DE2931297A1 - Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen - Google Patents
Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturenInfo
- Publication number
- DE2931297A1 DE2931297A1 DE19792931297 DE2931297A DE2931297A1 DE 2931297 A1 DE2931297 A1 DE 2931297A1 DE 19792931297 DE19792931297 DE 19792931297 DE 2931297 A DE2931297 A DE 2931297A DE 2931297 A1 DE2931297 A1 DE 2931297A1
- Authority
- DE
- Germany
- Prior art keywords
- resistant
- positive resists
- heat
- relief structures
- positive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002243 precursor Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 18
- 229920000642 polymer Polymers 0.000 claims abstract description 14
- 125000003118 aryl group Chemical group 0.000 claims abstract description 8
- -1 dicarboxylic acid chlorides Chemical class 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 150000002148 esters Chemical class 0.000 claims abstract description 4
- 238000006068 polycondensation reaction Methods 0.000 claims abstract description 4
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011888 foil Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 7
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- FDQSRULYDNDXQB-UHFFFAOYSA-N benzene-1,3-dicarbonyl chloride Chemical compound ClC(=O)C1=CC=CC(C(Cl)=O)=C1 FDQSRULYDNDXQB-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229920003023 plastic Polymers 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 239000012704 polymeric precursor Substances 0.000 claims description 2
- LXEJRKJRKIFVNY-UHFFFAOYSA-N terephthaloyl chloride Chemical compound ClC(=O)C1=CC=C(C(Cl)=O)C=C1 LXEJRKJRKIFVNY-UHFFFAOYSA-N 0.000 claims description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 239000007859 condensation product Substances 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 239000003960 organic solvent Substances 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000003860 storage Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 23
- 239000010410 layer Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000001488 sodium phosphate Substances 0.000 description 8
- 229910000162 sodium phosphate Inorganic materials 0.000 description 8
- 238000005496 tempering Methods 0.000 description 8
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229920002577 polybenzoxazole Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- RXTHAGCVCGSZLO-UHFFFAOYSA-N 2-diazoniophenolate Chemical compound [O-]C1=CC=CC=C1[N+]#N RXTHAGCVCGSZLO-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RSPISYXLHRIGJD-UHFFFAOYSA-N OOOO Chemical compound OOOO RSPISYXLHRIGJD-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000004984 aromatic diamines Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- URQUNWYOBNUYJQ-UHFFFAOYSA-N diazonaphthoquinone Chemical compound C1=CC=C2C(=O)C(=[N]=[N])C=CC2=C1 URQUNWYOBNUYJQ-UHFFFAOYSA-N 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Drying Of Semiconductors (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792931297 DE2931297A1 (de) | 1979-08-01 | 1979-08-01 | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| US06/170,935 US4339521A (en) | 1979-08-01 | 1980-07-18 | Heat resistant positive resists containing polyoxazoles |
| AT80104288T ATE3476T1 (de) | 1979-08-01 | 1980-07-21 | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen. |
