DE3032610A1 - Anstiegszeitgeregelter generator in integrierter schaltkreistechnik zum erzeugen von ausgangssignalen mit gegenueber seiner versorgungsspannung erhoehten signlspannungen. - Google Patents
Anstiegszeitgeregelter generator in integrierter schaltkreistechnik zum erzeugen von ausgangssignalen mit gegenueber seiner versorgungsspannung erhoehten signlspannungen.Info
- Publication number
- DE3032610A1 DE3032610A1 DE19803032610 DE3032610A DE3032610A1 DE 3032610 A1 DE3032610 A1 DE 3032610A1 DE 19803032610 DE19803032610 DE 19803032610 DE 3032610 A DE3032610 A DE 3032610A DE 3032610 A1 DE3032610 A1 DE 3032610A1
- Authority
- DE
- Germany
- Prior art keywords
- potential
- voltage
- signal
- output
- charge pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005516 engineering process Methods 0.000 title claims description 10
- 238000005086 pumping Methods 0.000 claims description 24
- 230000015556 catabolic process Effects 0.000 claims description 17
- 230000000670 limiting effect Effects 0.000 claims description 11
- 238000005070 sampling Methods 0.000 claims description 10
- 230000001276 controlling effect Effects 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 230000002441 reversible effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 6
- 238000003491 array Methods 0.000 claims 2
- 230000015654 memory Effects 0.000 description 42
- 238000006243 chemical reaction Methods 0.000 description 35
- 238000007667 floating Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000033228 biological regulation Effects 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000819 phase cycle Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000033772 system development Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/02—Generating pulses having essentially a finite slope or stepped portions having stepped portions, e.g. staircase waveform
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Rectifiers (AREA)
- Generation Of Surge Voltage And Current (AREA)
- Manipulation Of Pulses (AREA)
- Read Only Memory (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/071,498 US4326134A (en) | 1979-08-31 | 1979-08-31 | Integrated rise-time regulated voltage generator systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3032610A1 true DE3032610A1 (de) | 1981-03-12 |
| DE3032610C2 DE3032610C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-04 |
Family
ID=22101703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803032610 Granted DE3032610A1 (de) | 1979-08-31 | 1980-08-29 | Anstiegszeitgeregelter generator in integrierter schaltkreistechnik zum erzeugen von ausgangssignalen mit gegenueber seiner versorgungsspannung erhoehten signlspannungen. |
Country Status (4)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102357730A (zh) * | 2011-09-15 | 2012-02-22 | 北京航空航天大学 | 一种适用于脉冲电子束焊接的偏压电源装置 |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533846A (en) * | 1979-01-24 | 1985-08-06 | Xicor, Inc. | Integrated circuit high voltage clamping systems |
| US4488060A (en) * | 1979-01-24 | 1984-12-11 | Xicor, Inc. | High voltage ramp rate control systems |
| US4617652A (en) * | 1979-01-24 | 1986-10-14 | Xicor, Inc. | Integrated high voltage distribution and control systems |
| US4520461A (en) * | 1979-01-24 | 1985-05-28 | Xicor, Inc. | Integrated high voltage distribution and control systems |
| GB2146502B (en) * | 1983-08-31 | 1987-07-01 | Nat Semiconductor Corp | Internal high voltage (vpp) rise control circuit |
| JPS60117498A (ja) * | 1983-11-30 | 1985-06-24 | Toshiba Corp | 不揮発性半導体メモリ装置 |
| US4685085A (en) * | 1985-06-17 | 1987-08-04 | Rockwell International Corporation | Non-volatile ram cell with charge pumps |
| JPS63290159A (ja) * | 1987-05-20 | 1988-11-28 | Matsushita Electric Ind Co Ltd | 昇圧回路 |
| JPS6459693A (en) * | 1987-08-31 | 1989-03-07 | Oki Electric Ind Co Ltd | Control circuit for eeprom |
| US4868415A (en) * | 1988-05-16 | 1989-09-19 | Motorola, Inc. | Voltage level conversion circuit |
| EP0356571B1 (en) * | 1988-09-02 | 1992-02-19 | Oki Electric Industry Company, Limited | Control circuit for eeprom |
| JP3071435B2 (ja) * | 1989-03-02 | 2000-07-31 | 沖電気工業株式会社 | 多ビット一致回路 |
| US5161157A (en) * | 1990-03-12 | 1992-11-03 | Xicor, Inc. | Field-programmable redundancy apparatus for memory arrays |
| US5153880A (en) * | 1990-03-12 | 1992-10-06 | Xicor, Inc. | Field-programmable redundancy apparatus for memory arrays |
| US5544103A (en) * | 1992-03-03 | 1996-08-06 | Xicor, Inc. | Compact page-erasable eeprom non-volatile memory |
