DE2930424C3 - Schaltung zum Bestimmen, ob eine Spannung einen hohen oder einen niedrigen Pegel hat - Google Patents

Schaltung zum Bestimmen, ob eine Spannung einen hohen oder einen niedrigen Pegel hat

Info

Publication number
DE2930424C3
DE2930424C3 DE2930424A DE2930424A DE2930424C3 DE 2930424 C3 DE2930424 C3 DE 2930424C3 DE 2930424 A DE2930424 A DE 2930424A DE 2930424 A DE2930424 A DE 2930424A DE 2930424 C3 DE2930424 C3 DE 2930424C3
Authority
DE
Germany
Prior art keywords
voltage
mos
fet
circuit
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2930424A
Other languages
German (de)
English (en)
Other versions
DE2930424B2 (de
DE2930424A1 (de
Inventor
Kazuhisa Sagamihara Kanagawa Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE2930424A1 publication Critical patent/DE2930424A1/de
Publication of DE2930424B2 publication Critical patent/DE2930424B2/de
Application granted granted Critical
Publication of DE2930424C3 publication Critical patent/DE2930424C3/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
DE2930424A 1978-07-31 1979-07-26 Schaltung zum Bestimmen, ob eine Spannung einen hohen oder einen niedrigen Pegel hat Expired DE2930424C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9350178A JPS55149871A (en) 1978-07-31 1978-07-31 Line voltage detector

Publications (3)

Publication Number Publication Date
DE2930424A1 DE2930424A1 (de) 1980-02-14
DE2930424B2 DE2930424B2 (de) 1981-03-26
DE2930424C3 true DE2930424C3 (de) 1981-11-19

Family

ID=14084087

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2930424A Expired DE2930424C3 (de) 1978-07-31 1979-07-26 Schaltung zum Bestimmen, ob eine Spannung einen hohen oder einen niedrigen Pegel hat

Country Status (3)