| EP80104288A EP0023662B1 (de) | 1979-08-01 | 1980-07-21 | Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen |
| DE8080104288T DE3063322D1 (en) | 1979-08-01 | 1980-07-21 | Heat-resistent positive photoresists and process for the preparation of heat-resistent relief structures |
| JP10631080A JPS5627140A (en) | 1979-08-01 | 1980-08-01 | Thermally stabilized positive resist and preparation of thermally stable relief structure using same |
| US06/372,540 US4395482A (en) | 1979-08-01 | 1982-04-28 | Method for the preparation of heat-resistant relief structures using positive resists |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19792931297 DE2931297A1 (de) | 1979-08-01 | 1979-08-01 | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2931297A1 true DE2931297A1 (de) | 1981-02-19 |
Family
ID=6077402
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19792931297 Withdrawn DE2931297A1 (de) | 1979-08-01 | 1979-08-01 | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| DE8080104288T Expired DE3063322D1 (en) | 1979-08-01 | 1980-07-21 | Heat-resistent positive photoresists and process for the preparation of heat-resistent relief structures |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE8080104288T Expired DE3063322D1 (en) | 1979-08-01 | 1980-07-21 | Heat-resistent positive photoresists and process for the preparation of heat-resistent relief structures |
Country Status (5)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4028515C2 (de) * | 1990-09-07 | 2000-11-30 | Siemens Ag | Resists auf der Basis von oligomeren und/oder polymeren Polybenzoxazol-Vorstufen |
Families Citing this family (128)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2931297A1 (de) * | 1979-08-01 | 1981-02-19 | Siemens Ag | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
| US4439516A (en) * | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
| DE3246403A1 (de) * | 1982-12-15 | 1984-06-20 | Merck Patent Gmbh, 6100 Darmstadt | Verfahren zur entwicklung von reliefstrukturen auf der basis von strahlungsvernetzten polymervorstufen hochwaermebestaendiger polymere |
| CA1265948A (en) * | 1983-11-02 | 1990-02-20 | Olin Hunt Specialty Products Inc. | Thermally stable positive resist |
| DE3411659A1 (de) * | 1984-03-29 | 1985-10-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von polyoxazol- und polythiazol-vorstufen |
| US4663268A (en) * | 1984-12-28 | 1987-05-05 | Eastman Kodak Company | High-temperature resistant photoresists featuring maleimide binders |
| US4942108A (en) * | 1985-12-05 | 1990-07-17 | International Business Machines Corporation | Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers |
| EP0224680B1 (en) * | 1985-12-05 | 1992-01-15 | International Business Machines Corporation | Diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers |
| US5021320A (en) * | 1986-10-02 | 1991-06-04 | Hoechst Celanese Corporation | Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist |
| US5240819A (en) * | 1986-10-02 | 1993-08-31 | Hoechst Celanese Corporation | Polyamide containing the hexafluoroisopropylidene group and process of using to form a positive image |
| US5077378A (en) * | 1986-10-02 | 1991-12-31 | Hoechst Celanese Corporation | Polyamide containing the hexafluoroisopropylidene group |
| DE3888390D1 (de) * | 1987-05-18 | 1994-04-21 | Siemens Ag | Verfahren zur Herstellung hochwärmebeständiger Dielektrika. |
| EP0291779B1 (de) * | 1987-05-18 | 1994-07-27 | Siemens Aktiengesellschaft | Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen |
| DE3716629C2 (de) * | 1987-05-18 | 1997-06-12 | Siemens Ag | Wärmebeständige positiv arbeitende strahlungsempfindliche Gemische und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen |
| US5037720A (en) * | 1987-07-21 | 1991-08-06 | Hoechst Celanese Corporation | Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use |
| US4927736A (en) * | 1987-07-21 | 1990-05-22 | Hoechst Celanese Corporation | Hydroxy polyimides and high temperature positive photoresists therefrom |
| US4845183A (en) * | 1987-11-24 | 1989-07-04 | Hoechst Celanese Corporation | Heat resistant polyamide and polybenzoxazole from bis-((amino-hydroxyphenyl)hexafluoroisopropyl)diphenyl ethers |
| US5011753A (en) * | 1987-11-24 | 1991-04-30 | Hoechst Celanese Corporation | Photoresist compositions containing polyamides polybenzoxa from bis((aminohydroxyphenyl)hexafluoroisopropyl)diphenyl ethers |
| US5250388A (en) * | 1988-05-31 | 1993-10-05 | Westinghouse Electric Corp. | Production of highly conductive polymers for electronic circuits |
| DE3837612A1 (de) * | 1988-11-05 | 1990-05-23 | Ciba Geigy Ag | Positiv-fotoresists von polyimid-typ |
| US5024922A (en) * | 1988-11-07 | 1991-06-18 | Moss Mary G | Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake |
| EP0391196A3 (de) * | 1989-04-06 | 1991-02-27 | Siemens Aktiengesellschaft | Herstellung von Hydroxypolyamiden |
| EP0391200B1 (de) * | 1989-04-06 | 1995-10-11 | Siemens Aktiengesellschaft | Herstellung hochwärmebeständiger Reliefstrukturen |
| FI901655A7 (fi) * | 1989-05-02 | 1990-11-03 | Siemens Ag | Kapasitiivinen kosteusanturi |
| DE69021022T2 (de) * | 1989-12-07 | 1996-01-18 | Toshiba Kawasaki Kk | Lichtempfindliche Zusammensetzung und harzumhüllte Halbleiteranordnung. |
| US5114826A (en) * | 1989-12-28 | 1992-05-19 | Ibm Corporation | Photosensitive polyimide compositions |
| DE59010552D1 (de) * | 1990-03-29 | 1996-12-05 | Siemens Ag | Hochwärmebeständige Negativresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen |
| EP0459395B1 (en) * | 1990-05-29 | 1999-08-18 | Sumitomo Bakelite Company Limited | Positive photo-sensitive resin composition |
| JP2890213B2 (ja) * | 1991-02-25 | 1999-05-10 | チッソ株式会社 | 感光性重合体組成物及びパターンの形成方法 |
| EP0512339B1 (de) * | 1991-05-07 | 1997-10-15 | Siemens Aktiengesellschaft | Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen |
| US5405661A (en) * | 1992-08-14 | 1995-04-11 | The Dow Chemical Company | Fire resistant panel |
| DE59600371D1 (de) * | 1995-03-23 | 1998-09-03 | Siemens Ag | Verfahren zur Herstellung von Polybenzoxazol-Vorstufen und entsprechender Resistlösungen |
| EP0750003B1 (de) * | 1995-06-19 | 2002-08-14 | Infineon Technologies AG | Verfahren zur Herstellung von Poly-o-hydroxyamiden |
| DE59602852D1 (de) * | 1995-06-19 | 1999-09-30 | Siemens Ag | Verfahren zur Herstellung von Poly-o-hydroxyamiden |
| EP0761718B1 (de) * | 1995-08-31 | 2001-02-28 | Infineon Technologies AG | Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| EP0761641B1 (de) * | 1995-08-31 | 2001-03-21 | Infineon Technologies AG | Dicarbonsäurederivate und ihre Verwendung zur Herstellung von Poly-o-hydroxyamiden oder Poly-o-mercaptoamiden |