| US5270972A (en) * | 1992-04-14 | 1993-12-14 | Xicor, Inc. | Three terminal serial-communicating peripheral device |
| US5321320A (en) * | 1992-08-03 | 1994-06-14 | Unisys Corporation | ECL driver with adjustable rise and fall times, and method therefor |
| US5365121A (en) * | 1993-03-08 | 1994-11-15 | Motorola Inc. | Charge pump with controlled ramp rate |
| US5381051A (en) * | 1993-03-08 | 1995-01-10 | Motorola Inc. | High voltage charge pump |
| JP3043201B2 (ja) * | 1993-04-22 | 2000-05-22 | 株式会社東芝 | 昇圧回路 |
| US5394027A (en) * | 1993-11-01 | 1995-02-28 | Motorola, Inc. | High voltage charge pump and related circuitry |
| US5872733A (en) * | 1995-06-06 | 1999-02-16 | International Business Machines Corporation | Ramp-up rate control circuit for flash memory charge pump |
| US5694297A (en) * | 1995-09-05 | 1997-12-02 | Astec International Limited | Integrated circuit mounting structure including a switching power supply |
| JP2730530B2 (ja) * | 1995-10-31 | 1998-03-25 | 日本電気株式会社 | 半導体集積回路及びその駆動方法 |
| US6052304A (en) * | 1998-06-18 | 2000-04-18 | Lsi Logic Corporation | Non-volatile storage element and method for manufacturing using standard processing |
| US6266075B1 (en) | 1999-07-08 | 2001-07-24 | Brady Worldwide, Inc. | Printer with memory device for storing platen pressures |
| EP1258975B1 (fr) * | 2001-05-18 | 2015-09-30 | EM Microelectronic-Marin SA | Circuit de régulation pour un générateur haute tension |
| CN102263543B (zh) * | 2010-05-26 | 2015-03-11 | 上海华虹宏力半导体制造有限公司 | 电荷泵时钟产生电路 |
| US8310300B2 (en) | 2010-08-27 | 2012-11-13 | Freescale Semiconductor, Inc. | Charge pump having ramp rate control |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| DE2637808A1 (de) * | 1975-09-04 | 1977-03-10 | Ibm | Kompensationsschaltung |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3631259A (en) * | 1970-04-14 | 1971-12-28 | Kenmatu Kiyota | Apparatus for boosting a direct current voltage |
| CH553481A (fr) * | 1972-06-27 | 1974-08-30 | Battelle Memorial Institute | Ensemble pour polariser le substrat d'un circuit integre. |
| JPS4968648A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-11-06 | 1974-07-03 | ||
| US3942047A (en) * | 1974-06-03 | 1976-03-02 | Motorola, Inc. | MOS DC Voltage booster circuit |
| CH617298A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1976-05-07 | 1980-05-14 | Ebauches Sa |
-
1979
- 1979-08-31 US US06/071,498 patent/US4326134A/en not_active Expired - Lifetime
-
1980
- 1980-08-29 FR FR8018739A patent/FR2464597B1/fr not_active Expired
- 1980-08-29 DE DE19803032610 patent/DE3032610A1/de active Granted
- 1980-09-01 JP JP12100080A patent/JPS5636223A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3500142A (en) * | 1967-06-05 | 1970-03-10 | Bell Telephone Labor Inc | Field effect semiconductor apparatus with memory involving entrapment of charge carriers |
| US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
| DE2637808A1 (de) * | 1975-09-04 | 1977-03-10 | Ibm | Kompensationsschaltung |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4263664A (en) * | 1979-08-31 | 1981-04-21 | Xicor, Inc. | Nonvolatile static random access memory system |
Non-Patent Citations (7)
| Title |
|---|
| #### * |
| ANDERSON et al.: Evidence for Surface Asperity Mechanism of Conductivity in Oxide Grown on Polycristalline Silicon, In: Journal of Appl. Phys., Vol.48, No.11, 1977, S.4834-4836 * |
| BITETTC, V., STAMM, E.HZ.: Waveform Shaping Circuit, In: IBM Technical Disclosure Bulletin, Vol.2, No.4, Dez.1959, S.88 * |
| DI MARIA et al.: Interface Effects and High Conductivity in Oxides Grown from Polycrystalline Silicon. In: Appl. Phys. Letters (1975), S.505-507 * |
| HORNE et al.: A Military Grade 1024 Bit Nouvo- latile Semiconductor RAM, In: IEEE Trans. Elektron Devices, Vol. ED-25, No.8 (1978) S.1061-1065 * |
| LORENZ, HINZE, KUHN: Hochspannungstechnik, Berlin,VEB-Verlag Technik, 1966, S.265 * |
| UCHIDA et al.: lk Nouvolatile Semiconductor Read/Write RAM, In: IEEE Trans. Electron Devices, Vol. ED-25, No.8 (1978), S.1065-1070 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102357730A (zh) * | 2011-09-15 | 2012-02-22 | 北京航空航天大学 | 一种适用于脉冲电子束焊接的偏压电源装置 |
| CN102357730B (zh) * | 2011-09-15 | 2013-04-24 | 北京航空航天大学 | 一种适用于脉冲电子束焊接的偏压电源装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2464597B1 (fr) | 1988-01-22 |
| DE3032610C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-03-04 |
| JPS5636223A (en) | 1981-04-09 |
| FR2464597A1 (fr) | 1981-03-06 |
| JPH0249057B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1990-10-29 |
| US4326134A (en) | 1982-04-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |