to GB8036356A priority patent/GB2063609B/en
Priority to FR8024040A priority patent/FR2469774A1/fr
Priority to IT25923/80A priority patent/IT1134235B/it
Priority to JP55158349A priority patent/JPS5827918B2/ja
Priority to DE3042765A priority patent/DE3042765C2/de
Publication of NL7908340A publication Critical patent/NL7908340A/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
NL7908340A 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen. NL7908340A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.
US06/205,816 US4393471A (en) 1979-11-15 1980-11-10 Memory cell arrangement for a static memory
GB8036356A GB2063609B (en) 1979-11-15 1980-11-12 Static memory cell
FR8024040A FR2469774A1 (fr) 1979-11-15 1980-11-12 Dispositif a cellule de memoire pour memoire statique
IT25923/80A IT1134235B (it) 1979-11-15 1980-11-12 Complesso di celle di memorizzazione per una memoria statica
JP55158349A JPS5827918B2 (ja) 1979-11-15 1980-11-12 メモリ・セル回路
DE3042765A DE3042765C2 (de) 1979-11-15 1980-11-13 Integrierter statischer Speicher

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.
NL7908340 1979-11-15

Publications (1)

Publication Number Publication Date
NL7908340A true NL7908340A (nl) 1981-06-16

Family

ID=19834177

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.

Country Status (7)

Country Link
US (1) US4393471A (it)
JP (1) JPS5827918B2 (it)
DE (1) DE3042765C2 (it)
FR (1) FR2469774A1 (it)
GB (1) GB2063609B (it)
IT (1) IT1134235B (it)
NL (1) NL7908340A (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145595A (ja) * 1985-12-20 1987-06-29 Toshiba Corp 半導体記憶装置
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573499A (en) * 1969-05-02 1971-04-06 Bell Telephone Labor Inc Bipolar memory using stored charge
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell

Also Published As

Publication number Publication date
JPS5683894A (en) 1981-07-08
FR2469774A1 (fr) 1981-05-22
GB2063609A (en) 1981-06-03
DE3042765C2 (de) 1986-03-27
US4393471A (en) 1983-07-12
IT1134235B (it) 1986-08-13
IT8025923A0 (it) 1980-11-12
GB2063609B (en) 1984-04-18
DE3042765A1 (de) 1981-08-27
JPS5827918B2 (ja) 1983-06-13
FR2469774B1 (it) 1984-05-18

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A1B A search report has been drawn up
BV The patent application has lapsed