| EP0761719B1 (de) * | 1995-08-31 | 2001-03-28 | Infineon Technologies AG | Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| EP0761720B1 (de) * | 1995-08-31 | 2001-02-28 | Infineon Technologies AG | Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| DE59607034D1 (de) * | 1995-08-31 | 2001-07-12 | Infineon Technologies Ag | Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| EP0761716B1 (de) * | 1995-08-31 | 2001-02-28 | Infineon Technologies AG | Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| EP0761721B1 (de) * | 1995-08-31 | 2001-02-28 | Infineon Technologies AG | Verfahren zur Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| EP0765894B1 (de) * | 1995-08-31 | 2001-02-28 | Infineon Technologies AG | Herstellung von Poly-o-hydroxyamiden und Poly-o-mercaptoamiden |
| TW502135B (en) * | 1996-05-13 | 2002-09-11 | Sumitomo Bakelite Co | Positive type photosensitive resin composition and process for preparing polybenzoxazole resin film by using the same |
| EP0848028B1 (de) * | 1996-12-11 | 2004-02-18 | Infineon Technologies AG | Herstellung von Polybenzoxazol- und Polybenzothiazol-Vorstufen |
| JP3190967B2 (ja) * | 1996-12-16 | 2001-07-23 | 住友ベークライト株式会社 | アルカリ性水溶液及び感光性樹脂組成物のパターン形成方法 |
| EP0852341B1 (en) | 1997-01-03 | 2001-08-29 | Sumitomo Bakelite Company Limited | Method for the pattern-processing of photosensitive resin composition |
| EP0905170B1 (de) * | 1997-09-24 | 2013-10-30 | Qimonda AG | Polybenzoxazol- und Polybenzothiazol-Vorstufen |
| DE59802423D1 (de) * | 1997-09-24 | 2002-01-24 | Infineon Technologies Ag | Bis-o-amino(thio)phenole und deren Herstellung |
| EP0905169B8 (de) * | 1997-09-24 | 2008-07-16 | Infineon Technologies AG | Polybenzoxazol- und Polybenzothiazol-Vorstufen |
| DE59802413D1 (de) | 1997-09-24 | 2002-01-24 | Infineon Technologies Ag | o-Amino(thio)phenol-carbonsäuren und deren Herstellung |
| DE59802416D1 (de) * | 1997-09-24 | 2002-01-24 | Infineon Technologies Ag | Bis-o-amino(thio)phenole und deren Herstellung |
| DE59802415D1 (de) * | 1997-09-24 | 2002-01-24 | Infineon Technologies Ag | o-Amino(thio)phenol-carbonsäuren und deren Herstellung |
| WO2000001684A1 (fr) | 1998-07-03 | 2000-01-13 | Nec Corporation | Derives de (meth)acrylate porteurs d'une structure lactone, compositions polymeres et photoresists et procede de formation de modeles a l'aide de ceux-ci |
| US6143467A (en) * | 1998-10-01 | 2000-11-07 | Arch Specialty Chemicals, Inc. | Photosensitive polybenzoxazole precursor compositions |
| US6214516B1 (en) | 1998-10-01 | 2001-04-10 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| US6177225B1 (en) * | 1998-10-01 | 2001-01-23 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| US6127086A (en) * | 1998-10-01 | 2000-10-03 | Arch Specialty Chemicals, Inc. | Photosensitive resin compositions |
| JP4529252B2 (ja) * | 1999-09-28 | 2010-08-25 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターンの製造法及び電子部品 |
| DE10011604A1 (de) | 2000-03-10 | 2001-10-04 | Infineon Technologies Ag | Polybenzoxazol-Vorstufen |
| EP1138804A3 (de) | 2000-03-27 | 2003-06-25 | Infineon Technologies AG | Bauelement mit zumindest zwei aneinander grenzenden Isolierschichten und Herstellungsverfahren dazu |
| JP4982928B2 (ja) * | 2000-06-28 | 2012-07-25 | 東レ株式会社 | 表示装置 |
