DE2915883C2 - Verfahren zum Anbringen einer epitaktischen Schicht - Google Patents

Verfahren zum Anbringen einer epitaktischen Schicht

Info

Publication number
DE2915883C2
DE2915883C2 DE2915883A DE2915883A DE2915883C2 DE 2915883 C2 DE2915883 C2 DE 2915883C2 DE 2915883 A DE2915883 A DE 2915883A DE 2915883 A DE2915883 A DE 2915883A DE 2915883 C2 DE2915883 C2 DE 2915883C2
Authority
DE
Germany
Prior art keywords
substrate
epitaxial layer
layer
support
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2915883A
Other languages
German (de)
English (en)
Other versions
DE2915883A1 (de
Inventor
Paulus Zacharias A. M. van der Nijmegen Putte
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2915883A1 publication Critical patent/DE2915883A1/de
Application granted granted Critical
Publication of DE2915883C2 publication Critical patent/DE2915883C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
DE2915883A 1978-04-21 1979-04-19 Verfahren zum Anbringen einer epitaktischen Schicht Expired DE2915883C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7804268,A NL187414C (nl) 1978-04-21 1978-04-21 Werkwijze voor het aanbrengen van een epitaxiale laag.

Publications (2)

Publication Number Publication Date
DE2915883A1 DE2915883A1 (de) 1979-10-31
DE2915883C2 true DE2915883C2 (de) 1987-01-22

Family

ID=19830695

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2915883A Expired DE2915883C2 (de) 1978-04-21 1979-04-19 Verfahren zum Anbringen einer epitaktischen Schicht

Country Status (8)

Country Link
JP (1) JPS54141560A (sv)
AU (1) AU523988B2 (sv)
CA (1) CA1134059A (sv)
DE (1) DE2915883C2 (sv)
FR (1) FR2423865A1 (sv)
GB (1) GB2019644B (sv)
IT (1) IT1112317B (sv)
NL (1) NL187414C (sv)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0671770B1 (en) * 1993-02-09 2000-08-02 GENERAL SEMICONDUCTOR, Inc. Multilayer epitaxy for a silicon diode
JP6477210B2 (ja) * 2015-04-30 2019-03-06 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6358472B2 (ja) * 2015-06-08 2018-07-18 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP6447960B2 (ja) * 2016-04-01 2019-01-09 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL288409A (sv) * 1962-02-02
DE2547692C3 (de) * 1975-10-24 1979-10-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung

Also Published As

Publication number Publication date
JPS5538819B2 (sv) 1980-10-07
AU523988B2 (en) 1982-08-26
IT7921949A0 (it) 1979-04-18
DE2915883A1 (de) 1979-10-31
NL187414C (nl) 1991-09-16
JPS54141560A (en) 1979-11-02
AU4604679A (en) 1979-10-25
GB2019644A (en) 1979-10-31
IT1112317B (it) 1986-01-13
GB2019644B (en) 1982-09-29
NL187414B (nl) 1991-04-16
CA1134059A (en) 1982-10-19
FR2423865B1 (sv) 1984-07-27
NL7804268A (nl) 1979-10-23
FR2423865A1 (fr) 1979-11-16

Similar Documents

Publication Publication Date Title
DE10136682B4 (de) Selektives Epitaxieverfahren für Halbleiterbauelemente
DE2462644C2 (de) Verfahren zur Herstellung eines Transistors
DE2823967C2 (sv)
DE1947300A1 (de) Verfahren zur Herstellung von Kapazitaetsdioden durch selektive Diffusion im UEbergangsgebiet
DE2517690B2 (de) Verfahren zum Herstellen eines Halbleiterbauelements
DE2642770A1 (de) Herstellung von halbleiteranordnungen
DE2557079A1 (de) Verfahren zum herstellen einer maskierungsschicht
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE2419142C3 (de) Verfahren zur Ausbildung einer Halbleiterschicht mit einer niedrigen Störstellendichte auf einem Halbleitersubstrat mit einer hohen Störstellendichte
DE1514807B2 (de) Verfahren zum herstellen einer planaren halbleiteranordnung
DE1489258B1 (de) Verfahren zum Herstellen einer duennen leitenden Zone unter der Oberflaeche eines Siliciumkoerpers
DE2641024A1 (de) Verfahren zur herabsetzung der fehlstellendichte einer integrierten schaltung
DE1544273A1 (de) Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
DE2211709C3 (de) Verfahren zum Dotieren von Halbleitermaterial
DE1931417C3 (de) Verfahren zur Doppeldiffusion von Halbleitermaterial
DE2915883C2 (de) Verfahren zum Anbringen einer epitaktischen Schicht
EP0008642B1 (de) Verfahren zum Dotieren von Siliciumkörpern mit Bor
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE2950827C2 (de) Verfahren zum epitaktischen Abscheiden von einkristallinem Material
DE2554399C3 (de) Verfahren zum Herstellen von aus Silicium oder Siliciumcarbid bestehenden, direkt-beheizbaren Rohren
DE2316520A1 (de) Verfahren zum dotieren von halbleiterplaettchen durch diffusion aus einer auf das halbleitermaterial aufgebrachten schicht
DE3131875A1 (de) "verfahren zum herstellen einer halbleiterstruktur und halbleiterstruktur"
DE69023582T2 (de) Verfahren zur Herstellung eines Halbleiterelementes mittels Ionen-Implantation.
DE1953254A1 (de) Verfahren zur Herstellung von mindestens einer Leistungshalbleitervorrichtung
DE1544323A1 (de) Verfahren zur Erzeugung von p-Diffusionen in Germanium und zur Herstellung doppelt diffundierter planarer Germaniumtransistoren

Legal Events

Date Code Title Description
8126 Change of the secondary classification

Free format text: C30B 29/06 C30B 31/08

8110 Request for examination paragraph 44
8128 New person/name/address of the agent

Representative=s name: NEHMZOW-DAVID, F., PAT.-ASS., 2000 HAMBURG

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee