FR2469774A1 - Dispositif a cellule de memoire pour memoire statique - Google Patents

Dispositif a cellule de memoire pour memoire statique

Info

Publication number
FR2469774A1
FR2469774A1 FR8024040A FR8024040A FR2469774A1 FR 2469774 A1 FR2469774 A1 FR 2469774A1 FR 8024040 A FR8024040 A FR 8024040A FR 8024040 A FR8024040 A FR 8024040A FR 2469774 A1 FR2469774 A1 FR 2469774A1
Authority
FR
France
Prior art keywords
memory
cell device
memory cell
static
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8024040A
Other languages
English (en)
Other versions
FR2469774B1 (fr
Inventor
Cornelis Maria Hart
Jan Lohstroh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2469774A1 publication Critical patent/FR2469774A1/fr
Application granted granted Critical
Publication of FR2469774B1 publication Critical patent/FR2469774B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/10—SRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

CELLULE DE MEMOIRE POUR UNE MEMOIRE STATIQUE DANS LAQUELLE LE NOMBRE DE LIGNES DE COMMANDE X, X, Y EST RAMENE AU MAXIMUM A TROIS PAR UTILISATION D'UNE DIODE 3 DANS LE PREMIER CIRCUIT DE COLLECTEUR OU DU MONTAGE EN SERIE D'UNE DIODE 4 ET D'UNE RESISTANCE 5 DANS L'AUTRE CIRCUIT DE COLLECTEUR D'UNE BASCULE ECCLES-JORDAN 1, 2, CES DIODES 4, 5 PRESENTANT UNE COURBE EXPONENTIELLE A EXPOSANT MOINS ELEVE QUE LES DIODES CLASSIQUES.
FR8024040A 1979-11-15 1980-11-12 Dispositif a cellule de memoire pour memoire statique Granted FR2469774A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7908340A NL7908340A (nl) 1979-11-15 1979-11-15 Geheugencelinrichting voor statisch geheugen.

Publications (2)

Publication Number Publication Date
FR2469774A1 true FR2469774A1 (fr) 1981-05-22
FR2469774B1 FR2469774B1 (fr) 1984-05-18

Family

ID=19834177

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8024040A Granted FR2469774A1 (fr) 1979-11-15 1980-11-12 Dispositif a cellule de memoire pour memoire statique

Country Status (7)

Country Link
US (1) US4393471A (fr)
JP (1) JPS5827918B2 (fr)
DE (1) DE3042765C2 (fr)
FR (1) FR2469774A1 (fr)
GB (1) GB2063609B (fr)
IT (1) IT1134235B (fr)
NL (1) NL7908340A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145595A (ja) * 1985-12-20 1987-06-29 Toshiba Corp 半導体記憶装置
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing
JPH06103781A (ja) * 1992-09-21 1994-04-15 Sharp Corp メモリセル回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573499A (en) * 1969-05-02 1971-04-06 Bell Telephone Labor Inc Bipolar memory using stored charge
US3990056A (en) * 1974-10-09 1976-11-02 Rockwell International Corporation High speed memory cell

Also Published As

Publication number Publication date
DE3042765A1 (de) 1981-08-27
JPS5683894A (en) 1981-07-08
NL7908340A (nl) 1981-06-16
JPS5827918B2 (ja) 1983-06-13
GB2063609B (en) 1984-04-18
IT8025923A0 (it) 1980-11-12
US4393471A (en) 1983-07-12
IT1134235B (it) 1986-08-13
FR2469774B1 (fr) 1984-05-18
GB2063609A (en) 1981-06-03
DE3042765C2 (de) 1986-03-27

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Legal Events

Date Code Title Description
ST Notification of lapse