| JP4798851B2 (ja) * | 2001-01-23 | 2011-10-19 | 旭化成イーマテリアルズ株式会社 | アルコキシシラン化合物及びその組成物 |
| KR100830773B1 (ko) * | 2001-05-07 | 2008-05-20 | 스미토모 베이클리트 컴퍼니 리미티드 | 포지티브형 감광성 수지 조성물 및 반도체 장치 |
| DE10125372B4 (de) * | 2001-05-23 | 2007-09-13 | Infineon Technologies Ag | Mischung zur Verwendung als Antireflexionsschicht, Substrat mit einer Antireflexionsschicht und Verfahren zur Herstellung einer Antireflexionsschicht |
| WO2003011974A1 (fr) * | 2001-07-26 | 2003-02-13 | Nissan Chemical Industries, Ltd. | Composition de resine d'acide polyamique |
| DE10145469B4 (de) * | 2001-09-14 | 2006-07-06 | Infineon Technologies Ag | Poly-o-hydroxyamid und Verfahren zu seiner Weiterverarbeitung zu Polybenzoxazol |
| DE10145471A1 (de) * | 2001-09-14 | 2003-04-17 | Infineon Technologies Ag | Fotosensitive Formulierung für Pufferschichten und Verwendungen dazu |
| DE10145472A1 (de) * | 2001-09-14 | 2003-04-17 | Infineon Technologies Ag | Fotosensitive Formulierung für Pufferschichten und Verwendungen dazu |
| DE10228770A1 (de) * | 2002-06-27 | 2004-02-12 | Infineon Technologies Ag | Dielektrikum mit Sperrwirkung gegen Kupferdiffusion |
| US6670090B1 (en) * | 2002-09-03 | 2003-12-30 | Industrial Technology Research Institute | Positive working photosensitive composition, article and process for forming a relief pattern |
| JP4207581B2 (ja) * | 2002-11-06 | 2009-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | 耐熱感光性樹脂組成物、レリーフパターンの製造方法及び電子部品 |
| EP1609024B1 (en) * | 2003-03-11 | 2015-09-30 | Fujifilm Electronic Materials USA, Inc. | Photosensitive resin compositions |
| EP1606326A2 (en) * | 2003-03-11 | 2005-12-21 | FujiFilm Electronic Materials USA, Inc. | Novel photosensitive resin compositions |
| KR20060002768A (ko) | 2003-03-11 | 2006-01-09 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 새로운 감광성 수지 조성물들 |
| WO2004109400A2 (en) * | 2003-03-11 | 2004-12-16 | Arch Speciality Chemicals, Inc. | Novel photosensitive resin compositions |
| JP4430670B2 (ja) | 2003-06-05 | 2010-03-10 | フジフィルム・エレクトロニック・マテリアルズ・ユーエスエイ・インコーポレイテッド | 新規なポジ型感光性樹脂組成物 |
| EP2381308B1 (en) | 2003-06-23 | 2015-07-29 | Sumitomo Bakelite Co., Ltd. | Positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device |
| JP4128116B2 (ja) * | 2003-07-29 | 2008-07-30 | 旭化成エレクトロニクス株式会社 | ポジ型感光性樹脂組成物 |
| TW200512543A (en) | 2003-08-06 | 2005-04-01 | Sumitomo Bakelite Co | Polyamide resin, positive-working photosensitive resin composition, method for producing pattern-formed resin film, semiconductor device, display device, and method for producing the semiconductor device and the display device |
| JP4244309B2 (ja) * | 2003-09-12 | 2009-03-25 | 富士フイルム株式会社 | 平版印刷版原版 |
| TWI363249B (en) | 2003-10-15 | 2012-05-01 | Fujifilm Electronic Materials | Novel photosensitive resin compositions |
| EP1707588A4 (en) * | 2004-01-20 | 2009-07-01 | Asahi Kasei Emd Corp | RESIN AND RESIN COMPOSITION |
| US7439005B2 (en) | 2004-02-26 | 2008-10-21 | Nec Corporation | Styrene derivative, styrene polymer, photosensitive resin composition, and method for forming pattern |
| WO2005101125A1 (ja) * | 2004-03-31 | 2005-10-27 | Hitachi Chemical Dupont Microsystems Ltd. | 耐熱感光性樹脂組成物、該組成物を用いたパターン製造方法、及び電子部品 |
| WO2005109099A1 (ja) | 2004-05-07 | 2005-11-17 | Hitachi Chemical Dupont Microsystems Ltd. | ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