Country Link
US (1) US4321489A (enExample)
JP (1) JPS55149871A (enExample)
DE (1) DE2930424C3 (enExample)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122526A (en) * 1980-03-03 1981-09-26 Fujitsu Ltd Semiconductor integrated circuit
EP0122371B1 (en) * 1980-05-20 1988-08-24 Kabushiki Kaisha Toshiba Semiconductor device
JPS5856286B2 (ja) * 1980-12-25 1983-12-14 富士通株式会社 出力バッファ回路
JPS58151124A (ja) * 1982-03-04 1983-09-08 Ricoh Co Ltd レベル変換回路
JPS58190775A (ja) * 1982-04-30 1983-11-07 Fujitsu Ltd 電源電圧検出回路
DE3375627D1 (en) * 1982-07-06 1988-03-10 Motorola Inc A voltage detecting and translating circuit
US4516225A (en) * 1983-02-18 1985-05-07 Advanced Micro Devices, Inc. MOS Depletion load circuit
US4556804A (en) * 1983-11-17 1985-12-03 Motorola, Inc. Power multiplexer switch and method
JPS60124124A (ja) * 1983-12-08 1985-07-03 Nec Corp 入力回路
JPS60180216A (ja) * 1984-02-28 1985-09-14 Fujitsu Ltd 電圧検知回路
JPS60179998A (ja) * 1984-02-28 1985-09-13 Fujitsu Ltd 電圧検出回路
US4797857A (en) * 1986-04-11 1989-01-10 Texas Instruments Incorporated Array discharge for biased array
JPS62217714A (ja) * 1986-03-19 1987-09-25 Fujitsu Ltd 高電圧検出回路
FR2604555B1 (fr) * 1986-09-30 1988-11-10 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement
JP2566931B2 (ja) * 1986-11-17 1996-12-25 日本電気株式会社 レベル比較器
FR2613491B1 (fr) * 1987-04-03 1989-07-21 Thomson Csf Dispositif de detection du niveau haut d'une tension en technologie mos
JPH0740050B2 (ja) * 1987-05-20 1995-05-01 松下電器産業株式会社 電圧検知回路
US5046052A (en) * 1988-06-01 1991-09-03 Sony Corporation Internal low voltage transformation circuit of static random access memory
JP2958992B2 (ja) * 1989-10-31 1999-10-06 日本電気株式会社 半導体集積回路
US5075572A (en) * 1990-05-18 1991-12-24 Texas Instruments Incorporated Detector and integrated circuit device including charge pump circuits for high load conditions
JPH05151773A (ja) * 1991-11-29 1993-06-18 Mitsubishi Electric Corp ダイナミツク型半導体記憶装置
JP3217498B2 (ja) * 1992-10-29 2001-10-09 富士通株式会社 半導体集積回路装置
JP3305827B2 (ja) * 1993-09-07 2002-07-24 株式会社東芝 半導体集積回路
US5420798A (en) * 1993-09-30 1995-05-30 Macronix International Co., Ltd. Supply voltage detection circuit
WO1995009483A1 (en) * 1993-09-30 1995-04-06 Macronix International Co., Ltd. Improved supply voltage detection circuit
US5397946A (en) * 1993-10-26 1995-03-14 Texas Instruments Incorporated High-voltage sensor for integrated circuits
US5723990A (en) * 1995-06-21 1998-03-03 Micron Quantum Devices, Inc. Integrated circuit having high voltage detection circuit
US5793775A (en) * 1996-01-26 1998-08-11 Micron Quantum Devices, Inc. Low voltage test mode operation enable scheme with hardware safeguard
JP3935266B2 (ja) * 1998-05-08 2007-06-20 松下電器産業株式会社 電圧検知回路
JP3457209B2 (ja) * 1999-03-23 2003-10-14 富士通株式会社 電圧検出回路
JP2004228317A (ja) * 2003-01-22 2004-08-12 Seiko Instruments Inc 半導体記憶装置
US7786769B2 (en) * 2006-11-01 2010-08-31 Intel Corporation On die signal detector without die power
US8154320B1 (en) * 2009-03-24 2012-04-10 Lockheed Martin Corporation Voltage level shifter
US8138529B2 (en) 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
JP5723628B2 (ja) * 2011-02-18 2015-05-27 ルネサスエレクトロニクス株式会社 電圧検出回路
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
US8803246B2 (en) * 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
WO2015006111A1 (en) 2013-07-09 2015-01-15 Transphorm Inc. Multilevel inverters and their components
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
JP6637065B2 (ja) 2015-03-13 2020-01-29 トランスフォーム インコーポレーテッド 高電力回路のためのスイッチングデバイスの並列化
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113389C (enExample) * 1960-04-14
US3789246A (en) * 1972-02-14 1974-01-29 Rca Corp Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
JPS5174233A (ja) * 1974-12-24 1976-06-28 Seiko Instr & Electronics Denchijumyokenshutsukairo
US4013902A (en) * 1975-08-06 1977-03-22 Honeywell Inc. Initial reset signal generator and low voltage detector
US4048524A (en) * 1976-04-21 1977-09-13 National Semiconductor Corporation MOS voltage level detecting and indicating apparatus
US4140930A (en) * 1976-07-30 1979-02-20 Sharp Kabushiki Kaisha Voltage detection circuit composed of at least two MOS transistors
US4224539A (en) * 1978-09-05 1980-09-23 Motorola, Inc. FET Voltage level detecting circuit

Also Published As

Publication number Publication date
US4321489A (en) 1982-03-23
JPS55149871A (en) 1980-11-21
DE2930424B2 (de) 1981-03-26
JPH0137699B2 (enExample) 1989-08-09
DE2930424A1 (de) 1980-02-14

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
C3 Grant after two publication steps (3rd publication)
8328 Change in the person/name/address of the agent

Free format text: REINLAENDER, C., DIPL.-ING. DR.-ING., PAT.-ANW., 8000 MUENCHEN