NL186934C - Statische bipolaire geheugencel. - Google Patents
Statische bipolaire geheugencel.Info
- Publication number
- NL186934C NL186934C NLAANVRAGE7906752,A NL7906752A NL186934C NL 186934 C NL186934 C NL 186934C NL 7906752 A NL7906752 A NL 7906752A NL 186934 C NL186934 C NL 186934C
- Authority
- NL
- Netherlands
- Prior art keywords
- memory cell
- bipolar memory
- static bipolar
- static
- cell
- Prior art date
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
US06/182,260 US4388636A (en) | 1979-09-11 | 1980-08-28 | Static memory cell and memory constructed from such cells |
CA000359440A CA1143477A (en) | 1979-09-11 | 1980-09-02 | Static memory cell and memory constructed from such cells |
AU62118/80A AU538551B2 (en) | 1979-09-11 | 1980-09-08 | Static memory cell |
GB8028935A GB2058453B (en) | 1979-09-11 | 1980-09-08 | Static bipolar memory |
DE3033731A DE3033731C2 (de) | 1979-09-11 | 1980-09-08 | Statische bipolare Speicherzelle und aus solchen Zellen aufgebauter Speicher |
IT24530/80A IT1132700B (it) | 1979-09-11 | 1980-09-08 | Cella statica di memoria e memoria realizzazione con l'impiego di tali celle |
SE8006225A SE449937B (sv) | 1979-09-11 | 1980-09-08 | Statisk bipoler minnescell och minne konstruerat av sadana celler |
JP55124127A JPS5826182B2 (ja) | 1979-09-11 | 1980-09-09 | 静的バイポ−ラ・メモリ・セル |
FR8019528A FR2465294A1 (fr) | 1979-09-11 | 1980-09-10 | Cellule de memoire statique et memoire formee de telles cellules |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
NL7906752 | 1979-09-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7906752A NL7906752A (nl) | 1981-03-13 |
NL186934B NL186934B (nl) | 1990-11-01 |
NL186934C true NL186934C (nl) | 1991-04-02 |
Family
ID=19833819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NLAANVRAGE7906752,A NL186934C (nl) | 1979-09-11 | 1979-09-11 | Statische bipolaire geheugencel. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4388636A (nl) |
JP (1) | JPS5826182B2 (nl) |
AU (1) | AU538551B2 (nl) |
CA (1) | CA1143477A (nl) |
DE (1) | DE3033731C2 (nl) |
FR (1) | FR2465294A1 (nl) |
GB (1) | GB2058453B (nl) |
IT (1) | IT1132700B (nl) |
NL (1) | NL186934C (nl) |
SE (1) | SE449937B (nl) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3380004D1 (en) * | 1982-03-30 | 1989-07-06 | Fujitsu Ltd | Semiconductor memory device |
JPS59141600U (ja) * | 1983-03-14 | 1984-09-21 | 日立造船富岡機械株式会社 | 抄紙機の紙の水分調節装置 |
US4956688A (en) * | 1984-10-29 | 1990-09-11 | Hitachi, Ltd. | Radiation resistant bipolar memory |
JPS6259977U (nl) * | 1985-10-03 | 1987-04-14 | ||
US5177584A (en) * | 1988-04-11 | 1993-01-05 | Hitachi, Ltd. | Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4032902A (en) * | 1975-10-30 | 1977-06-28 | Fairchild Camera And Instrument Corporation | An improved semiconductor memory cell circuit and structure |
FR2413782A1 (fr) * | 1977-12-30 | 1979-07-27 | Radiotechnique Compelec | Element de circuit integre destine aux memoires bipolaires a isolement lateral par oxyde |
JPS6057707B2 (ja) * | 1978-01-25 | 1985-12-16 | 株式会社日立製作所 | 記憶回路 |
US4257059A (en) * | 1978-12-20 | 1981-03-17 | Fairchild Camera And Instrument Corp. | Inverse transistor coupled memory cell |
-
1979
- 1979-09-11 NL NLAANVRAGE7906752,A patent/NL186934C/nl not_active IP Right Cessation
-
1980
- 1980-08-28 US US06/182,260 patent/US4388636A/en not_active Expired - Lifetime
- 1980-09-02 CA CA000359440A patent/CA1143477A/en not_active Expired
- 1980-09-08 SE SE8006225A patent/SE449937B/sv not_active IP Right Cessation
- 1980-09-08 IT IT24530/80A patent/IT1132700B/it active
- 1980-09-08 AU AU62118/80A patent/AU538551B2/en not_active Ceased
- 1980-09-08 GB GB8028935A patent/GB2058453B/en not_active Expired
- 1980-09-08 DE DE3033731A patent/DE3033731C2/de not_active Expired
- 1980-09-09 JP JP55124127A patent/JPS5826182B2/ja not_active Expired
- 1980-09-10 FR FR8019528A patent/FR2465294A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
NL186934B (nl) | 1990-11-01 |
DE3033731C2 (de) | 1985-05-30 |
GB2058453B (en) | 1983-07-06 |
US4388636A (en) | 1983-06-14 |
IT1132700B (it) | 1986-07-02 |
AU6211880A (en) | 1981-03-19 |
FR2465294B1 (nl) | 1985-02-15 |
SE8006225L (sv) | 1981-03-12 |
CA1143477A (en) | 1983-03-22 |
IT8024530A0 (it) | 1980-09-08 |
AU538551B2 (en) | 1984-08-16 |
DE3033731A1 (de) | 1981-03-26 |
NL7906752A (nl) | 1981-03-13 |
JPS5647991A (en) | 1981-04-30 |
FR2465294A1 (fr) | 1981-03-20 |
JPS5826182B2 (ja) | 1983-06-01 |
SE449937B (sv) | 1987-05-25 |
GB2058453A (en) | 1981-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1B | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
V1 | Lapsed because of non-payment of the annual fee |