| US7638254B2 (en) * | 2004-05-07 | 2009-12-29 | Hitachi Chemical Dupont Microsystems Ltd | Positive photosensitive resin composition, method for forming pattern, and electronic part |
| TW200628981A (en) * | 2004-09-29 | 2006-08-16 | Sumitomo Bakelite Co | Semiconductor device |
| JP4530284B2 (ja) * | 2004-10-07 | 2010-08-25 | 信越化学工業株式会社 | ポリイミド系光硬化性樹脂組成物並びにパターン形成方法及び基板保護用皮膜 |
| TW200619843A (en) * | 2004-10-20 | 2006-06-16 | Sumitomo Bakelite Co | Semiconductor wafer and semiconductor device |
| JP4771412B2 (ja) * | 2005-02-14 | 2011-09-14 | 信越化学工業株式会社 | 感光性樹脂及びその製造方法 |
| WO2006121150A1 (ja) * | 2005-05-13 | 2006-11-16 | Nec Corporation | （メタ）アクリルアミド誘導体、重合体、化学増幅型感光性樹脂組成物及びパターン形成方法 |
| US7220520B2 (en) | 2005-06-03 | 2007-05-22 | Fujifilm Electronic Materials U.S.A., Inc. | Photosensitive resin compositions |
| US7803510B2 (en) * | 2005-08-17 | 2010-09-28 | Fujifilm Electronic Materials U.S.A., Inc. | Positive photosensitive polybenzoxazole precursor compositions |
| TWI407255B (zh) * | 2005-09-22 | 2013-09-01 | Hitachi Chem Dupont Microsys | 負片型感光性樹脂組成物、圖案形成方法以及電子零件 |
| KR20140009592A (ko) * | 2006-03-16 | 2014-01-22 | 아사히 가라스 가부시키가이샤 | 네거티브형 감광성 함불소 방향족계 수지 조성물 |
| KR101025395B1 (ko) * | 2006-06-20 | 2011-03-28 | 히다치 가세이듀퐁 마이쿠로시스데무즈 가부시키가이샤 | 네거티브형 감광성 수지 조성물, 패턴의 제조방법 및 전자부품 |
| EP2056163A4 (en) * | 2006-08-15 | 2009-11-11 | Asahi Kasei Emd Corp | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION |
| JP4386454B2 (ja) * | 2006-08-22 | 2009-12-16 | 信越化学工業株式会社 | アルカリ水溶液に可溶な感光性ポリイミド樹脂、該樹脂を含む組成物、及び該組成物から得られる膜 |
| EP2077291B1 (en) * | 2006-10-24 | 2013-01-09 | Sumitomo Bakelite Company, Ltd. | Bis(aminophenol) derivative, process for producing the same, polyamide resin, positive photosensitive resin compositions, protective film, interlayer dielectric, semiconductor device, and display element |
| JP4336999B2 (ja) | 2007-01-31 | 2009-09-30 | 信越化学工業株式会社 | シルフェニレン骨格含有高分子化合物及び光硬化性樹脂組成物並びにパターン形成方法及び基板回路保護用皮膜 |
| EP2113810A4 (en) | 2007-02-19 | 2010-07-21 | Sumitomo Bakelite Co | Photosensitive resin composition, hardened film, protective film, insulating film and semi-conductor arrangement therefor and display arrangement |
| US8298747B2 (en) * | 2007-03-12 | 2012-10-30 | Hitachi Chemical Dupont Microsystems, Ltd. | Photosensitive resin composition, process for producing patterned hardened film with use thereof and electronic part |
| US7615324B2 (en) | 2007-03-14 | 2009-11-10 | Fujifilm Corporation | Photosensitive composition, and cured relief pattern production method and semiconductor device using the same |
| EP2175319A4 (en) * | 2007-07-26 | 2010-08-25 | Sumitomo Bakelite Co | POSITIVE LIGHT-SENSITIVE RESIN COMPOSITION FOR SPRAYING COATING, METHOD FOR FORMING A HARDENED FILM THEREWITH, HARDENED FILM THEREFOR AND SEMICONDUCTOR DEVICE |
| JP4881811B2 (ja) | 2007-07-31 | 2012-02-22 | 富士フイルム株式会社 | 感光性樹脂組成物、それを用いた硬化レリーフパターンの製造方法及び半導体装置 |
| JP5495487B2 (ja) * | 2007-09-03 | 2014-05-21 | 旭化成イーマテリアルズ株式会社 | ポジ型感光性樹脂組成物、及びそれに用いられるナフトキノンジアジド化合物 |
| WO2009052177A1 (en) * | 2007-10-16 | 2009-04-23 | Fujifilm Electronic Materials U.S.A., Inc. | Novel photosensitive resin compositions |
| WO2009057638A1 (ja) * | 2007-10-29 | 2009-05-07 | Hitachi Chemical Dupont Microsystems, Ltd. | ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品 |
