NL7808151A - Statische geheugencel. - Google Patents
Statische geheugencel.Info
- Publication number
- NL7808151A NL7808151A NL787808151A NL7808151A NL7808151A NL 7808151 A NL7808151 A NL 7808151A NL 787808151 A NL787808151 A NL 787808151A NL 7808151 A NL7808151 A NL 7808151A NL 7808151 A NL7808151 A NL 7808151A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory cell
- static memory
- static
- cell
- memory
- Prior art date
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/821,068 US4104732A (en) | 1977-08-02 | 1977-08-02 | Static RAM cell |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7808151A true NL7808151A (nl) | 1979-02-06 |
Family
ID=25232418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL787808151A NL7808151A (nl) | 1977-08-02 | 1978-08-02 | Statische geheugencel. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4104732A (nl) |
JP (1) | JPS5811106B2 (nl) |
DE (1) | DE2833594A1 (nl) |
FR (1) | FR2399711A1 (nl) |
GB (1) | GB2001819B (nl) |
IT (1) | IT1109432B (nl) |
NL (1) | NL7808151A (nl) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4274891A (en) * | 1979-06-29 | 1981-06-23 | International Business Machines Corporation | Method of fabricating buried injector memory cell formed from vertical complementary bipolar transistor circuits utilizing mono-poly deposition |
EP0028354A1 (en) * | 1979-11-05 | 1981-05-13 | Texas Instruments Incorporated | Vertical Schottky logic |
US4400712A (en) * | 1981-02-13 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Static bipolar random access memory |
US4543595A (en) * | 1982-05-20 | 1985-09-24 | Fairchild Camera And Instrument Corporation | Bipolar memory cell |
US4503521A (en) * | 1982-06-25 | 1985-03-05 | International Business Machines Corporation | Non-volatile memory and switching device |
JPS6048090A (ja) * | 1983-08-26 | 1985-03-15 | 伊勢電子工業株式会社 | 螢光表示装置 |
TW335503B (en) | 1996-02-23 | 1998-07-01 | Semiconductor Energy Lab Kk | Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method |
US7528459B2 (en) * | 2003-05-27 | 2009-05-05 | Nxp B.V. | Punch-through diode and method of processing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3427598A (en) * | 1965-12-09 | 1969-02-11 | Fairchild Camera Instr Co | Emitter gated memory cell |
DE2418079B2 (de) * | 1974-04-13 | 1977-12-01 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Binaere frequenzteilerstufe |
DE2442773C3 (de) * | 1974-09-06 | 1978-12-14 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Master-Slave-Flipflopschaltung |
DE2455125C2 (de) * | 1974-11-21 | 1982-05-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Frequenzteilerstufe |
-
1977
- 1977-08-02 US US05/821,068 patent/US4104732A/en not_active Expired - Lifetime
-
1978
- 1978-06-19 GB GB787827287A patent/GB2001819B/en not_active Expired
- 1978-06-30 JP JP53079713A patent/JPS5811106B2/ja not_active Expired
- 1978-07-31 DE DE19782833594 patent/DE2833594A1/de not_active Ceased
- 1978-08-01 IT IT50565/78A patent/IT1109432B/it active
- 1978-08-02 FR FR7822805A patent/FR2399711A1/fr active Granted
- 1978-08-02 NL NL787808151A patent/NL7808151A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
IT7850565A0 (it) | 1978-08-01 |
FR2399711A1 (fr) | 1979-03-02 |
JPS5811106B2 (ja) | 1983-03-01 |
IT1109432B (it) | 1985-12-16 |
US4104732A (en) | 1978-08-01 |
FR2399711B1 (nl) | 1983-05-27 |
GB2001819A (en) | 1979-02-07 |
DE2833594A1 (de) | 1979-02-15 |
GB2001819B (en) | 1982-02-10 |
JPS5427383A (en) | 1979-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL7704931A (nl) | Capacitieve geheugencel. | |
IT1079567B (it) | Memoria perfezionata | |
SE7802625L (sv) | Halvledarminne | |
NL7801879A (nl) | Halfgeleidergeheugen. | |
NL7712341A (nl) | Geheugenstelsel. | |
IT1079558B (it) | Memoria perfezionata | |
IT1115319B (it) | Memoria perfezionata | |
NL7708581A (nl) | Elektrolysecel. | |
NL7602529A (nl) | Lithium-jodiumcel. | |
SE408602B (sv) | Matrisminne | |
NL7805867A (nl) | Opslagruimte. | |
NL7703328A (nl) | Zonnecel. | |
NL7809899A (nl) | Geheugencel. | |
NL178369C (nl) | Geheugeninrichting. | |
NL7807239A (nl) | Lithium-jodiumcel. | |
NL7812307A (nl) | Lithium-jodiumcel. | |
NL7811958A (nl) | Cel. | |
NL7708974A (nl) | Geheugenmatrix. | |
NL7607999A (nl) | Lithium-jodiumcel. | |
SE7806951L (sv) | Minnescellkrets | |
SE405292B (sv) | Kapacitiv minnescell | |
IT1113763B (it) | Memoria perfezionata | |
SE7602808L (sv) | Minnescell | |
NL7808151A (nl) | Statische geheugencel. | |
NL7810918A (nl) | Lithium-jodiumcel. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BV | The patent application has lapsed |