| US7678514B2 (en) | 2007-12-27 | 2010-03-16 | Sumitomo Bakelite Co., Ltd. | Positive-type photosensitive resin composition, cured film, protecting film, insulating film and semiconductor device and display device using these films |
| US9519216B2 (en) * | 2008-02-04 | 2016-12-13 | Fujifilm Electronic Materials U.S.A., Inc. | Positive photosensitive resin compositions |
| US8492469B2 (en) | 2008-05-07 | 2013-07-23 | Sumitomo Bakelite Co., Ltd. | Positive-type photosensitive resin composition, cured film, protective film, insulating film, and semiconductor device and display device including the cured film |
| JP4911116B2 (ja) * | 2008-05-22 | 2012-04-04 | 日立化成デュポンマイクロシステムズ株式会社 | 半導体装置及びその製造方法、感光性樹脂組成物並びに電子部品 |
| JP5206977B2 (ja) * | 2009-03-12 | 2013-06-12 | 信越化学工業株式会社 | 新規ポリイミドシリコーン及びこれを含有する感光性樹脂組成物並びにパターン形成方法 |
| WO2010134207A1 (ja) | 2009-05-20 | 2010-11-25 | 住友ベークライト株式会社 | ポジ型感光性樹脂組成物、硬化膜、保護膜、層間絶縁膜、 およびそれを用いた半導体装置、表示素子 |
| TWI516527B (zh) | 2009-12-10 | 2016-01-11 | 信越化學工業股份有限公司 | 光固化性樹脂組成物，圖案形成法和基板保護膜，以及使用該組成物之膜狀黏著劑及黏著片 |
| JP5655794B2 (ja) | 2010-01-21 | 2015-01-21 | 日立化成デュポンマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品 |
| JPWO2011152058A1 (ja) * | 2010-06-03 | 2013-07-25 | 住友ベークライト株式会社 | 感光性樹脂組成物及び感光性樹脂組成物の製造方法 |
| US20130108967A1 (en) * | 2010-07-09 | 2013-05-02 | Sumitomo Bakelite Co., Ltd. | Method for forming cured film |
| CN103502889B (zh) | 2011-06-15 | 2017-07-21 | 日立化成杜邦微系统股份有限公司 | 感光性树脂组合物、使用了该树脂组合物的图案固化膜的制造方法以及电子部件 |
| KR101413076B1 (ko) * | 2011-12-23 | 2014-06-30 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 이를 사용하여 제조된 감광성 수지막 및 상기 감광성 수지막을 포함하는 반도체 소자 |
| JP5613851B1 (ja) * | 2014-02-28 | 2014-10-29 | Jsr株式会社 | 表示又は照明装置 |
| JP6743701B2 (ja) | 2014-10-02 | 2020-08-19 | Ｈｄマイクロシステムズ株式会社 | ポジ型感光性樹脂組成物、パターン硬化膜の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品 |
| EP3225647A4 (en) | 2014-11-27 | 2018-08-01 | Toray Industries, Inc. | Resin and photosensitive resin composition |
| EP3360915A4 (en) | 2015-10-08 | 2019-05-15 | Nippon Kayaku Kabushiki Kaisha | NOVEL POLYSULFONE AMIDE COMPOUND AND RESIN COMPOSITION CONTAINING SAME |
| TWI796337B (zh) | 2017-06-16 | 2023-03-21 | 美商富士軟片電子材料美國股份有限公司 | 多層結構 |
| JP7111031B2 (ja) * | 2018-03-23 | 2022-08-02 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性樹脂積層体、及びパターン形成方法 |
| KR20200057146A (ko) | 2018-11-15 | 2020-05-26 | 나노크리스탈주식회사 | 폴리벤즈옥사졸 전구체, 이를 포함하는 포토레지스트 조성물 및 이를 이용한 경화막 패턴의 형성방법. |
| JP7066918B2 (ja) | 2019-04-02 | 2022-05-13 | 日本化薬株式会社 | ビスマレイミド化合物、それを用いた感光性樹脂組成物、その硬化物及び半導体素子 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3332907A (en) * | 1963-06-17 | 1967-07-25 | Du Pont | Oxy aromatic polyamides and process for preparation |
| US4093461A (en) * | 1975-07-18 | 1978-06-06 | Gaf Corporation | Positive working thermally stable photoresist composition, article and method of using |
| US4326018A (en) * | 1977-12-12 | 1982-04-20 | Polychrome Corporation | Lithographic printing plate |
| DE2931297A1 (de) * | 1979-08-01 | 1981-02-19 | Siemens Ag | Waermebestaendige positivresists und verfahren zur herstellung waermebestaendiger reliefstrukturen |
-
1979
- 1979-08-01 DE DE19792931297 patent/DE2931297A1/de not_active Withdrawn
-
1980
- 1980-07-18 US US06/170,935 patent/US4339521A/en not_active Expired - Lifetime
- 1980-07-21 EP EP80104288A patent/EP0023662B1/de not_active Expired
- 1980-07-21 AT AT80104288T patent/ATE3476T1/de active
- 1980-07-21 DE DE8080104288T patent/DE3063322D1/de not_active Expired
- 1980-08-01 JP JP10631080A patent/JPS5627140A/ja active Granted
-
1982
- 1982-04-28 US US06/372,540 patent/US4395482A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4028515C2 (de) * | 1990-09-07 | 2000-11-30 | Siemens Ag | Resists auf der Basis von oligomeren und/oder polymeren Polybenzoxazol-Vorstufen |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3063322D1 (en) | 1983-07-07 |
| ATE3476T1 (de) | 1983-06-15 |
| US4395482A (en) | 1983-07-26 |
| JPS5627140A (en) | 1981-03-16 |
| JPH0146862B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-11 |
| EP0023662A1 (de) | 1981-02-11 |
| US4339521A (en) | 1982-07-13 |
| EP0023662B1 (de) | 1983-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0023662B1 (de) | Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen | |
| EP0291779B1 (de) | Wärmebeständige Positivresists und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen | |
| EP0000702B1 (de) | Verfahren zur Herstellung einer fliessbeständigen Resistmaske aus strahlungsempfindlichem Resistmaterial | |
| EP0512339B1 (de) | Hochwärmebeständige Positivresists und Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen | |
| DE69126586T2 (de) | Verfahren zur Herstellung einer Vorrichtung | |
| DE3716629C2 (de) | Wärmebeständige positiv arbeitende strahlungsempfindliche Gemische und Verfahren zur Herstellung wärmebeständiger Reliefstrukturen | |
| CH619055A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3515210C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE3309222A1 (de) | Temperaturbestaendige photoresistzusammensetzung | |
| DE60032943T2 (de) | Imid-benzoxazolpolykondensat sowie verfahren zur herstellung | |
| DE2933827A1 (de) | Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung. | |
| DE3231147A1 (de) | Positiv arbeitendes verfahren zur herstellung von reliefbildern oder resistmustern | |
| DE3837612A1 (de) | Positiv-fotoresists von polyimid-typ | |
| DE60019397T2 (de) | Zusammensetzung für polyimidelektroüberzug und verfahren zur nutzung derselben zur herstellung eines gemusterten polyimidfilms | |
| EP0157930B1 (de) | Verfahren zur Herstellung von Polyimid- und Polyisoindolochinazolindion-Reliefstrukturen | |
| DE69023874T2 (de) | Allgemeine Ätz-Stoppschichten aus Salzen von polyamischer Säure für reaktives ionisches Ätzen. | |
| EP0101752B1 (de) | Umkehrprozess zum Herstellen von Chrommasken | |
| EP0157932B1 (de) | Verfahren zur Herstellung von Polyimidazol- und Polyimidazopyrrolon-Reliefstrukturen | |
| EP0041678B1 (de) | Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen und deren Verwendung | |
| EP0026821B1 (de) | Verfahren zur Herstellung hochwärmebeständiger Reliefstrukturen, danach hergestellte Reliefstrukturen und deren Verwendung | |
| DE3722749C2 (de) | Verfahren zur Herstellung einer gedruckten Leiterplatte | |
| DE2933871A1 (de) | Verfahren zur herstellung hochwaermebestaendiger reliefstrukturen und deren verwendung. | |
| EP0391200B1 (de) | Herstellung hochwärmebeständiger Reliefstrukturen | |
| EP0111799B1 (de) | Verfahren zur Entwicklung von Reliefstrukturen auf der Basis von strahlungsvernetzten Polymervorstufen hochwärmebeständiger Polymere | |
| DE2109108A1 (de) | Verfahren zum AEtzen eines Schichttraegers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |